IRHE7110 Search Results

2N7334

Abstract: irfg9110 H24 SMD
Contextual Info: Other Products from IR Government and Space H EX FET Power M O SFETs Radiation Hardened N - and P-Channel Part • d@ T ,= 25°C Iq@ Tq = 100*C A (A) RthJC Max. (K/W) Pd@ Tq = 25°C Number BVq ss (V) RDS(on) (Ohms) IRHE7110 100 IRHE8110 IRHE7130 IRHE8130

Contextual Info: Data Sheet No. PD-9.732A IN T E R N A T IO N A L R E C T IF IE R IO R AVALANCHE ENERGY AND dv/dt RATED IRHE7110 IRHEB110 HEXFET TRANSISTORS Jt X \ n -c h a n n e l G MEGA RAD HARD 100 Volt, 0.60Q, MEGA RAD HARD HEXFET International Rectifier's MEGA RAD HARD technology

IRHE3110

Abstract: IRHE4110 IRHE7110 IRHE8110 LCC-18
Contextual Info: PD - 90732E RADIATION HARDENED POWER MOSFET SURFACE MOUNT LCC-18 IRHE7110 100V, N-CHANNEL RAD Hard HEXFET TECHNOLOGY Product Summary Part Number IRHE7110 IRHE3110 IRHE4110 IRHE8110 Radiation Level 100K Rads (Si) 300K Rads (Si) 600K Rads (Si) 1000K Rads (Si)

aiwa transformer

Contextual Info: Data Sheet No. PD-9.732A INTERNATIONAL RECTIFIER TO R AVALANCHE ENERGY AND dv/dt RATED IRHE7110 HEXFET TRANSISTORS IRHE8110 N-CHANNEL MEGA RAD HARD 100 Volt, 0.60Q, MEGA RAD HARO HEXFET International Rectifier’s MEGA RAD HARD technology HEXFETs demonstrate excellent threshold voltage stability

leadless chip carrier

Abstract: LCC Package
Contextual Info: Pre-Irradiation IRHE7110, IRHE8110 Devices  See Figures 18 through 30 for pre-radiation † Total Dose Irradiation with VGS Bias. curves ‚ Repetitive Rating; Pulse width limited by maximum junction temperature. Refer to current HEXFET reliability report.

H84 diode

Abstract: til 31a C055 H-17 IRHE7110 IRHE8110 9732-A
Contextual Info: Data Sheet No. PD-9.732A INTERNATIONAL RECTIFIER IÖ R AVALANCHE ENERGY AND dv/dt RATED HEXFET TRANSISTORS IRHE7110 Q IRHE8110 N-CHANNEL MEGA RAD HARD 100 Volt, 0.60 2, MEGA RAD HARD HEXFET International Rectifier's MEGA RAD HARD technology HEXFETs demonstrate excellent threshold voltage stability

IRHE7110

Abstract: IRHE7130 IRHE8110 IRHE8130
Contextual Info: PD - 90732B IRHE7110 IRHE8110 REPETITIVE AVALANCHE AND dv/dt RATED HEXFET TRANSISTOR N CHANNEL MEGA HARD RAD 100Volt, 0.60Ω Ω , MEGA RAD HARD HEXFET International Rectifier’s RAD HARD technology HEXFETs demonstrate excellent threshold voltage stability and breakdown voltage stability at total

JANSR2N7261

Contextual Info: International lÜRectifier Government and Space HEXFET Power MOSFETs Radiation Hardened N & P Channel R tltJC Max. Pd@ Case rc = ioo°c TC = 25°C Outline A (K/W) (W) Number (1) (2) Pari b v dss Number (V) RDS(on) (Ohms) IRHE7110 100 0.60 3.1 2.0 11 11 IRHE8110

Contextual Info: PD - 90732E RADIATION HARDENED POWER MOSFET SURFACE MOUNT LCC-18 IRHE7110 100V, N-CHANNEL RAD Hard HEXFET TECHNOLOGY Product Summary Part Number IRHE7110 IRHE3110 IRHE4110 IRHE8110 Radiation Level 100K Rads (Si) 300K Rads (Si) 600K Rads (Si) 1000K Rads (Si)

LCC-18

Abstract: 20V, 3.5A regulator DIODE B44 IRHE3110 IRHE4110 IRHE7110 IRHE8110
Contextual Info: PD - 90732D RADIATION HARDENED POWER MOSFET SURFACE MOUNT LCC-18 IRHE7110 100V, N-CHANNEL ™ RAD Hard HEXFET TECHNOLOGY Product Summary Part Number Radiation Level IRHE7110 100K Rads (Si) IRHE3110 300K Rads (Si) IRHE4110 600K Rads (Si) IRHE8110 1000K Rads (Si)

IRHE7110

Abstract: IRHE7130 IRHE7230 IRHE8110 IRHE8130 IRHE8230 IRHE9130 IRHN7054 IRHN7130 1RHF8130
Contextual Info: 4flss4s2 DQlblbb 2Û4 - From ,R HEXFET Paît Number bvdss V RDS(on) (OHMS) RAD HARD id @ Tq = 25°C •d @ Tc = 100”C RthJC Max. Pd @ Tc = 25-C (A) (A) (K/W) (W) IRHE7110 100 0.60 3.1 2.0 11 11 IRHE8110 100 0.60 3.1 2.0 11 11 22 IRHE7130 100 0.18 8.0 5.0

IRF460

Abstract: SMD TRANSISTOR MARKING k38 smd transistor k38 we 751002 s SMD-6C transistor smd k45 RAD-HARD igbt IRF3504 afl2805s manufactured by international rectifier 550-065
Contextual Info: Aerospace and Defense Products Short Form Catalog 2007 Welcome to the Aerospace and Defense Products Short Form Catalog. Inside is an overview of our product line including product specific information. To learn more, visit our web site at irf.com where you will find technical documents, data sheets for all products, application notes, design tips, technical papers, application-specific information,

IRFM9034

Abstract: irh7c50se IRFM460 irhy IRFE310 international rectifier p JANSR2N7261
Contextual Info: International Rectifier Government and Space Products BVDSS Part Number Channel V RDS(on) (Ω) PD @ TC = 25°C ID @ T =100°C C (A) ID @ T =25 C (A) Total Dose Rating Rads (Si) (W) Fax-on-Demand HEXFET Power MOSFETs to view a data sheet, click on the part number

10RIA10

Abstract: HFA40HF120 irfm9034 10RIA100 10RIA120 10RIA20 10RIA40 10RIA60 JANSR2N7261 70HF
Contextual Info: Index International Rectifier Government and Space Products Level of Quality Part Number Rectifiers Voltage Current CECC Issue Issue Assessment and CECC V (A) Specs Number Date 50 000 Screen Level Options Fax-on-Demand CECC-Qualifed, Europe Mfg. in Italy

MO-D36AB

Abstract: IRF9510 SEC IRF510 SEC 2n6845 jantx D 10.7 A IRF540 smd irf740 STAND FOR irfm9230 2N7237 JANTXV BC 542
Contextual Info: Government/ Space Products Products From ir Life, Power-Age, Environmental and Military Testing Capabilities — USA MIL-S-19500 Qualified Life Tests and Power-Age Capabilities A. H ig h te m p e ra tu re sto ra g e life te stin g up to 2 0 0 ° C . 0 . H T R B te st c a p a b ilitie s o v e r 2 5,00 0 p o s itio n s for V G S a n d for

IRF1644

Abstract: 12CTQ030-12CT0045 10JQ030-10JQ100 IRL0024 31D003-31D010 IRKT210-16 IRF1401 6cw 78 IRF140-143 IRFT003
Contextual Info: International i « r R e c tifie r PART NO./SERIES 100HF20-100HF160. 100JB05L-100JB12L. 10CTF10-10CTF40. 10CTQ140.150. 10D05-10010.

2N7550

Abstract: 2N7549 2n7545 2N7476T1 smd 92112 2N7546 IRHNJ9130SCS 2N7471 2N7426 2N7468
Contextual Info: Hi-Rel Products Shortform Hermetic MOSFETs High Voltage MOSFETs for PFC and Primary Switch Applications Hi-Rel Components Schottky and HEXFRED Products Hi-Rel Schottky Diodes Hi-Rel HEXFRED  Diodes Hi-Rel Linear and Switching Regulators Fixed Voltage Regulators

2N6764 JANTX

Abstract: 91447 IR2113L
Contextual Info: Government / Space Products Catalog of Available Documents Revised 5/11/99 www.irf.com IR ProCenter Fax-On-Demand 310 252-7100  Radiation-Hardened HEXFET Description Datasheets IRH7054 IRH7130 IRH7150 IRH7230 IRH7250 IRH7250SE IRHF7330SE IRHF7430SE IRH7450

2N6782 JANTX

Abstract: 2N6758 JANTX 2N6756 JANTX 2N6766 JANTX 2N6792 JANTX 2N6796U 60022 2N7236 2n6806 jantx 2N6770 JANTX
Contextual Info: Government / Space Products Catalog of Available Documents Revised 8/27/98 www.irf.com IR ProCenter Fax-On-Demand 310 252-7100  Radiation-Hardened HEXFET Document # Pages Date IRH7054 90883 5 Oct-96 IRH7150 90677 13 Oct-96 IRH7250 90697 13 Oct-96 IRH7450SE

Contextual Info: INTE RNATIONAL RECTIFIER 2bE D • HflSSMSS OülOlfi? Q ■ Government/ Space Products T-39-ôl International ^¡Rectifier Radiation Hard HEXFETs N-Channel V d s Drain Part Number Source Voltage Volts On-sitata Resistance (Ohms) IRHN7150 IRHN8150 IRHN7250

Contextual Info: I n t e r n a t io n a l R e c t if ie r Government and Space Products Part Numb« Wffl bvdss Vota ROS(on) (Ohm) ID* TC«25" 4A"P*) Iq O TolOO* (Amp») Total Dow Riling Rids (St) Pq O Tc»2P (Witts) Fu-ooDwnmd Numbtr _ _ _ _ _ _ _ -_ _ _ _ _ _ _ _ _ _ _