IXYS 3012 Search Results

N3012ZC

Abstract: n3012zc260 N3012ZC200 N900CH N900CH20-26 N3012ZC200-260 tp 4056 datasheet tp 4056 westcode n3012 N3012ZC2
Contextual Info: WESTCODE Date:- 15 Aug, 2002 Data Sheet Issue:- 1 An IXYS Company Phase Control Thyristor Types N3012ZC200 to N3012ZC260 Old Type No.: N900CH20-26 Absolute Maximum Ratings VOLTAGE RATINGS MAXIMUM LIMITS UNITS VDRM Repetitive peak off-state voltage, note 1

Contextual Info: WESTCODE An IXYS Company Date:- 15 Aug, 2002 Data Sheet Issue:- 1 Phase Control Thyristor Types N3012ZC200 to N3012ZC260 Old Type No.: N900CH20-26 Absolute Maximum Ratings VOLTAGE RATINGS MAXIMUM LIMITS UNITS VDRM Repetitive peak off-state voltage, note 1

IXYS DSEI 2X121-02a

Abstract: ixys dsei 2x30-12b DSEI IXYS 2x31-12B ixys dsei 1x31-06c IXYS DSEI 2 DSEI 120-06A 1x31-06c dsei 2x60 IXYS DSEI 2X61-12B DSEI IXYS 2x31
Contextual Info: IXYS _ FRED Contents K Package style/Bauform Type Page ns 1b TO-252AA 1 TO-220 AC 1a TO-263AA 35 35 35 k \ 1a 2 TO-247 AD 2a TO-247 AD 2b ISOPLUS 247 3 SOT-227 B, miniBLOC new DSEI6-06AS DSEI 8-06A DSEI 8-06AS D1-2 D1-4 D1-4 35 50 50 40

diode b3

Abstract: MII 75-12 A3 resistor catalog 30-12A6 grease diode 12A3 B3-12 75-12A3 200-12A4 10-06A6
Contextual Info: IGBT Modules B3 1999 IXYS All rights reserved B3 - 1 IGBT Modules Contents Package style VCES IC VCE sat Type Page TC = 25° C TC = 25° C max. V A V 1200 35 3.0 MWI 35-12A5 B3- 4 50 3.0 MWI 50-12A5 B3- 8 75 3.0 MWI 75-12A5 B3-12 75 3.0 MII 75-12A3 MID 75-12A3

Dsei 2x101-12A

Abstract: ixys dsei 1x31-06c ixys dsei 2x31-06c IXYS DSEI 2X121-02a ixys dsei 2x30-06c DSEI IXYS 2x31-12B 2x61-06c 2x121-02a 2x31-12B 2x31-10b
Contextual Info: FRED Contents Package style/Bauform 1b TO-252 AA 1b 1 1a 1 TO-220 AC 1 1a TO-263 AA 1a 2 TO-247 AD 2 2a TO-247 AD 2b ISOPLUS 247 TM 2a/b 2a 2a 3 SOT-227 B, miniBLOC 3 1999 IXYS All rights reserved VRRM IFAV trr V A ns 600 600 600 6 8 8 35 35 35 600 1000

30u60

Abstract: ixys dsei 8-06 ixys dsei STTH 3060 MUR 8120 ixys dsei 12-12 10U60 RHRG 8120 40U60 ixys dsei 60-06
Contextual Info: Cross Reference List EmCon Diodes Product Name Company VRRM [V] Package IF @ [A] 125°C Typ VF [V] 25°C di/dt=-200A/µs VR=200V Typ Typ tRR [ns] Qrr [nC] 25°C 25°C 40 28 40 28 Special features Closest Infineon Equivalent IR IR HFA 04 HFA 04 TB60S TB60 600

Contextual Info: □IXYS MUBW 30-12 A6 Converter - Brake - Inverter Module CBI1 Rectifier Brake Inverter V RRM = 1600V *FAVM - 25 A U = 370 A VCES = 1200 V V CES = 1200 V 'C25 =18 A VCE(Sat,= 2.6 V 'C25 = 31 A V CE,Sat,= 2.2 V Features Input Rectifier Bridge D8 - D13 Symbol

MUBW30-12E6K

Abstract: 9V bridge rectifier ic IXYS IGBT MUBW E72873
Contextual Info: MUBW30-12E6K Converter - Brake - Inverter Module CBI 1 SPT IGBT Three Phase Rectifier Brake Chopper Three Phase Inverter VRRM = 1600 V VCES = 1200 V VCES = 1200 V IDAVM25 = 130 A IC25 IFSM = 19 A IC25 = 29 A = 300 A VCE(sat) = 2.9 V VCE(sat) = 2.9 V Part name (Marking on product)

50no3

Abstract: ixys vuo 52 input id VUO 190-08NO7 VVZ24 100-16no 70no7 8614n vvz 175 fast recovery epitaxial diode FRED module bridge INVERTER 500 W SMPS
Contextual Info: 3~ Rectifier Bridges Contents A 1 2 3 4 5 6 Page VUO 16-.NO1 VUO 22-.NO1 VUO 25-.NO8 VUO 28-.NO8 VUO 36-.NO8 VUO 35-.NO7 VUO 34-.NO1 VUO 30-.NO3 VUO 52-.NO1 VUO 50-.NO3 VUO 55-.NO7 VUO 62-.NO7 VUO 68-.NO7 VUO 70-.NO7 VUO 60-.NO3 VUO 80-.NO1

MUBW30-12E6K

Abstract: 12e6k E72873 30-12E6K
Contextual Info: MUBW30-12E6K Converter - Brake - Inverter Module CBI 1 SPT IGBT Three Phase Rectifier Brake Chopper Three Phase Inverter VRRM = 1600 V VCES = 1200 V VCES = 1200 V IDAVM25 = 130 A IC25 IFSM = 19 A IC25 = 29 A = 300 A VCE(sat) = 2.9 V VCE(sat) = 2.9 V Part name (Marking on product)

IXYS DSEI 2X121

Abstract: IXYS DSEI 2X121-02a 2x121-02a IXYS DSEI 2X61 DO-205 2X61-10B 110-12F dsei 2x60 110-16F 6206 sot 89
Contextual Info: DS 75 DSA 75 Rectifier Diodes Avalanche Diodes VRSM V BR min ① VRRM DSI 75 DSAI 75 VRRM = 800 - 1800 V IF(RMS) = 160 A I F(AV)M = 110 A DO-203 AB Anode Cathode on stud on stud C A V V V 900 1300 - 800 1200 DS 75-08B DS 75-12B DSI 75-08B DSI 75-12B 1300 1700

3 phase Rectifier Phase Control IC

Abstract: D-68623 3,3 kw MHz transistor module power circuit of three phase control rectifier RECTIFIER DIODES ON Semiconductor ixys 3012
Contextual Info: VUI 30-12 N1 Advanced Technical Information Rectifier Module for Three Phase Power Factor Correction Typical Rectified Mains Power Pn = 15 kW at Vn = 400 V 3~; fT = 15 kHz; TC = 80°C Features Symbol Conditions VCES TVJ = 25°C to 150°C Maximum Ratings VGES

40N120

Abstract: 40N120 DATASHEET D-68623 IXRH40N120
Contextual Info: IXRH 40N120 VCES = ±1200 V IC25 = 55 A VCE sat = 2.3 V typ. IGBT with Reverse Blocking capability C TO-247 AD G C E G E G = Gate, E = Emitter, C (TAB) C = Collector, TAB = Collector Features IGBT Conditions VCES TVJ = 25°C to 150°C Maximum Ratings VGES

Contextual Info: IXRH 40N120 VCES = ±1200 V IC25 = 55 A VCE sat = 2.3 V typ. IGBT with Reverse Blocking capability C TO-247 AD G C E G E G = Gate, E = Emitter, C (TAB) C = Collector, TAB = Collector Features IGBT Conditions VCES TVJ = 25°C to 150°C Maximum Ratings VGES

30-12E6K

Abstract: E72873
Contextual Info: MWI 30-12E6K IGBT Module Sixpack IC25 = 29 A = 1200 V VCES VCE sat typ. = 2.5 V Short Circuit SOA Capability Square RBSOA Preliminary data Part name (Marking on product) MWI 30-12E6K 14 18 22 13 17 21 t 10, 23 u 8 11, 12 15, 16 19, 20 7 4 5 3 Pin configuration see outlines.

12e6k

Abstract: 30-12E6K E72873
Contextual Info: MWI 30-12E6K IGBT Module Sixpack IC25 = 29 A VCES = 1200 V VCE sat typ. = 2.5 V Short Circuit SOA Capability Square RBSOA Preliminary data Part name (Marking on product) MWI 30-12E6K 10, 23 14 18 22 13 17 21 8 11, 12 15, 16 19, 20 NTC E72873 Pin configuration see outlines.

full bridge igbt induction heating generator

Abstract: transistor x112 WESTCODE catalog 100-12E8 2-IAO-QMC-01001 IGBT ac switch in SSR IGBT D-Series IGCT 4.5kv ixys vuo 52 input id MITA15WB1200TMH
Contextual Info: P R O D U C T S E L E C T O R G U I D E IGBT & Rectifier Modules M A Y 2 0 0 7 Selector Guide incl.: Product Overview Tables Application Overview Technology Overview MiniPack 2 NEW Press-Pack IGBTs POWER DEVICES Power MOSFET Discreets RF Power MOSFETs IGBT Discreets

VVY 40-16IO1

Abstract: B2HKF ixys vhf 28-08io5 vgo 36-08io7 vvy40 ixys vuo 52 input id VKO 15-08io5 VUM 33-05 F1-10 F1-20
Contextual Info: 1~ Rectifier Bridges & PFC Modules Contents 1 2 1 3 5 18 21 21 30 31 35 38 40 45 50 52 54 55 65 68 72 107 124 122 174 2000 1600 20 ● ● ● ● ● ● ● ● ● ● ● ● ● ● ● ● ● ● ● ● 1400 06 08 12 14 16 18 ● ● ● ● ● ●

1200 va ups circuit diagram

Abstract: 30-06BR DSEC16-06A dse*60-06A y 803A DSEP 15-06A dsep 12-12a dsep 2x91-03a 30-04A 6006B
Contextual Info: HiPer Fast Recovery Epitaxial Diodes Reg. Nr. 2743-02 HiPerFREDTM Contents Package style Type Voltage Current 1 TO-220 AC 2 TO-247 AD 2a ISOPLUS 247 TM 3 TO-268 AA 4 TO-220 AB 5 TO-247 AD 5a ISOPLUS 247 TM 6 SOT-227 B, miniBLOC Circuit Diagram Page VRRM IFAV

SCR 2146

Abstract: 72-12io8 cs 45-12IO1 scr 2032 IGD 001 tg-500 IXYS SCR Gate Drive CS 45-16io1R 300-12io3 CS thyristor cs 3-06
Contextual Info: Discrete Thyristors Contents 2 1 Type Page 1800 1600 1400 A VRRM/VDRM V 1200 IT(AV)M 800 Package style 1 16 ● ● CS 8-.io2 E1-2 2 3 19 19 ● ● ● ● CS 19-.ho1 CS 19-.ho1S E1-4 4 19 CS 20-.io1 E1-7 1 32 ● CS 23 E1-10 4 31 ● ● ● CS 30

Contextual Info: FII 30-12E NPT3 IGBT IC25 = 33 A = 1200 V VCES VCE sat typ. = 2.4 V Phaseleg Topology in ISOPLUS i4-PACTM 3 5 4 1 1 5 2 Features Symbol Conditions VCES TVJ = 25°C to 150°C Maximum Ratings VGES IC25 IC90 TC = 25°C TC = 90°C ICM VCEK VGE = ±15 V; RG = 68 Ω; TVJ = 125°C

IXYS DSA 1-16D

Abstract: DIODE DSA 1-16D DO-205ACDO-30 pwm INVERTER welder diode avalanche DSA VRRM 2300 1718a 110-12F IXYS DSA DSI 35-08A 117 L DS35Q
Contextual Info: Discrete Rectifier and Avalanche Diodes Contents 1 2 3 Type Page 1800 1600 1400 A VRRM/VDRM V 800 IF(AV)M 1200 Package style 1 2.3 ● ● DS 1 ● ● DSA 1 D5 - 2 2 3.6 ● ● ● DS 2 ● ● DSA 2 D5 - 3 3 2x11 4 ● ● ● ● 5 ● ● ● DS 9 ● ● DSA 9

diode 0549

Abstract: FII30-12E induction heat resonant
Contextual Info: FII 30-12E NPT3 IGBT IC25 = 33 A = 1200 V VCES VCE sat typ = 2.4 V Phaseleg Topology in ISOPLUS i4-PACTM 3 5 4 1 1 5 2 Features Symbol Conditions VCES TVJ = 25°C to 150°C Maximum Ratings VGES IC25 IC90 TC = 25°C TC = 90°C ICM VCEK VGE = ±15 V; RG = 68 Ω; TVJ = 125°C

Contextual Info: FII 30-12E NPT3 IGBT IC25 = 29 A = 1200 V VCES VCE sat typ. = 2.4 V Phaseleg Topology in ISOPLUS i4-PACTM 3 5 4 1 1 5 2 Features Symbol Conditions VCES TVJ = 25°C to 150°C Maximum Ratings VGES IC25 IC90 TC = 25°C TC = 90°C ICM VCEK VGE = ±15 V; RG = 68 Ω; TVJ = 125°C