GA10JT12 Search Results

Contextual Info: GA10JT12-CAL Normally – OFF Silicon Carbide Junction Transistor VDS RDS ON ID (Tc = 25°C) hFE (Tc = 25°C) Features •        = = = = 1200 V 120 mΩ 25 A 80 Package 250 °C Maximum Operating Temperature Gate Oxide Free SiC Switch

GA10JT12

Contextual Info: GA10JT12-263 SPICE Model Parameters Please copy this code from the SPICE model into LTSPICE version 4 software for simulation of the GA10JT12-263. * MODEL OF GeneSiC Semiconductor Inc. * * $Revision: 1.0 $ * $Date: 05-JUN-2015 $ * * GeneSiC Semiconductor Inc.

Contextual Info: GA10JT12-CAL Section VIII: SPICE Model Parameters Please copy this code from the SPICE model into LTSPICE version 4 software for simulation of the GA10JT12-CAL. * MODEL OF GeneSiC Semiconductor Inc. * * $Revision: 2.0 $ * $Date: 12-SEP-2014 $ * * GeneSiC Semiconductor Inc.

Contextual Info: GA10JT12-263 Normally – OFF Silicon Carbide Junction Transistor Features Package •         RoHS Compliant 175 °C Maximum Operating Temperature Gate Oxide Free SiC Switch Exceptional Safe Operating Area Excellent Gain Linearity

hcpl 322j

Abstract: hcpl-322j HCPL316
Contextual Info: GA10JT12-247 Normally – OFF Silicon Carbide Junction Transistor VDS VDS ON ID RDS(ON) Features Package •        RoHS Compliant 175 °C maximum operating temperature Temperature independent switching performance Gate oxide free SiC switch

Contextual Info: GA10JT12-247 Section VIII: SPICE Model Parameters Please copy this code from the SPICE model into LTSPICE version 4 software for simulation of the GA10JT12-247. * MODEL OF GeneSiC Semiconductor Inc. * * $Revision: 2.1 $ * $Date: 29-JAN-2015 $ * * GeneSiC Semiconductor Inc.

ga10jt12

Contextual Info: GA10JT12-247 Normally – OFF Silicon Carbide Junction Transistor Features Package •         RoHS Compliant 175 °C Maximum Operating Temperature Gate Oxide Free SiC Switch Exceptional Safe Operating Area Excellent Gain Linearity

IXDD614

Contextual Info: GA10JT12-263 Normally – OFF Silicon Carbide Junction Transistor VDS VDS ON ID RDS(ON) Features Package •        RoHS Compliant 175 °C maximum operating temperature Temperature independent switching performance Gate oxide free SiC switch

Contextual Info: GA10JT12-247 Normally – OFF Silicon Carbide Junction Transistor VDS VDS ON ID RDS(ON) Features Package •        RoHS Compliant 175 °C maximum operating temperature Temperature independent switching performance Gate oxide free SiC switch

Contextual Info: GA03IDDJT30-FR4 Isolated Gate Driver Gate Driver for SiC SJT with Output and Signal Isolation Features •       VISOLATION PDRIVE fmax = = = 3000 V 5W 350 kHz Product Image Requires single 12 V voltage supply Pin Out compatible with MOSFET driver boards