IRF9610 IR Search Results

IRF9610

Abstract: IRF9611
Contextual Info: P-CHANNEL POWER MOSFETS IRF9610/9611 FEATURES • Lower R dsion • Improved inductive ruggedness • Fast switching times • Rugged polysilicon gate cell structure • Lower input capacitance • Extended safe operating area • Improved high temperature reliability

IRF9610

Abstract: IRF961 IR 9613 IRF9612 IRF9613 F9610 IR mosfets 9611
Contextual Info: P-CHANNEL POWER MOSFETS IRF9610/9611/9612/9613 FEATURES • • • • • • • Lower Rds <o n Improved inductive ruggedness Fast switching times Rugged polysilicon gate cell structure Lower input capacitance Extended safe operating area Improved high temperature reliability

SM 9613

Abstract: 9611 IR 9613 IRF9612 IRF961
Contextual Info: P-CHANNEL POWER MOSFETS IRF9610/9611/9612/9613 FEATURES • • • • • • • Lower Rds <o n Improved inductive ruggedness Fast switching times Rugged polysilicon gate cell structure Lower input capacitance Extended safe operating area Improved high tem perature reliability

IRF7205

Abstract: IRF7342 IXTH7P50 T0-220AB BSS83 BSS84 irfp9240 IRF5210S IRFD9110 IRFD9210
Contextual Info: MHTEPTEKC ww w.i-t.su ¡nfo@ i-t.su Ten: 495 739-09-95, 644-41-29 TpaH3MCTopbi P-MOSFET copTMpoBKa no TOKy lD Kofl: BSS84 BSS92 BS250 BSS83 IRF5210S IRFD9210 IRFD9220 IRFD9110 IRFD9120 IRFD9014 BSP315P IRFD9024 IRF9610 IRFL9014 IRF9620 IRF9630 SI9953DY SI9948AEY

Contextual Info: IRF9610, SiHF9610 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating - 200 RDS(on) (Ω) VGS = - 10 V Qg (Max.) (nC) 11 Qgs (nC) 7.0 Qgd (nC) 4.0 Configuration • P-Channel 3.0 COMPLIANT • Lead (Pb)-free Available DESCRIPTION

Contextual Info: IRF9610, SiHF9610 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating - 200 RDS(on) (Ω) VGS = - 10 V Qg (Max.) (nC) 11 Qgs (nC) 7.0 Qgd (nC) 4.0 Configuration • P-Channel 3.0 RoHS* • Ease of Paralleling COMPLIANT • Simple Drive Requirements

irf9610

Abstract: irf9610pbf
Contextual Info: IRF9610, SiHF9610 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating - 200 RDS(on) (Ω) VGS = - 10 V Qg (Max.) (nC) 11 Qgs (nC) 7.0 Qgd (nC) 4.0 Configuration • P-Channel 3.0 RoHS* • Ease of Paralleling COMPLIANT • Simple Drive Requirements

IRF9610

Abstract: DATASHEET irf9610 IRF9610PBF MOSFET SiHF9610 SiHF9610-E3
Contextual Info: IRF9610, SiHF9610 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating - 200 RDS(on) (Ω) VGS = - 10 V Qg (Max.) (nC) 11 Qgs (nC) 7.0 Qgd (nC) 4.0 Configuration • P-Channel 3.0 RoHS* • Ease of Paralleling COMPLIANT • Simple Drive Requirements

IRF9610

Abstract: SiHF9610 SiHF9610-E3
Contextual Info: IRF9610, SiHF9610 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating - 200 RDS(on) (Ω) VGS = - 10 V Qg (Max.) (nC) 11 Qgs (nC) 7.0 Qgd (nC) 4.0 Configuration • P-Channel 3.0 RoHS* • Ease of Paralleling COMPLIANT • Simple Drive Requirements

IRF9610

Contextual Info: IRF9610, SiHF9610 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating - 200 RDS(on) (Ω) VGS = - 10 V Qg (Max.) (nC) 11 Qgs (nC) 7.0 Qgd (nC) 4.0 Configuration • P-Channel 3.0 RoHS* • Ease of Paralleling COMPLIANT • Simple Drive Requirements

IRF9612

Abstract: IRF9610 IRF610 complementary IRF9613 DIODE C352 IRF9611 F9613 C350H 9350e
Contextual Info: h e D I massmss ooaabOG s | Data Sheet No. PD-9.350E INTERNATIONAL R E C T I F I E R INTERNATIONAL RECTIFIER IOR HEXFET TRANSISTORS IRF9610 IRF9611 P-CHANNEL SOOVOLT DEVICES IRF9612 IRF9613 -200 Volt, 3.0 Ohm HEXFET T0-220AB Plastic Package Product Summary

Contextual Info: IRF9610, SiHF9610 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating - 200 RDS(on) (Ω) VGS = - 10 V Qg (Max.) (nC) 11 Qgs (nC) 7.0 Qgd (nC) 4.0 Configuration • P-Channel 3.0 RoHS* • Ease of Paralleling COMPLIANT • Simple Drive Requirements

irf9610 samsung

Contextual Info: SAMSUNG ELECTRONICS INC bME D • 7^b4142 0Q122bb SBQ « S M G K P-CHANNEL POWER MOSFETS IRF9610/9611 /9612/9613 FEATURES • • • • • • • Lower Rds ON Improved inductive ruggedness Fast switching times Rugged polysilicon gate cell structure Lower input capacitance

IRF9610

Abstract: SiHF9610 SiHF9610-E3
Contextual Info: IRF9610, SiHF9610 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating - 200 RDS(on) (Ω) VGS = - 10 V Qg (Max.) (nC) 11 Qgs (nC) 7.0 Qgd (nC) 4.0 Configuration • P-Channel 3.0 RoHS* • Ease of Paralleling COMPLIANT • Simple Drive Requirements

Contextual Info: IRF9610, SiHF9610 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating - 200 RDS(on) (Ω) VGS = - 10 V Qg (Max.) (nC) 11 Qgs (nC) 7.0 Qgd (nC) 4.0 Configuration • P-Channel 3.0 RoHS* • Ease of Paralleling COMPLIANT • Simple Drive Requirements

1rf9610

Abstract: IRF9610 IRF9610S ScansUX102 afra marking
Contextual Info: PD-9.350F International l»51 Rectifier IRF9610 HEXFET Power MOSFET • • • • • Dynamic dv/dt Rating P-Channel Fast Switching Ease of Paralleling Simple Drive Requirements V Ds s = - 2 0 0 V ^DS on = 3 - 0 0 ln = -1.8A Description DATA SHEETS The HEXFET technology is the key to International Rectifier’s advanced line

Contextual Info: 4Û55452 QOmabb fl?b • INR International Rectifier IRF9610 bSE J> INTER-NATIONAL RECTIFIER HEXFET Power M O S FE T • • • • • PD-9.350F Dynamic dv/dt Rating P-Channel Fast Switching Ease of Paralleling Simple Drive Requirements V pss ~ "200V R DS on =

IRF9610

Abstract: irf9610 144 irf9610 IR
Contextual Info: PD-9.350F International iraRi Rectifier IRF9610 H EXFET Power M O S F E T • • • • • Dynamic dv/dt Rating P-Channel Fast Switching Ease of Paralleling Simple Drive Requirements VDSS = -200V R DS on = 3 0 i 2 lD = -1.8A Description DATA SHEETS The H E X F E T technology is the key to International Rectifier’s advanced line

IRF740 "direct replacement"

Abstract: irf9640 REPLACEMENT GUIDE IRF9540 replacement IRF640 irf510 2Sk350 HITACHI IRF9613 rca9213a buz11 cross reference sgsp467 fu120
Contextual Info: CROSS REFERENCE GUIDE POWER MOSFETs Inter­ national Rectifier SAMSUNG Direct Replace­ ment Inter­ national Rectifier SAMSUNG Direct Replace­ ment Inter­ national Rectifier SAMSUNG Direct Replace­ ment Inter­ national Rectifier SAMSUNG Direct Replace­

IFRZ44

Abstract: IRFZ43 KA3842D irf510 switch TRANSISTOR MC7805CT KA336Z Transistor mc7812ct high voltage pnp transistor 700v IRFZ44 PNP KS82C670N
Contextual Info: PRODUCT INDEX ALPHA NUMERIC INDEX Part numbers In BOLD are preferred standard parts. PART NO. 2N3904 2N3906 2N4400 2N4401 2N4402 2N4403 2N5087 2NS088 2NS551 2N6S15 IRF510 IRF511 IRF512 IRF513 IRF520 IRF521 IRF522 IRF523 IRFS30 IRF531 IRF532 IRF533 IRF540 IRF541

IRF9511

Abstract: IRF9Z15 IRF9613 IRF9632 IRF9631 IRF9643 IRF9642 IRF9641
Contextual Info: FUNCTION GUIDE POWER MOSFETs TO-220 P-CHANNEL B Vdss V Part Number ID(onXA) RDS(onXn) -4 .0 0 -4 .7 0 -8 .9 0 -9 .8 0 -15 .0 0 -18 .0 0 0.70 0.50 0.33 0.28 0.21 0.14 IRF9Z12 IRF9Z10 IRF9Z22 IRF9Z20 IRF9Z32 IRF9Z30 - 60.00 -2 .5 0 -3 .0 0 -4 .0 0 -4 .7 0

IRF9610

Abstract: IRFP143 IRF9612 IRFP240 THOMSON DISTRIBUTOR 58e d IRFP142 IRFP141 IRFP243 THOMSON 58E THOMSON 58E CASE OUTLINE
Contextual Info: SflE D THOMSON/ DI STR IBUTOR • TnEhfl?3 0005003 ■ TCSK International SR ecB fier HEXFET Power MOSFETs Plastic Insertable Package TO-220 P-Channel Part Number Vos Drain Source Voltage Volts IRF9512 IRF9510 IRF9522 IRF9520 IRF9532 IRF9530 IRF9542 IRF9540

IRF9210

Abstract: darlington NPN 600V 8a transistor fet 10a 600v darlington NPN 600V 12a transistor transistor IRF9640 N-CH POWER MOSFET TO-92 600v 12A TO220F NPN Transistor 600V 5A TO-220 transistor irf620 KSH117-1
Contextual Info: PRODUCT INDEX FUNCTIONAL SELECTION GUIDE BIPOLAR TRANSISTOR DESCRIPTION MRTNO. 2N3904 2N3906 2N4401 2N4403 2N5087 2N5088 2N5551 2N6515 KSP06 KSP10 KSP13 KSP2222A KSP27 KSP2907A KSP42 KSP44 KSP56 KSP92 KST10-TF KST2222A-TF KST2484-TF KST2907-TF KST3904-TF KST3906-TF

Contextual Info: P-Channel MOSFET Transistors Part No. J174 J175 Drain-Source On-State Braekdown DS Current Voltage BVDSS V ID(ON)(A) 30.00 30.00 1.00 .50 Static DS Resistance Part No. RDS(ON)(Ω) 85 125 J176 J270 Drain-Source On-State Braekdown DS Current Voltage Static DS