IXTN 85 N 20 Search Results

Contextual Info: PIX Y S 1 vDSS High Current Power MOSFET IXTN 58N50 IXTN 61N50 500 V 500 V □ ^D25 DS on 58 A 85 mQ 61 A 75 m ß N-Channel Enhancement Mode Preliminary Data Symbol Test Conditions Maximum Ratings v* DSS T0 = 25°Cto150°C 500 V v DCR Tj = 25°C to 150°C; RGS= 1.0 MQ

TEST20

Contextual Info: □ IXYS vDSS High Current Power MOSFET IXTN 58N50 IXTN 61N50 500 V 500 V p ^D25 DS on 58 A 85 m fì 61 A 75 m fì N-Channel Enhancement Mode Preliminary Data os Symbol TestC onditions v DSS Tj = 2 5 °C to 150°C vDGR T, = 25°C to 150°C; £ s= 1.0 M il

pixy

Contextual Info: PiXYS a«i»«iawawiWBt»i High Current Power MOSFET . - V DSS IXTN 58N50 IXTN 61N50 500 V 500 V lg! F js n g g ìg R ^D25 DS on 58 A 85 mQ 61 A 75 m il N-Channel Enhancement Mode Symbol Test Conditions Voss v D0B Tj = 25°C to 150°C 500 V Tj = 25°C to 150°C; Rss= 1.0 M£2

ixys ixtn 79n20

Abstract: 79N20 IXTN79N20 ixtn 79n20
Contextual Info: MegaMOSTMFET IXTN 79N20 VDSS = 200 V = 85 A Ω = 25 mΩ ID25 RDS on N-Channel Enhancement Mode KS Symbol Test Conditions Maximum Ratings VDSS T J = 25°C to 150°C 200 V VDGR T J = 25°C to 150°C; RGS = 10 kΩ 200 V VGS Continuous ±20 V VGSM Transient

ixys ixtn 79n20

Abstract: IXTN max4458 IXTN79N20
Contextual Info: nixYS MegaMOS FET IXTN 79N20 VDSS = 200 V U = 85 A ^D S on = ^ N-Channel Enhancement Mode Symbol Test Conditions Maximum Ratings v DSS T j =25°C to150°C 200 V v ™ ^ 200 V = 25° C to 150° C i R ^ I O k i l miniBLOC, SOT-227 B 53432 Vos vGSM Continuous

Contextual Info: MegaMOS FET IXTN79N20 V DSS = 200 V ^ D 2 5 _ D _ DS on ” 85 A 25 mQ N-Channel Enhancement Mode OD G 1 KS r ¿ s Maximum Ratings miniBLOC, SOT-227 B 200 V s 200 V Continuous ±20 V Transient ±30 V Symbol Test Conditions VDSS Tj = 25°C to 150°C v DGR

ixtn 44N50

Abstract: IXTN44N50L
Contextual Info: Advance Technical Data Power MOSFETs with Extended FBSOA IXTK 44N50L IXTN 44N50L VDSS ID25 RDS on = 500 = 44 = 0.15 V A Ω N-Channel Enhancement Mode Avalanche Rated TO-264 AA (IXTK) Symbol Test Conditions Maximum Ratings IXTK IXTN VDSS TJ = 25°C to 150°C

46N50L

Abstract: IXTN
Contextual Info: Power MOSFETs with Extended FBSOA IXTN 46N50L N-Channel Enhancement Mode Avalanche Rated VDSS ID25 = 500 = 46 RDS on = 0.16 V A Ω Preliminary Data Sheet Symbol Test Conditions VDSS TJ = 25oC to 150oC 500 V VDGR TJ = 25oC to 150oC; RGS = 1 MΩ 500 V VGS Continuous

62N50L

Abstract: IXTN62N50L
Contextual Info: Power MOSFETs with Extended FBSOA IXTB 62N50L IXTN 62N50L VDSS ID25 RDS on N-Channel Enhancement Mode Avalanche Rated = 500 = 62 ≤ 0.1 V A Ω Preliminary Data Sheet PLUS 264TM (IXTB) Symbol Test Conditions Maximum Ratings IXTB IXTN VDSS TJ = 25oC to 150oC

IXTN79N20

Abstract: ixys ixtn 79n20 sra 2201 79N20 4bob ixtn 79n20
Contextual Info: IXTN79N20 V DSS MegaMOS FET I D25 RDS on N-Channel Enhancement Mode = 200 V = 85 A = 25 m fì OD e 1 KS ^ 1 ÒS Maximum Ratings Symbol Test Conditions V DSS Tj = 25°C to 1 50°C 200 V VDGR Tj = 25°C to 150°C; RGS= 10 kQ 200 V VGS Continuous ±20 V VCSM

EIAJ ED-4701/101

Abstract: function17 tray drawing ic measurement CF5074B DSF060310 HP4194A HP8901B HP85046
Contextual Info: CF5074B-1 Component Specifications VC America Inc. Authorizing Signature Reference No ：CSF060310-010 Issuing Date ：20-Nov-2006 N. Sekiya （ⅰ／ ） The change record CF5074B-1 Product name Component Specifications First edition number CSF060310-010

CF5076

Abstract: WF5076
Contextual Info: 5076 series VCXO Module IC with Built-in Varicap OVERVIEW The 5076 series are miniature VCXO ICs that provide a wide frequency pulling range, even when using miniature crystal units for which a wide pulling range is difficult to provide. They employ a recently developed varicap diode fabrication process that provides a wide frequency pulling range and good linearity without any

Contextual Info: 5076 series VCXO Module IC with Built-in Varicap OVERVIEW The 5076 series are miniature VCXO ICs that provide a wide frequency pulling range, even when using miniature crystal units for which a wide pulling range is difficult to provide. They employ a recently developed varicap diode fabrication process that provides a wide frequency pulling range and good linearity without any

CF5076

Abstract: WF5076
Contextual Info: 5076 series VCXO Module IC with Built-in Varicap OVERVIEW The 5076 series are miniature VCXO ICs that provide a wide frequency pulling range, even when using miniature crystal units for which a wide pulling range is difficult to provide. They employ a recently developed varicap diode fabrication process that provides a wide frequency pulling range and good linearity without any

5075

Abstract: VCXO
Contextual Info: 5075 series VCXO Module IC with Built-in Varicap OVERVIEW The 5075 series are miniature VCXO ICs that provide a wide frequency pulling range, even when using miniature crystal units for which a wide pulling range is difficult to provide. They employ a recently developed varicap diode fabrication process that provides a wide frequency pulling range and good linearity without any

Contextual Info: 5075 series VCXO Module IC with Built-in Varicap OVERVIEW The 5075 series are miniature VCXO ICs that provide a wide frequency pulling range, even when using miniature crystal units for which a wide pulling range is difficult to provide. They employ a recently developed varicap diode fabrication process that provides a wide frequency pulling range and good linearity without any

WF5075

Abstract: 27mhz rf amplifier IC sine wave generator for 100Hz-to-10kHz 5075BM 5075B5
Contextual Info: 5075 series VCXO Module IC with Built-in Varicap OVERVIEW The 5075 series are miniature VCXO ICs that provide a wide frequency pulling range, even when using miniature crystal units for which a wide pulling range is difficult to provide. They employ a recently developed varicap diode fabrication process that provides a wide frequency pulling range and good linearity without any

CF5075

Abstract: 5075BM 8901B WF5075 12mhz crystal C1 C0 5075A 5075B5 23/N-50-7-5
Contextual Info: 5075 series バリキャップ内蔵 VCXO 用 IC •概要 5075 series は幅広い周波数可変範囲の確保が困難な小型の水晶振動子でも広可変を可能にし、これを小さ なチップサイズに集積した小型 VCXO 用 IC です。新開発のバリキャップダイオード搭載プロセスを採用した

Contextual Info: 5077 series VCXO Module ICs with Built-in Varicap OVERVIEW The 5077 series are LV-PECL output VCXO ICs that provide a wide frequency pulling range. They employ bipolar oscillator circuit and recently developed varicap diode fabrication process that provides a low phase noise characteristic and a wide frequency pulling range

5076b

Abstract: WF5076 CF5076 27mhz rf ic max5076
Contextual Info: 5076 series バリキャップ内蔵 VCXO 用 IC •概要 5076 series は幅広い周波数可変範囲の確保が困難な小型の水晶振動子でも広可変を可能にし、これを小さ なチップサイズに集積した小型 VCXO 用 IC です。新開発のバリキャップダイオード搭載プロセスを採用した

Contextual Info: 5077 series VCXO Module ICs with Built-in Varicap OVERVIEW The 5077 series are LV-PECL output VCXO ICs that provide a wide frequency pulling range. They employ bipolar oscillator circuit and recently developed varicap diode fabrication process that provides a low phase noise characteristic and a wide frequency pulling range

7N60B equivalent

Abstract: 18N50 equivalent ixgh 1499 MOSFET smd 4407 IXDD 614 C 547 B W57 BJT transistor r1275ns20l R1271ns12C IXYS CS 20-22 MOF1 IXTP 220N04T2
Contextual Info: Contents Page General Contents QA and Environmental Management Systems Alphanumeric Index Symbols and Terms Nomenclature Patents and Intellectual Property I II III XVIII XX XXII CLARE Optically Isolated Solid State Relays Optically Isolated AC-Power Switches