IRFZ24L Search Results

IRFZ24L Datasheets (4)

Part	ECAD Model	Manufacturer	Description	Datasheet Type	PDF	PDF Size	Page count
IRFZ24L		International Rectifier	HEXFET Power MOSFET	Original	PDF	365.54KB	10
IRFZ24L		International Rectifier	Power MOSFET(Vdss=55V, Rds(on)=0.07ohm, Id=17A)	Original	PDF	160.21KB	10
IRFZ24L		Vishay Siliconix	FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 60V 17A TO-262	Original	PDF		6
IRFZ24L		Unknown		Scan	PDF	169.6KB	6

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Vishay Siliconix


Vishay Siliconix IRFZ24L MOSFET N-CH 60V 17A TO262-3
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IRFZ24L Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
Contextual Info: PD - 9.891A IRFZ24S/L HEXFET Power MOSFET l l l l l Advanced Process Technology Surface Mount IRFZ24S Low-profile through-hole (IRFZ24L) 175°C Operating Temperature Fast Switching D VDSS = 60V RDS(on) = 0.10Ω G ID = 17A S Description Third Generation HEXFETs from International Rectifier	Original	IRFZ24S/L IRFZ24S) IRFZ24L) 08-Mar-07	PDF
Contextual Info: IRFZ24S, IRFZ24L, SiHFZ24S, SiHFZ24S Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY • Advanced Process Technology VDS V 60 RDS(on) (Ω) • Surface Mount (IRFZ24S/SiHFZ24S) VGS = 10 V 0.10 Qg (Max.) (nC) 25 Qgs (nC) 5.8 Qgd (nC) 11 Configuration	Original	IRFZ24S, IRFZ24L, SiHFZ24S IRFZ24S/SiHFZ24S) IRFZ24L/SiHFZ24L) O-262) O-263) 18-Jul-08	PDF
Contextual Info: IRFZ24S, IRFZ24L, SiHFZ24S, SiHFZ24S Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY • Advanced Process Technology VDS V 60 RDS(on) (Ω) • Surface Mount (IRFZ24S/SiHFZ24S) VGS = 10 V 0.10 Qg (Max.) (nC) 25 Qgs (nC) 5.8 Qgd (nC) 11 Configuration	Original	IRFZ24S, IRFZ24L, SiHFZ24S IRFZ24S/SiHFZ24S) IRFZ24L/SiHFZ24L) O-262) O-263) 12-Mar-07	PDF
Contextual Info: IRFZ24S, IRFZ24L, SiHFZ24S, SiHFZ24S Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V RDS(on) () VGS = 10 V 0.10 Qg (Max.) (nC) 25 Qgs (nC) 5.8 Qgd (nC) 11 Configuration I2PAK • Halogen-free According to IEC 61249-2-21 Definition • Advanced Process Technology	Original	IRFZ24S, IRFZ24L, SiHFZ24S SiHFZ24L 2002/95/EC 11-Mar-11	PDF
Contextual Info: IRFZ24S, IRFZ24L, SiHFZ24S, SiHFZ24S Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V RDS(on) () VGS = 10 V 0.10 Qg (Max.) (nC) 25 Qgs (nC) 5.8 Qgd (nC) 11 Configuration I2PAK • Halogen-free According to IEC 61249-2-21 Definition • Advanced Process Technology	Original	IRFZ24S, IRFZ24L, SiHFZ24S SiHFZ24L 2002/95/EC 11-Mar-11	PDF
Contextual Info: IRFZ24S, IRFZ24L, SiHFZ24S, SiHFZ24S Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V RDS(on) () VGS = 10 V 0.10 Qg (Max.) (nC) 25 Qgs (nC) 5.8 Qgd (nC) 11 Configuration I2PAK • Halogen-free According to IEC 61249-2-21 Definition • Advanced Process Technology	Original	IRFZ24S, IRFZ24L, SiHFZ24S SiHFZ24L 2002/95/EC 2011/65/EU	PDF
AN-994 Abstract: IRFZ24 IRFZ24L IRFZ24S diode ir 10-16 Contextual Info: PD - 9.891A IRFZ24S/L HEXFET Power MOSFET l l l l l Advanced Process Technology Surface Mount IRFZ24S Low-profile through-hole (IRFZ24L) 175°C Operating Temperature Fast Switching D VDSS = 60V RDS(on) = 0.10Ω G ID = 17A S Description Third Generation HEXFETs from International Rectifier	Original	IRFZ24S/L IRFZ24S) IRFZ24L) AN-994 IRFZ24 IRFZ24L IRFZ24S diode ir 10-16	PDF
Contextual Info: P D -9.891 A In te rn a tio n a l I Q R Rectifier IR F Z 2 4 S /L HEXFET Power M OSFET Advanced Process Technology Surface Mount IRFZ24S Low-profile through-hole (IRFZ24L) 175°C Operating Temperature Fast Switching V dss = 60V R D S (o n ) = 0 .1 0 ft	OCR Scan	IRFZ24S) IRFZ24L)	PDF
Contextual Info: IRFZ24S, IRFZ24L, SiHFZ24S, SiHFZ24S Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V RDS(on) () VGS = 10 V 0.10 Qg (Max.) (nC) 25 Qgs (nC) 5.8 Qgd (nC) 11 Configuration I2PAK • Halogen-free According to IEC 61249-2-21 Definition • Advanced Process Technology	Original	IRFZ24S, IRFZ24L, SiHFZ24S SiHFZ24L 2002/95/EC 11-Mar-11	PDF
IRFZ24S Abstract: AN-994 IRFZ24 IRFZ24L Contextual Info: PD - 9.891A IRFZ24S/L HEXFET Power MOSFET l l l l l Advanced Process Technology Surface Mount IRFZ24S Low-profile through-hole (IRFZ24L) 175°C Operating Temperature Fast Switching D VDSS = 60V RDS(on) = 0.10Ω G ID = 17A S Description Third Generation HEXFETs from International Rectifier	Original	IRFZ24S/L IRFZ24S) IRFZ24L) IRFZ24S AN-994 IRFZ24 IRFZ24L	PDF
Contextual Info: IRFZ24S, IRFZ24L, SiHFZ24S, SiHFZ24S Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V RDS(on) () VGS = 10 V 0.10 Qg (Max.) (nC) 25 Qgs (nC) 5.8 Qgd (nC) 11 Configuration I2PAK • Halogen-free According to IEC 61249-2-21 Definition • Advanced Process Technology	Original	IRFZ24S, IRFZ24L, SiHFZ24S SiHFZ24L 2002/95/EC 2011/65/EU	PDF
5d surface mount diode Abstract: IRFZ2 IRFZ24L IRFZ24 SiHFZ24L SiHFZ24S SiHFZ24S-E3 IRFZ24S SiHFZ24 Contextual Info: IRFZ24S, IRFZ24L, SiHFZ24S, SiHFZ24S Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY • Advanced Process Technology VDS V 60 RDS(on) (Ω) VGS = 10 V Qg (Max.) (nC) 25 Qgs (nC) 5.8 Qgd (nC) 11 Configuration • Low-ProfileThrough-Hole (IRFZ24L, SiHFZ24L)	Original	IRFZ24S, IRFZ24L, SiHFZ24S SiHFZ24L 18-Jul-08 5d surface mount diode IRFZ2 IRFZ24L IRFZ24 SiHFZ24S-E3 IRFZ24S SiHFZ24	PDF
Contextual Info: IRFZ24S, IRFZ24L, SiHFZ24S, SiHFZ24S Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V RDS(on) () VGS = 10 V 0.10 Qg (Max.) (nC) 25 Qgs (nC) 5.8 Qgd (nC) 11 Configuration I2PAK • Halogen-free According to IEC 61249-2-21 Definition • Advanced Process Technology	Original	IRFZ24S, IRFZ24L, SiHFZ24S SiHFZ24L 2002/95/EC O-262)	PDF
irfz24 d2pak Contextual Info: IRFZ24S, IRFZ24L, SiHFZ24S, SiHFZ24S Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V RDS(on) () VGS = 10 V 0.10 Qg (Max.) (nC) 25 Qgs (nC) 5.8 Qgd (nC) 11 Configuration I2PAK • Halogen-free According to IEC 61249-2-21 Definition • Advanced Process Technology	Original	IRFZ24S, IRFZ24L, SiHFZ24S SiHFZ24L 2002/95/EC 18-Jul-08 irfz24 d2pak	PDF

AN-994 Abstract: IRFZ24 IRFZ24L IRFZ24S Contextual Info: PD - 9.891A IRFZ24S/L HEXFET Power MOSFET l l l l l Advanced Process Technology Surface Mount IRFZ24S Low-profile through-hole (IRFZ24L) 175°C Operating Temperature Fast Switching D VDSS = 60V RDS(on) = 0.10Ω G ID = 17A S Description Third Generation HEXFETs from International Rectifier	Original	IRFZ24S/L IRFZ24S) IRFZ24L) 12-Mar-07 AN-994 IRFZ24 IRFZ24L IRFZ24S	PDF
irf510 switch Abstract: IRFBA40N60C 800v irf IRL2505 IRF634L IRF540NL IRF520N IRFU9024N IRFU3910 IRL3215 Contextual Info: International Rectifier The HEXFET Through Hole Navigator COLOR CODING: EXISTING Products NEW Products released to production in last 6-9 months UPCOMING Products to be released within next 3-4 months POTENTIAL Products no current plans. see bus.mgmt.	Original	O-262 O-220 IRL3302 IRL3202 IRL3102 IRL3402 IRL3502 Super220TM O-247 irf510 switch IRFBA40N60C 800v irf IRL2505 IRF634L IRF540NL IRF520N IRFU9024N IRFU3910 IRL3215	PDF