IT07514 Search Results

3LN03SS

Abstract: is350 marking YG
Contextual Info: 3LN03SS Ordering number : ENN8231 N-Channel Silicon MOSFET 3LN03SS General-Purpose Switching Device Applications Features • • • • Low ON-resistance. High-speed switching. 2.5V drive. High ESD Voltage TYP 300V [Built-in one side diode for protection between Gate-to-Source].

MCH6630

Contextual Info: MCH6630 Ordering number : ENN8240 N-Channel Silicon MOSFET MCH6630 General-Purpose Switching Device Applications Features • • • • • Low ON-resistance. Ultrahigh-speed switching. 1.5V drive. High resistance to damage from ESD TYP 300V . [with a protection diode connected between the gate and source]

MCH6630

Abstract: TYP300V
Contextual Info: MCH6630 注文コード No. N 8 2 4 0 三洋半導体データシート N MCH6630 N チャネル MOS 形シリコン電界効果トランジスタ 汎用スイッチングデバイス 特長 ・低オン抵抗。 ・超高速スイッチング。 ・1.5V 駆動。

MCH6634

Contextual Info: MCH6634 Ordering number : ENN8229 N-Channel and P-Channel Silicon MOSFETs MCH6634 General-Purpose Switching Device Applications Features • • • • The MCH6634 incorporates an N-channel MOSFET and a P-channel MOSFET that feature low ON-resistance and ultrahigh-speed switching, thereby enabling high-density mounting.

MCH3435

Abstract: MCH5834 SS0503SH IT1180
Contextual Info: MCH5834 注文コード No. N A 0 5 5 8 三洋半導体データシート N MCH5834 MOSFET : N チャネル MOS 型シリコン電界効果トランジスタ SBD : ショットキバリアダイオード 汎用スイッチングデバイス 特長 ・N チャネル MOS 型電界効果トランジスタ MCH3435 とショットキバリアダイオード(SS0503SH)を 1 パッケージに

SCH2601

Contextual Info: SCH2601 Ordering number : ENN8329 N-Channel and P-Channel Silicon MOSFETs SCH2601 General-Purpose Switching Device Applications Features • • • • • The SCH2601 incorporates two elements in the same package which are N-channel MOSFETs, thereby enabling

Contextual Info: 3LN03M Ordering number : ENN8153 N-Channel Silicon MOSFET 3LN03M General-Purpose Switching Device Applications Features • • • • Low ON-resistance. High-speed switching. 2.5V drive. High ESD Voltage TYP 300V [Built-in one side diode for protection between Gate-to-Source].

Contextual Info: 3LN03SS Ordering number : ENN8231 N-Channel Silicon MOSFET 3LN03SS General-Purpose Switching Device Applications Features • • • • Low ON-resistance. High-speed switching. 2.5V drive. High ESD Voltage TYP 300V [Built-in one side diode for protection between Gate-to-Source].

MCH3435

Contextual Info: MCH3435 Ordering number : ENN8238 N-Channel Silicon MOSFET MCH3435 General-Purpose Switching Device Applications Features • • • • Low ON-resistance. Ultrahigh-speed switching. 1.5V drive. High ESD voltage TYP 300V [Built-in one side diode for protection between Gate-to-Source].

3LN03S

Abstract: marking YG
Contextual Info: 3LN03S Ordering number : ENA0011 N-Channel Silicon MOSFET 3LN03S General-Purpose Switching Device Applications Features • • • • Low ON-resistance. Ultrahigh-speed switching. 2.5V drive. High ESD Voltage TYP 300V [Built-in one side diode for protection between Gate-to-Source].

MCH6634

Contextual Info: MCH6634 Ordering number : EN8229A SANYO Semiconductors DATA SHEET N-Channel and P-Channel Silicon MOSFETs MCH6634 General-Purpose Switching Device Applications Features • • • • The MCH6634 incorporates an N-channel MOSFET and a P-channel MOSFET that feature low ON-resistance

MCH6634

Abstract: TYP300V
Contextual Info: MCH6634 注文コード No. N 8 2 2 9 A 三洋半導体データシート 半導体ニューズ No.N8229 とさしかえてください。 MCH6634 N チャネルおよび P チャネル MOS 型シリコン電界効果トランジスタ 汎用スイッチングデバイス

SCH2601

Abstract: TYP300V
Contextual Info: SCH2601 注文コード No. N 8 3 2 9 三洋半導体データシート N SCH2601 N チャネルおよび P チャネル MOS 型シリコン電界効果トランジスタ 汎用スイッチングデバイス 特長 ・MOS 型電界効果トランジスタを 1 パッケージに 2 素子内蔵した複合タイプであり高密度実装が可能である。

marking YG

Abstract: 3LN03S
Contextual Info: 3LN03S Ordering number : ENA0011 N-Channel Silicon MOSFET 3LN03S General-Purpose Switching Device Applications Features • • • • Low ON-resistance. Ultrahigh-speed switching. 2.5V drive. High ESD Voltage TYP 300V [Built-in one side diode for protection between Gate-to-Source].

Contextual Info: MCH6634 Ordering number : EN8229A N-Channel and P-Channel Silicon MOSFETs MCH6634 General-Purpose Switching Device Applications Features • • • • The MCH6634 incorporates an N-channel MOSFET and a P-channel MOSFET that feature low ON-resistance and ultrahigh-speed switching, thereby enabling high-density mounting.

diode marking YG

Abstract: CISS 3010 3LN03M marking YG
Contextual Info: 3LN03M Ordering number : ENN8153 N-Channel Silicon MOSFET 3LN03M General-Purpose Switching Device Applications Features • • • • Low ON-resistance. High-speed switching. 2.5V drive. High ESD Voltage TYP 300V [Built-in one side diode for protection between Gate-to-Source].

3LN03SS

Abstract: D2006 TYP300V IT08161 IT07519
Contextual Info: 3LN03SS 注文コード No. N 8 2 3 1 三洋半導体データシート N 3LN03SS N チャネル MOS 形シリコン電界効果トランジスタ 汎用スイッチングデバイス 特長 ・低オン抵抗。 ・高速スイッチング。 ・2.5V 駆動。

MCH3435

Abstract: MCH5834 SS0503SH
Contextual Info: MCH5834 Ordering number : ENA0558 SANYO Semiconductors DATA SHEET MCH5834 MOSFET : N-Channel Silicon MOSFET SBD : Schottky Barrier Diode General-Purpose Switching Device Applications Features • Composite type with an N-channel silicon MOSFET MCH3435 and a schottky barrier diode (SS0503SH)

EC4404C

Contextual Info: EC4404C Ordering number : ENN8122 N-Channel Silicon MOSFET EC4404C General-Purpose Switching Device Applications Features • • • • Low ON-resistance. High-speed switching. 2.5V drive. High resistance to damage from ESD typ 300V [with a protection diode connected between the gate and source].