IT07518 Search Results

3LN03SS

Abstract: is350 marking YG
Contextual Info: 3LN03SS Ordering number : ENN8231 N-Channel Silicon MOSFET 3LN03SS General-Purpose Switching Device Applications Features • • • • Low ON-resistance. High-speed switching. 2.5V drive. High ESD Voltage TYP 300V [Built-in one side diode for protection between Gate-to-Source].

Contextual Info: 3LN03M Ordering number : ENN8153 N-Channel Silicon MOSFET 3LN03M General-Purpose Switching Device Applications Features • • • • Low ON-resistance. High-speed switching. 2.5V drive. High ESD Voltage TYP 300V [Built-in one side diode for protection between Gate-to-Source].

Contextual Info: 3LN03SS Ordering number : ENN8231 N-Channel Silicon MOSFET 3LN03SS General-Purpose Switching Device Applications Features • • • • Low ON-resistance. High-speed switching. 2.5V drive. High ESD Voltage TYP 300V [Built-in one side diode for protection between Gate-to-Source].

3LN03S

Abstract: marking YG
Contextual Info: 3LN03S Ordering number : ENA0011 N-Channel Silicon MOSFET 3LN03S General-Purpose Switching Device Applications Features • • • • Low ON-resistance. Ultrahigh-speed switching. 2.5V drive. High ESD Voltage TYP 300V [Built-in one side diode for protection between Gate-to-Source].

marking YG

Abstract: 3LN03S
Contextual Info: 3LN03S Ordering number : ENA0011 N-Channel Silicon MOSFET 3LN03S General-Purpose Switching Device Applications Features • • • • Low ON-resistance. Ultrahigh-speed switching. 2.5V drive. High ESD Voltage TYP 300V [Built-in one side diode for protection between Gate-to-Source].

diode marking YG

Abstract: CISS 3010 3LN03M marking YG
Contextual Info: 3LN03M Ordering number : ENN8153 N-Channel Silicon MOSFET 3LN03M General-Purpose Switching Device Applications Features • • • • Low ON-resistance. High-speed switching. 2.5V drive. High ESD Voltage TYP 300V [Built-in one side diode for protection between Gate-to-Source].

3LN03SS

Abstract: D2006 TYP300V IT08161 IT07519
Contextual Info: 3LN03SS 注文コード No. N 8 2 3 1 三洋半導体データシート N 3LN03SS N チャネル MOS 形シリコン電界効果トランジスタ 汎用スイッチングデバイス 特長 ・低オン抵抗。 ・高速スイッチング。 ・2.5V 駆動。

EC4404C

Contextual Info: EC4404C Ordering number : ENN8122 N-Channel Silicon MOSFET EC4404C General-Purpose Switching Device Applications Features • • • • Low ON-resistance. High-speed switching. 2.5V drive. High resistance to damage from ESD typ 300V [with a protection diode connected between the gate and source].