GA10JT12 Search Results

GA10JT12 Datasheets (2)

Part	ECAD Model	Manufacturer	Description	Datasheet Type	PDF	PDF Size	Page count
GA10JT12-247		GeneSiC Semiconductor	FETs - Single, Discrete Semiconductor Products, TRANS SJT 1.2KV 10A	Original	PDF		9
GA10JT12-263		GeneSiC Semiconductor	Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - TRANS SJT 1200V 25A	Original	PDF	1.3MB

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GeneSic Semiconductor Inc GA10JT12-263 TRANS SJT 1200V 25A
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	GA10JT12-263	Tube			1,250	1 - 10 - 100 - 1000 - 10000 $11.22	Buy Now
Newark	GA10JT12-263	Bulk			1,250	1 - 10 - 100 - 1000 - 10000 -	Buy Now
Vyrian	GA10JT12-263		1,113			1 - 10 - 100 - 1000 - 10000 -	Get Quote
GeneSic Semiconductor Inc GA10JT12-247 TRANS SJT 1200V 10A TO247AB
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DigiKey	GA10JT12-247	Tube			870	1 - 10 - 100 - 1000 $11.22 10000 $11.22	Buy Now
Navitas Semiconductor GA10JT12-263
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Onlinecomponents.com	GA10JT12-263					1 - 10 - 100 - 1000 $12.77 10000 $12.51	Buy Now

GA10JT12 Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
Contextual Info: GA10JT12-CAL Normally – OFF Silicon Carbide Junction Transistor VDS RDS ON ID (Tc = 25°C) hFE (Tc = 25°C) Features •        = = = = 1200 V 120 mΩ 25 A 80 Package 250 °C Maximum Operating Temperature Gate Oxide Free SiC Switch	Original	GA10JT12-CAL GA10JT12 00E-47 26E-28 39E-12 1373E-12	PDF
GA10JT12 Contextual Info: GA10JT12-263 SPICE Model Parameters Please copy this code from the SPICE model into LTSPICE version 4 software for simulation of the GA10JT12-263. * MODEL OF GeneSiC Semiconductor Inc. * * $Revision: 1.0 $ * $Date: 05-JUN-2015 $ * * GeneSiC Semiconductor Inc.	Original	GA10JT12-263 GA10JT12-263. 05-JUN-2015 GA10JT12 833E-48 073E-26 39E-12 1373E-12	PDF
Contextual Info: GA10JT12-CAL Section VIII: SPICE Model Parameters Please copy this code from the SPICE model into LTSPICE version 4 software for simulation of the GA10JT12-CAL. * MODEL OF GeneSiC Semiconductor Inc. * * $Revision: 2.0 $ * $Date: 12-SEP-2014 $ * * GeneSiC Semiconductor Inc.	Original	GA10JT12-CAL GA10JT12-CAL. 12-SEP-2014 GA10JT12 00EARRANTY 00E-47 26E-28 39E-12 1373E-12	PDF
Contextual Info: GA10JT12-263 Normally – OFF Silicon Carbide Junction Transistor Features Package •         RoHS Compliant 175 °C Maximum Operating Temperature Gate Oxide Free SiC Switch Exceptional Safe Operating Area Excellent Gain Linearity	Original	GA10JT12-263 O-263-7L) GA10JT12 833E-48 073E-26 39E-12 1373E-12	PDF
hcpl 322j Abstract: hcpl-322j HCPL316 Contextual Info: GA10JT12-247 Normally – OFF Silicon Carbide Junction Transistor VDS VDS ON ID RDS(ON) Features Package •        RoHS Compliant 175 °C maximum operating temperature Temperature independent switching performance Gate oxide free SiC switch	Original	GA10JT12-247 O-247AB GA10JT12 00E-47 26E-28 50E-10 11E-9 00E-3 hcpl 322j hcpl-322j HCPL316	PDF
Contextual Info: GA10JT12-247 Section VIII: SPICE Model Parameters Please copy this code from the SPICE model into LTSPICE version 4 software for simulation of the GA10JT12-247. * MODEL OF GeneSiC Semiconductor Inc. * * $Revision: 2.1 $ * $Date: 29-JAN-2015 $ * * GeneSiC Semiconductor Inc.	Original	GA10JT12-247 GA10JT12-247. 29-JAN-2015 GA10JT12 833E-48 073E-26 39E-12 1373E-12	PDF
ga10jt12 Contextual Info: GA10JT12-247 Normally – OFF Silicon Carbide Junction Transistor Features Package •         RoHS Compliant 175 °C Maximum Operating Temperature Gate Oxide Free SiC Switch Exceptional Safe Operating Area Excellent Gain Linearity	Original	GA10JT12-247 O-247 GA10JT12 833E-48 073E-26 39E-12 1373E-12	PDF
IXDD614 Contextual Info: GA10JT12-263 Normally – OFF Silicon Carbide Junction Transistor VDS VDS ON ID RDS(ON) Features Package •        RoHS Compliant 175 °C maximum operating temperature Temperature independent switching performance Gate oxide free SiC switch	Original	GA10JT12-263 O-263 GA10JT12 00E-47 26E-28 50E-10 11E-9 00E-3 IXDD614	PDF
Contextual Info: GA10JT12-247 Normally – OFF Silicon Carbide Junction Transistor VDS VDS ON ID RDS(ON) Features Package •        RoHS Compliant 175 °C maximum operating temperature Temperature independent switching performance Gate oxide free SiC switch	Original	GA10JT12-247 O-247AB GA10JT12 00E-47 26E-28 50E-10 11E-9 00E-3	PDF
Contextual Info: GA03IDDJT30-FR4 Isolated Gate Driver Gate Driver for SiC SJT with Output and Signal Isolation Features •       VISOLATION PDRIVE fmax = = = 3000 V 5W 350 kHz Product Image Requires single 12 V voltage supply Pin Out compatible with MOSFET driver boards	Original	GA03IDDJT30-FR4 GA03IDDJT30-FR4 FOD3182	PDF