IRFD6 Search Results

IRFD620S

Abstract: CMSD4448
Contextual Info: 19-1555; Rev 1; 3/01 KIT ATION EVALU E L B AVAILA High-Voltage PWM Power-Supply Controller The MAX5003 offers some distinctive advantages: softstart, undervoltage lockout, external frequency synchronization, and fast input voltage feed-forward. The device is designed to operate at up to 300kHz switching frequency. This allows use of miniature magnetic

hcpl 322j

Abstract: hcpl-322j HCPL316
Contextual Info: GA10JT12-247 Normally – OFF Silicon Carbide Junction Transistor VDS VDS ON ID RDS(ON) Features Package •        RoHS Compliant 175 °C maximum operating temperature Temperature independent switching performance Gate oxide free SiC switch

IRFD630

Abstract: HCPL-322J HCPL322J TO-247AB
Contextual Info: GA05JT12-247 Normally – OFF Silicon Carbide Junction Transistor VDS VDS ON ID RDS(ON) Features Package •        RoHS Compliant 175 °C maximum operating temperature Temperature independent switching performance Gate oxide free SiC switch

fet preregulator

Abstract: IRFD620 IRFD620S max5003 MAX5003CEE MAX5003CSE MAX5003EEE MAX5003ESE MAX5003EVKIT irfd6
Contextual Info: 19-1555; Rev 1; 3/01 KIT ATION EVALU E L B AVAILA High-Voltage PWM Power-Supply Controller The MAX5003 offers some distinctive advantages: softstart, undervoltage lockout, external frequency synchronization, and fast input voltage feed-forward. The device is designed to operate at up to 300kHz switching frequency. This allows use of miniature magnetic

YTA630

Abstract: MTW14P20 BSS125 MTAJ30N06HD 2SK2837 equivalent SMU10P05 SMP60N06 replacement STE180N10 RFH75N05E IRFD620
Contextual Info: Power MOSFETs Cross Reference Alphanumerically Part Number VDSS V RDS(ON) (ohm) ID (A) PD (W) Package 2N7000 2N7002 2SJ377 2SJ378 2SJ380 2SJ401 2SJ402 2SJ407 2SJ412 2SJ419 2SJ420 2SJ421 2SJ438 2SJ439 2SJ464 2SJ465 2SJ468 2SJ469 2SJ482 2SJ507 2SJ508 2SJ509

28V to 110V transformer

Abstract: IRFD620S depletion mode ramp generator IRFD620 fet preregulator CMSD4448
Contextual Info: 19-1555; Rev 2; 4/02 KIT ATION EVALU E L B AVAILA High-Voltage PWM Power-Supply Controller General Description The MAX5003 offers some distinctive advantages: softstart, undervoltage lockout, external frequency synchronization, and fast input voltage feed-forward. The

Contextual Info: GA20JT12-247 Normally – OFF Silicon Carbide Junction Transistor VDS VDS ON ID RDS(ON) Features Package •        RoHS Compliant 175 °C maximum operating temperature Temperature independent switching performance Gate oxide free SiC switch

IRFD620

Abstract: IRFD420 IRFD9220 h10 npn
Contextual Info: International lo i Rectifier HEXFET Power MOSFETs HEXDips Low charge HEXFETs reduce gate charge by 40% or more and capacitances by up to 85% without any added device cost. Part Number IRF0C10LC V BR d s s Drain-to-Source ROS(on) lg Continuous On-State Drain Current

simple 19v power supply

Abstract: high voltage regulator using ic 723 fet preregulator MDC217 XFACOILTRCTX03 design of mosfet based power supply CMSD4448 IRFD620 28V to 110V transformer 8 pin 4v power supply converter
Contextual Info: 19-1555; Rev 0; 12/99 KIT ATION EVALU E L B AVAILA High-Voltage PWM Power-Supply Controller The MAX5003 offers some distinctive advantages: softstart, undervoltage lockout, external frequency synchronization, and fast input voltage feed-forward. The device is designed to operate at up to 300kHz switching frequency. This allows use of miniature magnetic

FL110

Abstract: LL110 irf7408 lr014 IRC540 equivalent IRL1Z14G IRFC024 IRFBE30 equivalent IRFCG50 irfbc10lc
Contextual Info: H EXFET Other Products from IR SOT-89 N-Channel V BR q s s Drain-to-Source ROS(on) Part Breakdown On-State Number Voltage Resistance (Volt) (Ohms) IRFS1Z0 100 Power MOSFETs Surface Mount Iq Continuous Drain Current 25°C (Amps) 2.4 0.82 Iq Continuous RthJAMax P d @ T c = 25°C Case

hcpl-322j

Abstract: hcpl 322j
Contextual Info: GA50JT12-247 Normally – OFF Silicon Carbide Junction Transistor VDS VDS ON ID RDS(ON) Features Package •        RoHS Compliant 175 °C maximum operating temperature Temperature independent switching performance Gate oxide free SiC switch