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    Contextual Info: 3LN03M Ordering number : ENN8153 N-Channel Silicon MOSFET 3LN03M General-Purpose Switching Device Applications Features • • • • Low ON-resistance. High-speed switching. 2.5V drive. High ESD Voltage TYP 300V [Built-in one side diode for protection between Gate-to-Source].


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    3ln03menn81533ln03m/d PDF

    diode marking YG

    Abstract: CISS 3010 3LN03M marking YG
    Contextual Info: 3LN03M Ordering number : ENN8153 N-Channel Silicon MOSFET 3LN03M General-Purpose Switching Device Applications Features • • • • Low ON-resistance. High-speed switching. 2.5V drive. High ESD Voltage TYP 300V [Built-in one side diode for protection between Gate-to-Source].


    Original
    3ln03menn8153diode marking ygciss 3010+1marking yg PDF