IRFY130 Search Results

IRFY130C

Abstract: IRFY130CM
Contextual Info: Provisional Data Sheet No. PD 9.1286C IRFY130CM HEXFET POWER MOSFET N-CHANNEL Product Summary 100 Volt, 0.18Ω HEXFET HEXFET technology is the key to International Rectifier’s advanced line of power MOSFET transistors. The efficient geometry design achieves very low on-state resistance combined with high transconductance.

IRFY130

Abstract: 100V11A
Contextual Info: IRFY130 MECHANICAL DATA Dimensions in mm inches 4.70 5.00 0.70 0.90 3.56 Dia. 3.81 VDSS ID(cont) RDS(on) 10.41 10.92 13.39 13.64 10.41 10.67 16.38 16.89 N–CHANNEL POWER MOSFET FOR HI–REL APPLICATIONS 12.70 19.05 1 2 3 100V 11A 0.19W FEATURES 0.89 1.14

Contextual Info: IRFY130 Transistors N-Channel Enhancement MOSFET Military/High-RelN V BR DSS (V)100 V(BR)GSS (V)20 I(D) Max. (A)11 I(DM) Max. (A) Pulsed I(D)7.0 @Temp (øC)100# IDM Max (@25øC Amb)44 @Pulse Width (s) (Condition) Absolute Max. Power Diss. (W)45# Minimum Operating Temp (øC)-55

shd226302

Abstract: IRFY130M
Contextual Info: SENSITRON SEMICONDUCTOR SHD226302 TECHNICAL DATA DATA SHEET 222, REV. B Formerly Part Number SHD22632 HERMETIC POWER MOSFET N-CHANNEL FEATURES: œ 100 Volt, .19 Ohm, 11A MOSFET œ Isolated Hermetic Metal Package œ Fast Switching œ Low RDS on œ Equivalent to IRFY130M

IRFY130M

Contextual Info: IRFY130M Dimensions in mm inches . N-Channel MOSFET in a Hermetically sealed TO257AB Metal Package. 10.6 (0.42) 4.6 (0.18) 10.6 (0.42) 3.70 Dia. Nom 1.5(0.53) 16.5 (0.65) 0.8 (0.03) 1 2 3 12.70 (0.50 min) VDSS = 100V ID = 14.4A RDS(ON) = 0.18Ω Ω 1.0 (0.039)

Contextual Info: PD - 91286D POWER MOSFET THRU-HOLE TO-257AA IRFY130C,IRFY130CM 100V, N-CHANNEL HEXFET MOSFET TECHNOLOGY Product Summary Part Number R DS(on) ID Eyelets IRFY130C 0.18 Ω 14.4A Ceramic IRFY130CM 0.18 Ω 14.4A Ceramic HEXFET® MOSFET technology is the key to International

IRFY130C

Abstract: IRFY130CM
Contextual Info: Previous Datasheet Index Next Data Sheet Provisional Data Sheet No. PD 9.1286C IRFY130CM HEXFET POWER MOSFET N-CHANNEL Product Summary 100 Volt, 0.18Ω HEXFET HEXFET technology is the key to International Rectifier’s advanced line of power MOSFET transistors. The efficient geometry design achieves very low on-state resistance combined with high transconductance.

Contextual Info: PD - 94183 POWER MOSFET THRU-HOLE TO-257AA IRFY130,IRFY130M 100V, N-CHANNEL HEXFET MOSFET TECHNOLOGY Product Summary Part Number R DS(on) ID Eyelets IRFY130 0.18 Ω 14.4A Glass IRFY130M 0.18 Ω 14.4A Glass HEXFET® MOSFET technology is the key to International

IRFY130C

Abstract: IRFY130CM
Contextual Info: PD - 91286D POWER MOSFET THRU-HOLE TO-257AA IRFY130C,IRFY130CM 100V, N-CHANNEL HEXFET MOSFET TECHNOLOGY Product Summary Part Number R DS(on) ID Eyelets IRFY130C 0.18 Ω 14.4A Ceramic IRFY130CM 0.18 Ω 14.4A Ceramic HEXFET® MOSFET technology is the key to International

IRFY130C

Abstract: TO257AB
Contextual Info: IRFY130C Dimensions in mm inches . N-Channel MOSFET in a Hermetically sealed TO257AB Metal Package. 10.6 (0.42) 4.6 (0.18) 10.6 (0.42) 3.70 Dia. Nom 1.5(0.53) 16.5 (0.65) 0.8 (0.03) 1 2 3 12.70 (0.50 min) VDSS = 100V ID = 14.4A RDS(ON) = 0.18Ω Ω 1.0 (0.039)

Contextual Info: SENSITRON SEMICONDUCTOR SHD226302 TECHNICAL DATA DATA SHEET 222, REV. B Formerly Part Number SHD22632 HERMETIC POWER MOSFET N-CHANNEL FEATURES: œ 100 Volt, .19 Ohm, 11A MOSFET œ Isolated Hermetic Metal Package œ Fast Switching œ Low RDS on œ Equivalent to IRFY130M

IRFY130M

Abstract: SHD226302
Contextual Info: SENSITRON SEMICONDUCTOR SHD226302 TECHNICAL DATA DATA SHEET 222, REV. B Formerly Part Number SHD22632 HERMETIC POWER MOSFET N-CHANNEL FEATURES: • 100 Volt, .19 Ohm, 11A MOSFET • Isolated Hermetic Metal Package • Fast Switching • Low RDS on • Equivalent to IRFY130M

Contextual Info: IRFY130 MECHANICAL DATA Dimensions in mm inches 4.70 5.00 0.70 0.90 3.56 Dia. 3.81 VDSS ID(cont) RDS(on) 10.41 10.92 13.39 13.64 10.41 10.67 16.38 16.89 N–CHANNEL POWER MOSFET FOR HI–REL APPLICATIONS 12.70 19.05 1 2 3 100V 11A 0.199 FEATURES 0.89 1.14

L014A

Abstract: 00D05 IRFY130
Contextual Info: bOE D • B1331Ô7 DOOOSSG SEMELAB 3ÔT ■ S M L B PLC SEMELAB 'T 'Z °\ -w IRFY130 MECHANICAL DATA Dimensions in mm HERMETICALLY SEALED N-CHANNEL POWER MOSFET FOR HI-REL APPLICATIONS FEATURES • HERMETICT0220 METALOR CERAMIC SURFACE MOUNT PACKAGES • SCREENING OPTIONS AVAILABLE

Contextual Info: IRFY130M Transistors N-Channel Enhancement MOSFET Military/High-RelN V BR DSS (V)100 V(BR)GSS (V) I(D) Max. (A)10.8 I(DM) Max. (A) Pulsed I(D) @Temp (øC) IDM Max (@25øC Amb)43.2 @Pulse Width (s) (Condition) Absolute Max. Power Diss. (W)45 Minimum Operating Temp (øC)

Contextual Info: IRFY130C Transistors N-Channel Enhancement MOSFET Military/High-RelN V BR DSS (V)100 V(BR)GSS (V)20 I(D) Max. (A)14.4 I(DM) Max. (A) Pulsed I(D)9.1 @Temp (øC)100# IDM Max (@25øC Amb)57.6 @Pulse Width (s) (Condition) Absolute Max. Power Diss. (W)75# Minimum Operating Temp (øC)-55

IRF460

Abstract: SMD TRANSISTOR MARKING k38 smd transistor k38 we 751002 s SMD-6C transistor smd k45 RAD-HARD igbt IRF3504 afl2805s manufactured by international rectifier 550-065
Contextual Info: Aerospace and Defense Products Short Form Catalog 2007 Welcome to the Aerospace and Defense Products Short Form Catalog. Inside is an overview of our product line including product specific information. To learn more, visit our web site at irf.com where you will find technical documents, data sheets for all products, application notes, design tips, technical papers, application-specific information,

IRFY130

Abstract: SFF130J
Contextual Info: §s i_ PRELIMINARY SFF130J SOLID STATE DEVICES, INC 14849 Firestone Boulevard • La Mirada,CA 90638 Phone: 714 670-SSDI (7734) ■ Fax: (714) 522-7424 14 AMP 100 VOLTS 0.16 Q N-CHANNEL POWER MOSFET Designer’s Data Sheet FEATURES: • • • • •

IRFM9034

Abstract: irh7c50se IRFM460 irhy IRFE310 international rectifier p JANSR2N7261
Contextual Info: International Rectifier Government and Space Products BVDSS Part Number Channel V RDS(on) (Ω) PD @ TC = 25°C ID @ T =100°C C (A) ID @ T =25 C (A) Total Dose Rating Rads (Si) (W) Fax-on-Demand HEXFET Power MOSFETs to view a data sheet, click on the part number

irf5n5210sc

Abstract: IRHNA57064SCS IRHM597260 irf5n5210 irhna597160scs irhf7110scs IRHG57110 IRHNA57264SESCS 35CLQ045SCS 12CLQ150SCS
Contextual Info: PD - 94246A IRHG567110 RADIATION HARDENED 100V, Combination 2N-2P-CHANNEL RAD-Hard HEXFET POWER MOSFET 4# TECHNOLOGY THRU-HOLE MO-036AB Product Summary Part Number IRHG567110 IRHG563110 IRHG567110 IRHG563110 Radiation Level RDS(on) 100K Rads (Si)

Contextual Info: International Government and Space HEXFET Power MOSFETs IlC T R e c H ffe r Hermetic Package N & P Channel Part Number b v DSS V RDS(on) (Ohms) lp @ Tr = 25°C <D@ TC = 100°C R thJC Max. Pd @ Case Tc = 25°C Outline (»> (A) (K/W) (W) Number (1) 0.6 17

irfm9034

Contextual Info: 1 I n t e r n a t io n a l R e c t if ie r Government and Space Products Pvt Numb« 2 (3) bvdss (Vote) RDS(on) (Ohms) ID« Tc*2T (Amps) 10« TC=100“ (Amps) Pd O Tc«25° (Watts) Fax-onOamand Number Case Styl«, (Cas* (Min») (1) HEXFET Power MOSFETs Hermetic Package, N- and P-Channel

2N7334

Abstract: irfg9110 H24 SMD
Contextual Info: Other Products from IR Government and Space H EX FET Power M O SFETs Radiation Hardened N - and P-Channel Part • d@ T ,= 25°C Iq@ Tq = 100*C A (A) RthJC Max. (K/W) Pd@ Tq = 25°C Number BVq ss (V) RDS(on) (Ohms) IRHE7110 100 IRHE8110 IRHE7130 IRHE8130

10RIA10

Abstract: HFA40HF120 irfm9034 10RIA100 10RIA120 10RIA20 10RIA40 10RIA60 JANSR2N7261 70HF
Contextual Info: Index International Rectifier Government and Space Products Level of Quality Part Number Rectifiers Voltage Current CECC Issue Issue Assessment and CECC V (A) Specs Number Date 50 000 Screen Level Options Fax-on-Demand CECC-Qualifed, Europe Mfg. in Italy