N0806PE Search Results
N0806PE Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
|---|---|---|---|
3LP04MHContextual Info: 3LP04MH Ordering number : ENA0551 P-Channel Silicon MOSFET 3LP04MH General-Purpose Switching Device Applications Features • 1.5V drive. Specifications Absolute Maximum Ratings at Ta=25°C Parameter Symbol Conditions Ratings Unit Drain-to-Source Voltage VDSS |
Original |
3lp04mhena0551900mm2a0551-4/4 | |
3LN04MH
Abstract: sy 360 diode
|
Original |
3ln04mhena0550900mm2a0550-4/4+1 | |
MCH3435
Abstract: MCH5834 SS0503SH IT1180
|
Original |
mch5834mch3435ss0503sh900mm2+5 | |
VEC2812Contextual Info: VEC2812 注文コード No. N A 0 3 9 2 三洋半導体データシート N VEC2812 MOSFET : N チャネル MOS 型シリコン電界効果トランジスタ SBD : ショットキバリアダイオード 汎用スイッチングデバイス 特長 ・DC / DC コンバータ用。 |
Original |
vec2812900mm2n0806petc-00000280+4 | |
VEC2812Contextual Info: VEC2812 Ordering number : ENA0392 SANYO Semiconductors DATA SHEET VEC2812 MOSFET : N-Channel Silicon MOSFET SBD : Schottky Barrier Diode General-Purpose Switching Device Applications Features • • • • DC / DC converter. Composite type with an N-channel sillicon MOSFET and a schottky barrier diode contained in one package |
Original |
vec2812ena0392a0392-6/6 | |
MCH3435
Abstract: MCH5834 SS0503SH
|
Original |
mch5834ena0558mch3435ss0503sh+1 |