3508A Search Results

QFP JEDEC tray

Abstract: MAX. 50 Tray
Contextual Info: Packing NEC Tray Name LA-3508A-1 Mounting Pad JEDEC Tray OT-001T-01 208 pin QFP 28 x 28 Terminal Spacing Linear = 0.5 A B 156 157 105 104 detail of lead end S C D Q 208 1 R 53 52 F G H I J M P K N S S L M NOTE 1. Controlling dimension millimeter. 2. Each lead centerline is located within 0.12 mm (0.005 inch) of

P120GD-80-LBB

Contextual Info: Packing NEC Tray JEDEC Tray Name LA-3508A-1 MQFP 28x28 3.2mm OT-001T-01 Mounting Pad 120 pin QFP 28 × 28 Terminal Spacing Linear = 0.8 A B 90 61 91 60 F 120 1 R Q S D C detail of lead end 31 30 J G H I M M P K N ITEM NOTE Each lead centerline is located within 0.15 mm (0.006 inch) of

P160GD-65-LBD

Contextual Info: Packing NEC Tray Name LA-3508A-1 Mounting Pad JEDEC Tray OT-001T-01 160 pin QFP 28 x 28 Terminal Spacing Linear = 0.65 A 81 80 160 1 41 40 F C 120 121 D B G H I M detail of lead end J N 5°±5° M Q P S K L P160GD-65-LBD, MBD NOTE Each lead centerline is located within 0.13 mm

3773

Contextual Info: UNIT : mm 335±1.0 59.5±0.5 216±0.5 24±0.5 27±0.5 54±0.1 A 37.73 126±0.5 180±1.0 42±0.1 PPE 22±0.5 135°C MAX. A' NEC LA-3508A-1 37.73 SECTION A-A' 37.73 5.4 5.8 8.8 27.4 Applied Package Quantity pcs 120-pin • Plastic QFP (3.2mm thick) 160-pin · Plastic QFP (3.2mm thick)

Contextual Info: Mounting Pad Packing NEC Tray JEDEC Tray Name LA-3508A-1 MQFP 28x28 3.2mm 256 pin QFP 28 × 28 Terminal Spacing Linear = 0.4 A B 192 193 129 128 F Q R D C S detail of lead end 256 1 65 64 G H I M J M P K N L NOTE Each lead centerline is located within 0.09 mm (0.004 inch) of

Contextual Info: Mounting Pad Packing NEC Tray Name LA-3508A-1 JEDEC Tray OT-001T-01 160 pin QFP 28 x 28 Terminal Spacing Linear = 0.65 A B 120 121 81 80 detail of lead end C S D R Q 41 40 160 1 F G P H I M J K M N NOTE ITEM Each lead centerline is located within 0.13 mm (0.005 inch) of

CH746

Abstract: CH746A CH747 CH747A CH748 CH748A LL746A LL747A 1N 6252
Contextual Info: Zener Regulator Diodes P a rt N u m b e r M ic r o s e m i D iv is io n i Package O u tlin e Type M il Spec M/crosem/ D a ta Pow er Vz Izt Zzt Zzk S h e e t ID W (V) (m A ) (a ) < £ !) IR (u A ) VR (V) I 1 T 0 ‘(+ /.% ) i 1N 746A (D 0 7 ) Scottsdale

UL3266 AWG20

Abstract: FL86ST125-3508A FL86ST125-3508AG3 AWG20 UL3266
Contextual Info: 4-M6 Dimension: VO 10 n-> 1 -H 'S- tS lJ o> 25 +1 o> r \ £ NI 33 45 73. 55 ±0. 2 90 126.5 ¿¿ZZ. 1.Bipolar parallel connection ORG A + » i 1 ORG/WHT J BLK/WHT 2 BLK A - J . Insulation Resistance:lOOMohms Min.,500VDC Dielectric Strength:500VAC for 1 minute

35-16A

Abstract: 3508a 3516A 35-12a DO-203 dsai do-203 weight DSI35 DSAI 35-16A DSAI 35-12A
Contextual Info: Rectifier Diodes Avalanche Diodes DS 35 DSI 35 IFRMS = 80 A DSA 35 DSAI 35 IFAVM = 52 A VRRM = 800 - 1800 V VRSM VBRmin ① VRRM Anode Cathode on stud on stud V V V 900 1300 - 800 1200 DS 35-08A DS 35-12A DSI 35-08A DSI 35-12A 1300 1700 1900 1300 1750 1950

7n60b

Abstract: 35N120u1 ixys dsei 45-12a DSDI 35-12A 20N80 80n06 80n60 VVY 40-16IO1 IXYS CS 2-12 IXFX 44N80
Contextual Info: Alphanumerical Index A AXC-051 AXC-053 AXC-101 AXC-102 AXL-001 AXL-051 AXV-102 C CS 142-12io8 CS 142-16io8 CS 19-08ho1 CS 19-08ho1S CS 19-12ho1 CS 19-12ho1S CS 20-12io1 CS 20-14io1 CS 20-16io1 CS 23-08io2 CS 23-12io2 CS 23-16io2 CS 300-12io3 CS 300-16io3 CS 300-18io3

IXYS DSA 1-16D

Abstract: DIODE DSA 1-16D DO-205ACDO-30 pwm INVERTER welder diode avalanche DSA VRRM 2300 1718a 110-12F IXYS DSA DSI 35-08A 117 L DS35Q
Contextual Info: Discrete Rectifier and Avalanche Diodes Contents 1 2 3 Type Page 1800 1600 1400 A VRRM/VDRM V 800 IF(AV)M 1200 Package style 1 2.3 ● ● DS 1 ● ● DSA 1 D5 - 2 2 3.6 ● ● ● DS 2 ● ● DSA 2 D5 - 3 3 2x11 4 ● ● ● ● 5 ● ● ● DS 9 ● ● DSA 9

35-16A

Contextual Info: DS 35 DSA 35 DIXYS Rectifier Diodes Avalanche Diodes DSI 35 DSAI35 vRRRM RM = 800 -1800 v iF RMS = 80 a I' f (AV)M = 49 A V RSM V 900 1300 1300 1700 1900 ^ (B R)m in V V RRM •X Anode V I ^ on stud •J- on stud - 800 1200 DS35-08A DS35-12A DSI 35-08A

7N60B equivalent

Abstract: 18N50 equivalent ixgh 1499 MOSFET smd 4407 IXDD 614 C 547 B W57 BJT transistor r1275ns20l R1271ns12C IXYS CS 20-22 MOF1 IXTP 220N04T2
Contextual Info: Contents Page General Contents QA and Environmental Management Systems Alphanumeric Index Symbols and Terms Nomenclature Patents and Intellectual Property I II III XVIII XX XXII CLARE Optically Isolated Solid State Relays Optically Isolated AC-Power Switches

DSI35-12A

Abstract: DSI35 DSA35-12A diode T 3512 35-16A 3516A 3508a diode avalanche DSA
Contextual Info: 35 35 • X .2 Rectifier Diode Avalanche Diode ' RRM F RMS F(AV)M v RSM V(BR)m in VR R M •X. Anode ^ ^ on stud ■j" on stud V 900 1300 - 800 1200 DS 35-08A DS 35-12 A DSI35-08A DSI35-12A 1300 1700 1900 1300 1750 1950 1200 1600 1800 DSA35-12A OSA 35-16A

DIN 46237

Abstract: 3612AW vogt m4 vogt m3 DIN-46237 vogt m6 vogt m8 vogt 3693A 3652AW
Contextual Info: Vogt AG CH-4654 Lostorf Switzerland Postfach 148 Telefon 062 / 285 75 75 Vogt Verbindungstechnik Telefax 062 / 285 74 74 Lötfreie Kabelschuhe ohne Isolation Cosses à sertir sans isolation Uninsulated solderless terminals DIN 46234, ausgenommen* DIN 46234, *excepté

35-16A

Abstract: 35-12a 3508a diode avalanche DSA IXYS DSA 3516A
Contextual Info: DS 35 DSA 35 VRRM = 800-1800 V IF RMS = 80 A IF(AV)M = 49 A Rectifier Diode Avalanche Diode VRSM V(BR)minÿ① VRRM Anode Cathode on stud on stud V V V 900 1300 - 800 1200 DS 35-08A DS 35-12A DSI 35-08A DSI 35-12A 1300 1700 1900 1300 1750 1950 1200 1600 1800

Contextual Info: DS 35 DSA 35 Rectifier Diodes Avalanche Diodes V RSM V BR min ① V RRM DSI 35 DSAI 35 VRRM = 800 - 1800 V IF(RMS) = 80 A I F(AV)M = 49 A Anode DO-203 AB Cathode V V V on stud C 900 1300 - 800 1200 DS 35-08A DS 35-12A DSI 35-08A DSI 35-12A A 1300 1700 1900