IRF FET Search Results

2N3904 SOT-23 MARKING CODE

Abstract: TO226AA Philips TO-92 MARKING CODE BC327 NATIONAL SEMICONDUCTOR AGt marking code nte 2n3904 DALLAS SEMICONDUCTOR 2501 to-226aa BC547C SOT23 NATIONAL SEMICONDUCTOR MARKING CODE sot
Contextual Info: Transistors Manufacturer’s Code Log AGT ANA ADV AVX BNS CRY DLS Agilent Technologies Analog Devices Inc. Advanced Micro Devices AVX Bourns Crydom Company Dallas Semiconductor EPC FSC FJS GIS HVP IRF INT EPCOS Fairchild Semiconductor Fuji Semiconductor General Semiconductor

2SK1575

Contextual Info: 2SK1575 — V >J =¡ > N ? * * » MOS FET VHFíSiH o & r j y • ¡s s » PG = 13dB, r|D = 65%typ, f = 190MHz (Ta = 2 5 ^ ) m g V DSS 180 V V GSS ±20 V *D 16 A 81 Ä Pch* 200 W ^ Tch 150 °C « Tstg -5 5 ~ +150 °c * V ~ 7* M JE *t - * y - s K < 1/ ^ IrF

Contextual Info: TPAnrnilRP/l IRF I U“ UU # U D l / U D r c 2m o s d i g i t a l i n t e g r a t e d c i r c u i t SILICON MONOLITHIC T C 4 0 0 7 U B P / T C 4 0 07UBF DUAL COMPLEMENTARY PAIR PLUS INVERTER T C 4 0 0 7 U B P / U B F c o n t a i n s t h r e e e l e m e n t s of P - c h a n n e l

Equivalent IRF 44

Abstract: sony 2sj54 VN0109N3 irf 80 n BUZ44 VN0104N5 2SJ54 irf 44 n VN0108N2 VN0104N1
Contextual Info: Siliconix 1-1? f l CO CO COCO Ol o LL. U . t t ù i • ■ N M C O M «M O LL. U . IRF230 ■ IRF231 - IRF232 ■ IRF233 IRF630 ■ IRF631 - IRF632 ■ IRF633 200VMOSPOWER These power FETs are designed especially for switching regulators, power converters,

Equivalent IRF 44

Abstract: irf630 vn0106n5 VN46 VN0108N2 BUZ44 IRF232 IRF240 IRF422 IRF522
Contextual Info: Siliconix 1-1? f l Pin© MOSPOWER Selector Guide Continued N-Channc4 MOSPOWER (Continued) jopeies aaMOdSOW Device T0-220AB /o V T0-202AA C— IIlt~\1 /// 1 1 TO-39 1-6 Breakdown Voltage (Volts) rDS(on} (Ohms) Continuous (Amps) 200 200 200 200 200 200 170

irf 630

Abstract: AAIJ IRF420 IRF422 IRF430 IRF432 IRF440 IRF442 IRF450 IRF452
Contextual Info: !R Selector Guide ] MOSPOWER Selector Guide B Siliconix N-Channel MOSPOWER Device u TO-3 Breakdown Voltage Volts 500 500 500 500 500 500 500 500 500 500 500 450 450 450 450 450 450 450 450 450 450 450 400 400 400 400 400 400 400 400 400 400 400 350 350 350

irf 630

Abstract: ALL IRF 3.335t irf630 IRF620 IRF622 IRF631 IRF632 vn89af IRF640
Contextual Info: Pin© jopeies aaMOdSOW MOSPOWER Selector Guide Continued N-Channc4 MOSPOWER (Continued) Device T0-220AB /o V T0-202AA C— IIlt~\1 /// 1 1 TO-39 1-6 Breakdown Voltage (Volts) rDS(on} (Ohms) Continuous (Amps) 200 200 200 200 200 200 170 150 150 150 150

VN64GA

Abstract: IRF733 2N6658 IRF120 IRF122 IRF130 IRF132 IRF140 IRF142 IRF150
Contextual Info: MOSPOWER Selector Guide MOSPOWER Selector Guide continued N-Channel MOSPOWER (Continued) Device FiC ^ T ' u TO-3 TO-22QAB Breakdown Voltage (Volts) rDS(on) (Ohms) >d Continuous (Amps) Power Dissipation (Watts) 100 100 100 100 100 100 100 100 100 100 90 90

ir 222

Abstract: IRF620 IRF622 IRF630 IRF631 IRF632 IRF633 IRF640 IRF641 IRF642
Contextual Info: Pin© jopeies aaMOdSOW MOSPOWER Selector Guide Continued N-Channc4 MOSPOWER (Continued) Device T0-220AB /o V T0-202AA C— IIlt~\1 /// 1 1 TO-39 1-6 Breakdown Voltage (Volts) rDS(on} (Ohms) Continuous (Amps) 200 200 200 200 200 200 170 150 150 150 150

irf 150 equivalent

Abstract: 2sk135 equivalent hitachi 2sk135 irf150 2SK134 equivalent irf 111 irf120 IRF351 IRF331 2SK132
Contextual Info: MOSPOWER Cross Reference List MOSPOWER Cross Reference List HEWLETT-PACKARD Industry Part No. HPWR-6501 HPWR-6502 HPWR-6503 HPWR-6504 BVd s S Volts rDS(on) (Ohms) Package 450 400 450 400 0.85 0.74 1.0 1.0 TO-3 TO -3 TO-3 TO-3 100 120 140 160 180 200 160

diode U3j

Abstract: IRf 447 MOSFET 1RF530 1rf5305 a7x transistor IRF532 MOSFET IRF 531 motorola diode u3j aaBO ON U3J
Contextual Info: MOTOROLA SC MOTOROLA XST RS/R F IM E D I b3b?aSM O OÔ ÎbôS 4 IRF530 1RF531 IRF532 IRF533 •I SEM ICONDUCTOR TECHNICAL DATA N-CHANNEL ENHANCEMENT-MODE SILICON GATE TM OS POWER FIELD EFFECT TRANSISTOR These T M O S Pow er FETs are d esign ed for low voltage, high

IRF420

Abstract: IRF422 IRF430 IRF432 IRF440 IRF442 IRF450 IRF452 VN5001A VN5002A
Contextual Info: !R Selector Guide ] MOSPOWER Selector Guide B S ilic o n ix N-Channel MOSPOWER Device u TO-3 Breakdown Voltage Volts 500 500 500 500 500 500 500 500 500 500 500 450 450 450 450 450 450 450 450 450 450 450 400 400 400 400 400 400 400 400 400 400 400 350 350

MD8404

Abstract: irf 648 8412b IEEE1212 MD8402 MD8412B P1394 IRF 534
Contextual Info: LINK IEEE 1394 MD8412B User's Manual FUJIFILM MICRODEVICES CO., LTD Ver 1.10 MEMO MD8412B History Revision 1.10 Ver 1.10 Date 6/17/99 Modified First revision of English manual. FUJIFUILM MICRODEVICES CO., LTD. i MD8412B Keys: MSB, LSB of data : MSB on the right and LBS on the left

MD8402

Abstract: IRF 5310 MD8412 MD8402 equivalent irf 648 MD8413 010B IEEE1212 P1394
Contextual Info: LINK IEEE 1394 MD8412 Users Manual PRELIMINARY FUJIFILM MICRODEVICES CO., LTD. Ver0.92 MEMO Preliminary MD8412 History Revision 0.92 Ver 0.92 Date Contents 1996.12.03 Original FUJIFILM Microdevices Co., Ltd. i MD8412 Preliminary MEMO ii FUJIFILM Microdevices Co., Ltd.

transistor irf 647

Abstract: transistor IRF 531 transistor irf 064 irf 570 p570
Contextual Info: MOTOROLA IRF530 IRF531 IRF532 IRFS33 SEMICONDUCTOR TECHNICAL DATA N-CHANNEL ENHANCEMENT-MODE SILICON GATE TMOS POWER FIELD EFFECT TRANSISTOR These T M O S Power FETs are designed for low voltage, high speed power switching applications such as switching regulators,

CXD2073S

Abstract: th327
Contextual Info: CXD2073S Digital Comb Filter NTSC For the availability of this product, please contact the sales office. Description The CXD2073S is an adaptive comb filter compatible with NTSC system, and provide high-precision Y/C separation with a single chip. Features

IRF9232

Abstract: IRF9523 IRFF121 IRF9130 IRF9131 IRF9132 IRF9133 IRF9230 IRF9231 IRF9233
Contextual Info: 1-15 MOSPOWER Cross Reference Ust CO GO o> *1 0 2 . I I ! Í I ! !! I ! [ I I I ! I I I I I I U I I I I I ¡I i II I I I i i II ¡ ¡ I II I i I ¡ N I I I M M I I I I I I I I II II I CO >% ID â % «éJ d o c 2 <1) a> I I I Il I I I I I I I I II I I I I I I I

CXD2073Q

Abstract: 32PIN QFP032-P-0707
Contextual Info: CXD2073Q Digital Comb Filter NTSC For the availability of this product, please contact the sales office. Description The CXD2073Q is an adaptive comb filter compatible with NTSC system, and provide high-precision Y/C separation with a single chip. Features

2SK132

Abstract: 2SK133 HPWR-6502 HPWR-6503 HPWR-6504 IRF122 IRF223 IRF340 IRF441 VN4001A
Contextual Info: MOSPOWER Cross Reference List MOSPOWER Cross Reference List HEWLETT-PACKARD Industry Part No. HPWR-6501 HPWR-6502 HPWR-6503 HPWR-6504 BVd s S Volts rDS(on) (Ohms) Package 450 400 450 400 0.85 0.74 1.0 1.0 TO-3 TO -3 TO-3 TO-3 100 120 140 160 180 200 160

irf 80 n

Abstract: irf 30A IRF340 IRF350 IRF440 IRF450 IRF740 IRF820 IRF840 VNP002A
Contextual Info: Ü Ü A C D ^ U /C D M i v i a D r /\W i iv iv ^ i v T T k iv r i i i i i v t iv u v iw i C A lA A ^ /\r f^ .n \M é g ^ i^ v iv i w u iv i^ 1-2 MOSPOWER Prime Product Selector Guide *2 0 0 °C RATING I i Packages: BV qss Volts 4 5 0 -5 0 0 TO-3 TO-220 S ilic o n ix

irf630 equivalent

Abstract: MTM5N40 IVN6100TNU VN2410L "cross reference" MTM3N55 IRF533 IVN6200CND IVN6200CNE irf 150 equivalent IVN6200CNH
Contextual Info: 1-17 MOSPOWER Cross Reference List c « s s <0J= g i n i n m i n • - CM CM CM ^ I m iD lO m • 'd d d o d ' r r r ' s 1o o o o o | I O O I I I P I I I | I I j j CO00 COCO j j ' I I I I OOOO ' ' I I o o r i mm | ioom m I L -^ ^ l ' < O Ò ' ' ' lO ' ' ' ' '

irf630 equivalent

Abstract: irf630 irf640 irf630 mtm5n35 MTM5N40 IRF533 IVN6100TNU IVN6200CND IVN6200CNE IVN6200CNF
Contextual Info: 1-17 MOSPOWER Cross Reference List c « g s s <0J= P fi c i n i n m i n • - CM CM CM ^ • 'd d d o d 1o o o o o I m iD lO m | ' r r r ' s ' I O O < O Ò I I I I I | ' ' ' lO ' I P ' ' ' ' I I j j CO00 COCO j j ' I o o r i mm | ioom m I L -^ ^ l I c\i CM i

Contextual Info: C A I D I —111 O June 1997 PRELIMINARY SEM ICONDUCTO R tm FDC6301N Dual N-Channel , Digital FET General Description Features These dual N-Channel logic level enhancement mode field effect transistors are produced using Fairchild 's proprietary, high cell density, DMOS technology. This very high density

IRF730 equivalent

Abstract: IRF730 equivalent data IRF330 IRF9523 IRF9613 IRFF121 IRF9130 IRF9131 irf 730 IRF9133
Contextual Info: 1-15 MOSPOWER Cross Reference Ust CO GO o> *1 02. I I ! Í I ! !! I ! [ I I I ! I I I I I I U I I I I I ¡I i II I I I i i II ¡ ¡ I II I i I ¡ N I I I M M I I I I I I I I II II I CO >% ID â % «é J d o c 2 <1) a> I I I I l I I I I I I I I II I I I I I I I