IRFZ24 MOSFET Search Results

mosfet ir 250 n

Contextual Info: IRFZ24 Advanced Power MOSFET FEATURES B ^ dss - 60 V ♦ Avalanche Rugged Technology ^ D S o n = ♦ Rugged Gate Oxide Technology ♦ Lower Input Capacitance lD = 0 .0 7 Q 17 A ♦ Improved Gate Charge ♦ Extended Safe Operating Area ♦ 175°C Operating Temperature

SSP60N06

Abstract: irf630 irf640 SSP50N06 ssp15n06
Contextual Info: MOSFETs FUNCTION GUIDE TO-220 N-CHANNEL Part Number IRFZ10 BVdss^V lD on)(A) 50 10.00 15.00 16.00 30.00 IRFZ20 SSP15N05 IRFZ30 IRFZ40 SSP50N05 SSP60N05 IRFZ14 IRFZ24 60 SSP15N06 IRFZ34 IRFZ44 SSP50N06 SSP60N06 IRF511 80 IRF521 IRF531 IRF541 IRF510 IRF520

IRFZ24

Abstract: M150 rectifier
Contextual Info: PD-9.594A International iioR Rectifier IRFZ24 HEXFET Power MOSFET • • • • • Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Ease of Paralleling Simple Drive Requirements 60V ^DSS - ^DS on - 0.1 O il lD = 1 7 A Description DATA

IRFZ24

Contextual Info: IRFZ24 Advanced Power MOSFET FEATURES BVDSS = 60 V ♦ Avalanche Rugged Technology RDS on = 0.07Ω ♦ Rugged Gate Oxide Technology ♦ Lower Input Capacitance ID = 17 A ♦ Improved Gate Charge ♦ Extended Safe Operating Area TO-220 ♦ 175°C Operating Temperature

IRFZ24PBF

Abstract: IRFZ24 SiHFZ24 SiHFZ24-E3
Contextual Info: IRFZ24, SiHFZ24 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 60 RDS(on) (Ω) VGS = 10 V • 175 °C Operating Temperature 0.10 Qg (Max.) (nC) 25 • Fast Switching Qgs (nC) 5.8 • Ease of Paralleling Qgd (nC) 11

irfz24

Abstract: 48 H diode
Contextual Info: IRFZ24, SiHFZ24 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 60 RDS(on) () VGS = 10 V • 175 °C Operating Temperature 0.10 Qg (Max.) (nC) 25 • Fast Switching Qgs (nC) 5.8 • Ease of Paralleling Qgd (nC) 11

irfz24

Contextual Info: IRFZ24, SiHFZ24 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 60 RDS(on) () VGS = 10 V • 175 °C Operating Temperature 0.10 Qg (Max.) (nC) 25 • Fast Switching Qgs (nC) 5.8 • Ease of Paralleling Qgd (nC) 11

Contextual Info: IRFZ24 Advanœ d Power MOSFET FEATURES B V DSS = 60 V ♦ Avalanche Rugged Technology ^ D S o n - ♦ Rugged Gate Oxide Technology ♦ Lower Input Capacitance lD = 0 .0 7 Q 17 A ♦ Improved Gate Charge ♦ Extended Safe Operating Area T O -220 ♦ 175°C Operating Temperature

Contextual Info: N-CHANNEL POWER MOSFETS IRFZ24/20 FEATURES • • • • • • • TO-220 Lower R d s io n Improved inductive ruggedness Fast switching times Rugged polysilicon gate cell structure Lower input capacitance Extended safe operating area Improved high tem perature reliability

Contextual Info: IRFZ24, SiHFZ24 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 60 RDS(on) () VGS = 10 V • 175 °C Operating Temperature 0.10 Qg (Max.) (nC) 25 • Fast Switching Qgs (nC) 5.8 • Ease of Paralleling Qgd (nC) 11

Contextual Info: IRFZ24, SiHFZ24 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 60 RDS(on) () VGS = 10 V • 175 °C Operating Temperature 0.10 Qg (Max.) (nC) 25 • Fast Switching Qgs (nC) 5.8 • Ease of Paralleling Qgd (nC) 11

Contextual Info: IRFZ24, SiHFZ24 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 60 RDS(on) () VGS = 10 V • 175 °C Operating Temperature 0.10 Qg (Max.) (nC) 25 • Fast Switching Qgs (nC) 5.8 • Ease of Paralleling Qgd (nC) 11

IRFZ24

Contextual Info: IRFZ24 Advanced Power MOSFET FEATURES B V DSS = 60 V ♦ A valanche Rugged Technology ^ D S o n - ♦ Rugged G ate O xide Technology ♦ Lower Input Capacitance lD = 0 .0 7 £ 2 17 A ♦ Im proved G ate Charge ♦ Extended Safe O perating Area TO-220 ♦ 175°C O perating Tem perature

Contextual Info: IRFZ24 Transistors N-Channel Enhancement MOSFET Military/High-RelN V BR DSS (V)60 V(BR)GSS (V) I(D) Max. (A)17 I(DM) Max. (A) Pulsed I(D)12 @Temp (øC)100# IDM Max (@25øC Amb)68 @Pulse Width (s) (Condition) Absolute Max. Power Diss. (W)60 Minimum Operating Temp (øC)-55õ

Contextual Info: International ¡iorí Rectifier MäSSUSE 0 Q lS 7 b b I IN R AÔ2 PD-9.594A IRFZ24 IN T E R N A T IO N A L HEXFET Power M O S FE T R E C T IF IE R bSE T> • Dynamic dv/dt Rating • • • • 175°C Operating Temperature Fast Switching Ease of Paralleling

IRFZ25

Abstract: IRFZ22 mosfet z24 mosfet IRFZ20
Contextual Info: IRFZ24/Z25 IRFZ20/Z22 N-CHANNEL POWER MOSFETS FEATURES • • • • • • • L o w e r R d s o n Im p ro v e d in d u c tiv e ru g g e d n e s s F a s t s w itc h in g tim e s R u g g e d p o ly s ilic o n g a te c e ll s tru c tu re L o w e r in p u t c a p a c ita n c e

IRF540 n-channel MOSFET

Abstract: IRF540 mosfet with maximum VDS 12v Zener diode with 9v 5V GATE TO SOURCE VOLTAGE MOSFET IRF540 mosfet series connection of mosfet TO 220 Package High current N CHANNEL MOSFET Zener 9v 12v irlz44 20W Solenoid Driver
Contextual Info: MIC5018 Micrel MIC5018 IttyBitty High-Side MOSFET Driver Preliminary Information General Description Features The MIC5018 IttyBitty™ high-side MOSFET driver is designed to switch an N-channel enhancement-type MOSFET from a TTL compatible control signal in high- or low-side

IRF540

Abstract: IRF540 mosfet with maximum VDS 30 V FULLY PROTECTED MOSFET IRFZ24 IRLZ44 MH10 MIC5018 MIC5018BM4 MIC5018YM4 Si9410DY
Contextual Info: MIC5018 IttyBitty High-Side MOSFET Driver General Description Features The MIC5018 IttyBitty™ high-side MOSFET driver is designed to switch an N-channel enhancement-type MOSFET from a TTL compatible control signal in high- or low-side switch applications. This driver features the tiny

IRFZ25

Abstract: IRFZ12 50N06L IRFZ24 60N06 sp60n06
Contextual Info: FUNCTION GUIDE POWER MOSFETs 1. SELECTION GUIDE TO-220 N-CHANNEL Part Number BVdss V ID(on)(A) RDS(on)( Q ) 50.00 5.90 8.00 7.20 14.00 15.00 15.00 25.00 25.00 30.00 35.00 35.00 35.00 60.00 0.30 0.30 0.20 0.12 0.15 0.10 0.07 0.07 0.05 0.04 0.035 0.028 0.018

Contextual Info: IRFZ24S, IRFZ24L, SiHFZ24S, SiHFZ24S Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY • Advanced Process Technology VDS V 60 RDS(on) (Ω) • Surface Mount (IRFZ24S/SiHFZ24S) VGS = 10 V 0.10 Qg (Max.) (nC) 25 Qgs (nC) 5.8 Qgd (nC) 11 Configuration

Contextual Info: IRFZ24S, IRFZ24L, SiHFZ24S, SiHFZ24S Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY • Advanced Process Technology VDS V 60 RDS(on) (Ω) • Surface Mount (IRFZ24S/SiHFZ24S) VGS = 10 V 0.10 Qg (Max.) (nC) 25 Qgs (nC) 5.8 Qgd (nC) 11 Configuration

5d surface mount diode

Abstract: IRFZ2 IRFZ24L IRFZ24 SiHFZ24L SiHFZ24S SiHFZ24S-E3 IRFZ24S SiHFZ24
Contextual Info: IRFZ24S, IRFZ24L, SiHFZ24S, SiHFZ24S Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY • Advanced Process Technology VDS V 60 RDS(on) (Ω) VGS = 10 V Qg (Max.) (nC) 25 Qgs (nC) 5.8 Qgd (nC) 11 Configuration • Low-ProfileThrough-Hole (IRFZ24L, SiHFZ24L)

irfz24 d2pak

Contextual Info: IRFZ24S, IRFZ24L, SiHFZ24S, SiHFZ24S Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V RDS(on) () VGS = 10 V 0.10 Qg (Max.) (nC) 25 Qgs (nC) 5.8 Qgd (nC) 11 Configuration I2PAK • Halogen-free According to IEC 61249-2-21 Definition • Advanced Process Technology

Contextual Info: N-Channel MOSFET Transistors Part No. Drain-Source On-State Braekdown DS Current Voltage Static DS Resistance Part No. MOSFET Drain-Source On-State Braekdown DS Current Voltage Static DS Resistance Package Bulk/Reel BVDSS V ID(ON)(A) RDS(ON)(Ω) BVDSS(V)