IRF 80 N Search Results

ortec 457

Contextual Info: MICROCHANNEL PLATEPHOTOMULTIPLIER TUBE MCP-PMT R3809U-61/-63/-64 FEATURES ●High Sensitivity QE: 12 % (-61), 36 % (-63), 40 % (-64) ●High Speed Rise Time: 200 ps (-61), 180 ps (-63/-64) IRF A (Instrument Response Function): 150 ps at FWHM: (-61) 80 ps at FWHM: (-63/-64)

IRF 501

Abstract: IRF500N IRF500NC irf 260 IRF 530 125mm2 200NC W103 irf 150 irf free
Contextual Info: POWER 06.2002 PCN RESISTORS MAX. 500W TOL. 0.5% TC. 260ppm/ ЊC IRF FLAT TYPE METAL CLAD WIRE-WOUND RESISTORS Winding Method : Non Inductive Winding Type Wattage Rating Chassis Mounted W Resistance Range (V) IRF 100 NC 100 1ϳ560 Resistance Tolerance (%)

uln2503

Abstract: irf250 datasheet METAL-CLAD Wire wound resistors 1000v 200w Transistor ULN400 rara irn W203 ULN200 transistor irf250 IRF 024
Contextual Info: Resistors And Resistive Applications IRN, ULN, IRF, ULF SLIM PROFILE WIRE WOUND, METAL CLAD RESISTORS The IRN N=narrow and flat & IRF(F=flat) models are metal-clad, wire-wound, high-power, extremely low inductance resistors designed for industrial and other applications where space is at a premium and performance is a must. The ULN and

IRF 740 N

Abstract: IRF 748 n irf 751 IRF 745 R BUZ90 irfz irf 740 BUZ91A IRFZ34 IRFZ40
Contextual Info: ПОЛУПРОВОДНИКОВЫЕ ПРИБОРЫ Транзисторы •Мощные полевые n-канальные транзисторы Обозначен ие КП723А КП723Б КП723В КП726А КП726Б КП727А КП727Б КП728Г1 КП728Е1

Equivalent IRF 44

Abstract: irf630 vn0106n5 VN46 VN0108N2 BUZ44 IRF232 IRF240 IRF422 IRF522
Contextual Info: Siliconix 1-1? f l Pin© MOSPOWER Selector Guide Continued N-Channc4 MOSPOWER (Continued) jopeies aaMOdSOW Device T0-220AB /o V T0-202AA C— IIlt~\1 /// 1 1 TO-39 1-6 Breakdown Voltage (Volts) rDS(on} (Ohms) Continuous (Amps) 200 200 200 200 200 200 170

irf 630

Abstract: ALL IRF 3.335t irf630 IRF620 IRF622 IRF631 IRF632 vn89af IRF640
Contextual Info: Pin© jopeies aaMOdSOW MOSPOWER Selector Guide Continued N-Channc4 MOSPOWER (Continued) Device T0-220AB /o V T0-202AA C— IIlt~\1 /// 1 1 TO-39 1-6 Breakdown Voltage (Volts) rDS(on} (Ohms) Continuous (Amps) 200 200 200 200 200 200 170 150 150 150 150

ir 222

Abstract: IRF620 IRF622 IRF630 IRF631 IRF632 IRF633 IRF640 IRF641 IRF642
Contextual Info: Pin© jopeies aaMOdSOW MOSPOWER Selector Guide Continued N-Channc4 MOSPOWER (Continued) Device T0-220AB /o V T0-202AA C— IIlt~\1 /// 1 1 TO-39 1-6 Breakdown Voltage (Volts) rDS(on} (Ohms) Continuous (Amps) 200 200 200 200 200 200 170 150 150 150 150

IRF 1640

Abstract: GD4049B IRF 1640 G GAL16V8-20LNC gal22cv10 HA2-2725-5 HA2-2655-5 HA2-2650-2 irf 2030 GAL22CV10-10LVC
Contextual Info: • M fr Qty/Note 7 A0 D3 M5 000035fl ITS ■ Part Num ber M fr Qty/Note Part Num ber Mfr SM C 6658 GAL20V8QS-10LV! NSC 1995 HA1-2541-7 H AR 460 SMC 13390 GAL20V8QS-15LNC NSC 15169 HA1-2541/883 H AR 387 SMC 401 GAL20V8QS-15LVC NSC 1031 HA1-2655-5 H AR 210

Contextual Info: 30E D • 7 ^ 2 3 7 □ □ 2 ì ? 4 3 □ ■ H ~ : 3 CI - I 3 Æ 7 S C S -T H O M S O N IRF 140 -141 RMD ia@i[Lli(gTOIRgo©l_ IRF 142 - 143 S 6 S-THOMSON • • • • n - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS TYPE V DSS ^DS(on •d

Equivalent IRF 44

Abstract: sony 2sj54 VN0109N3 irf 80 n BUZ44 VN0104N5 2SJ54 irf 44 n VN0108N2 VN0104N1
Contextual Info: Siliconix 1-1? f l CO CO COCO Ol o LL. U . t t ù i • ■ N M C O M «M O LL. U . IRF230 ■ IRF231 - IRF232 ■ IRF233 IRF630 ■ IRF631 - IRF632 ■ IRF633 200VMOSPOWER These power FETs are designed especially for switching regulators, power converters,

VN64GA

Abstract: IRF733 2N6658 IRF120 IRF122 IRF130 IRF132 IRF140 IRF142 IRF150
Contextual Info: MOSPOWER Selector Guide MOSPOWER Selector Guide continued N-Channel MOSPOWER (Continued) Device FiC ^ T ' u TO-3 TO-22QAB Breakdown Voltage (Volts) rDS(on) (Ohms) >d Continuous (Amps) Power Dissipation (Watts) 100 100 100 100 100 100 100 100 100 100 90 90

irf440

Contextual Info: IOR IRF Series Devices IRF Series Data Sheet T h e IR F D a ta S h e e t d e s c rib e s 32 d e v ic e s , 28 N -C h a n n e l a n d 4 P -C h a n n e l, a ll c o n ta in e d in th e T O -2 Û 4 A A o r T 0 - 2 0 4 A E p a c k a g e . T h is d a ta s h e e t

irf 630

Abstract: AAIJ IRF420 IRF422 IRF430 IRF432 IRF440 IRF442 IRF450 IRF452
Contextual Info: !R Selector Guide ] MOSPOWER Selector Guide B Siliconix N-Channel MOSPOWER Device u TO-3 Breakdown Voltage Volts 500 500 500 500 500 500 500 500 500 500 500 450 450 450 450 450 450 450 450 450 450 450 400 400 400 400 400 400 400 400 400 400 400 350 350 350

IRF420

Abstract: IRF422 IRF430 IRF432 IRF440 IRF442 IRF450 IRF452 VN5001A VN5002A
Contextual Info: !R Selector Guide ] MOSPOWER Selector Guide B S ilic o n ix N-Channel MOSPOWER Device u TO-3 Breakdown Voltage Volts 500 500 500 500 500 500 500 500 500 500 500 450 450 450 450 450 450 450 450 450 450 450 400 400 400 400 400 400 400 400 400 400 400 350 350

TO-213AA

Abstract: TO213AA IRFJ221 IRFJ130 IRFJ132 IRFJ133 IRFJ141 IRFJ142 IRFJ143 IRFJ13I
Contextual Info: - 261 S! i± £ f H t V ds € A £ Vgs Ta=25'C Id Pd ffi I gss Vgs th ) I dss or * /CH * /CH (A) (W) V gs (V) ft 'ft Ds(on) Vd s = (Ta=25“C ) I d (on) C is s g fs Coss C rss (V) (nA) (V) ( m a) V ds (V) min max (V) (V) (raa?r) Id ( thA) 5* fc m n VGs=0

irf630 equivalent

Abstract: irf630 irf640 irf630 mtm5n35 MTM5N40 IRF533 IVN6100TNU IVN6200CND IVN6200CNE IVN6200CNF
Contextual Info: 1-17 MOSPOWER Cross Reference List c « g s s <0J= P fi c i n i n m i n • - CM CM CM ^ • 'd d d o d 1o o o o o I m iD lO m | ' r r r ' s ' I O O < O Ò I I I I I | ' ' ' lO ' I P ' ' ' ' I I j j CO00 COCO j j ' I o o r i mm | ioom m I L -^ ^ l I c\i CM i

IRF9232

Abstract: IRF9523 IRFF121 IRF9130 IRF9131 IRF9132 IRF9133 IRF9230 IRF9231 IRF9233
Contextual Info: 1-15 MOSPOWER Cross Reference Ust CO GO o> *1 0 2 . I I ! Í I ! !! I ! [ I I I ! I I I I I I U I I I I I ¡I i II I I I i i II ¡ ¡ I II I i I ¡ N I I I M M I I I I I I I I II II I CO >% ID â % «éJ d o c 2 <1) a> I I I Il I I I I I I I I II I I I I I I I

IRF822FI

Abstract: IRF820FI IRF822 irf 460 IRF 820 ATI 216 irf822f IRF820 GC522 0G145
Contextual Info: 7^ 2^ 5 3 7 0 G M 5 7 0 0 0^2 • SGTH _ SGS-THOMSON IRF820FI IRF822/FI N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS TYPE V dss RDS on Id IRF820 IRF820FI 500 V 500 V <3ß < 3 fì 3 A 2.2 A IRF822 IRF822FI 500 V 500 V <4Ü <4 n 2.8 A

Contextual Info: 7^2^537 0GM5700 0^2 • SGTH _ SGS-THOMSON IRF820FI IRF822/FI N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS TYPE V dss RDS on Id IRF820 IRF820FI 500 V 500 V < 3 n < 3 n 3 A IRF822 IRF822FI 500 V 500 V <4Q < 4 n ■ ■ ■ ■

2SK132

Abstract: 2SK133 HPWR-6502 HPWR-6503 HPWR-6504 IRF122 IRF223 IRF340 IRF441 VN4001A
Contextual Info: MOSPOWER Cross Reference List MOSPOWER Cross Reference List HEWLETT-PACKARD Industry Part No. HPWR-6501 HPWR-6502 HPWR-6503 HPWR-6504 BVd s S Volts rDS(on) (Ohms) Package 450 400 450 400 0.85 0.74 1.0 1.0 TO-3 TO -3 TO-3 TO-3 100 120 140 160 180 200 160

transistor sta 733

Abstract: IRF 730 TRANSISTOR IRF 318 J CL66 irf 80 n Ultrasonic power generator schematic irf transistors IRF730FI 730 mos IRF732
Contextual Info: 30E D m 7 ^ 2 3 7 OD2T7*iS a_• | / T 7 S GS-THOM SO N IRF 730/FI-731/FI 4 T /W[ « [ I » ! « ! _ IRF 732/FI-733/FI 1 6 S-THOMSON TYPE V DSS IRF730 IRF730FI IRF731 IRF731FI IRF732 IRF732FI IRF733 IRF733FI 400 V 400 V 350 V 350 V 400 V 400 V 350 V

D0217

Abstract: IRFP 620 IRF622 application FZJ 111 irf 44 n FZJ 101 transistor irf620 pj62 IRF620 IRF621
Contextual Info: 3GE » • 7^23? 002=1703 1 ■ ' T v3P|- [ S G S -T H O M S O N * 7 # [ * œ Œ ( g r a [ i * § r= IR F 6 2 0 / F I - 6 2 1 /F I IR F 6 2 2 / F I - 6 2 3 /F I Z S G S-thomJoF TYPE N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS V DSS 200 V 200 V ^DS(on

IRF730 equivalent

Abstract: IRF730 equivalent data IRF330 IRF9523 IRF9613 IRFF121 IRF9130 IRF9131 irf 730 IRF9133
Contextual Info: 1-15 MOSPOWER Cross Reference Ust CO GO o> *1 02. I I ! Í I ! !! I ! [ I I I ! I I I I I I U I I I I I ¡I i II I I I i i II ¡ ¡ I II I i I ¡ N I I I M M I I I I I I I I II II I CO >% ID â % «é J d o c 2 <1) a> I I I I l I I I I I I I I II I I I I I I I

BF 331 TRANSISTORS

Abstract: ibf830 SD 336 IRf 334 MOS 3020 application note using irf 830 rf830 BF 830 transistor transistor maw CJ135
Contextual Info: 30E D rzj S • 7^237 SCS-THOMSON G s^THÖMSoF TYPE IRF830 IRF830FI IRF831 IRF831FI IRF832 IRF832FI IRF833 , IRF833FI QG2Sßl3 b ■ VDSS 500 V 500 V 450 V 450 V 500 V 500 V 450 V 450 V N ^DS on 1.5 n 1.5 n 1.5 n 1.5 ß 2.0 Q 2.0 fl 2.0 Q 2.0 a - ( _