hcpl 322j
Abstract: hcpl-322j HCPL316
Contextual Info: GA10JT12-247 Normally – OFF Silicon Carbide Junction Transistor VDS VDS ON ID RDS(ON) Features Package • RoHS Compliant 175 °C maximum operating temperature Temperature independent switching performance Gate oxide free SiC switch
|
Original
|
ga10jt12-247o-247abga10jt1200e-47+726e-2850e-1011e-900e-3hcpl 322jhcpl-322jhcpl316
|
PDF
|
IRFD630
Abstract: HCPL-322J HCPL322J TO-247AB
Contextual Info: GA05JT12-247 Normally – OFF Silicon Carbide Junction Transistor VDS VDS ON ID RDS(ON) Features Package • RoHS Compliant 175 °C maximum operating temperature Temperature independent switching performance Gate oxide free SiC switch
|
Original
|
ga05jt12-247o-247abga05jt1200e-47+826e-2877e-1062e-1000e-3irfd630hcpl-322jhcpl322jto-247ab
|
PDF
|
|
Contextual Info: GA20JT12-247 Normally – OFF Silicon Carbide Junction Transistor VDS VDS ON ID RDS(ON) Features Package • RoHS Compliant 175 °C maximum operating temperature Temperature independent switching performance Gate oxide free SiC switch
|
Original
|
ga20jt12-247o-247abga20jt1200e-47+426e-2898e-1022e-950e-3
|
PDF
|
hcpl-322j
Abstract: hcpl 322j
Contextual Info: GA50JT12-247 Normally – OFF Silicon Carbide Junction Transistor VDS VDS ON ID RDS(ON) Features Package • RoHS Compliant 175 °C maximum operating temperature Temperature independent switching performance Gate oxide free SiC switch
|
Original
|
ga50jt12-247o-247abga50jt1200e-47+626e-2875e-957e-900e-3hcpl-322jhcpl 322j
|
PDF
|