GAL16VB Search Results

GAL16VB

Abstract: National SEMICONDUCTOR GAL16V8 GAL16V8 application notes GAL16v8 algorithm
Contextual Info: GAL16V8 National Semiconductor GAL16V8 Generic Array Logic General Description Features The NSC E2CMOS GAL device combines a high per­ formance CMOS process with electrically erasable floating gate technology. This programmable memory technology applied to array logic provides designers with reconfigurable

Contextual Info: G A L 1 6 V 8 iilL a ttice • High Performance E2CMOS PLD Generic Array Logic Semiconductor Corporation FUNCTIONAL BLOCK DIAGRAM FEATURES • HIGH PERFORMANCE E2CMOS TECHNOLOGY — 5 ns Maximum Propagation Delay — Fmax = 166 MHz — 4 ns Maximum from Clock Input to Data Output

Contextual Info: GAL16V8A-10, -12, -15, -20 National Semiconductor GAL16V8A-10, -12, -15, -20 Generic Array Logic General Description Features The NSC E2CMOS GAL device combines a high per­ formance CMOS process with electrically erasable floating gate technology. This programmable memory technology

16V8A

Abstract: GAL16VB
Contextual Info: Lattice GALI 6V8B/883 GALI 6V8A/883 High Performance E2CMOS PLD F U N C T IO N A L B L O C K D IA G R A M FE A T U R E S • HIGH PERFORMANCE E*CMOS* TECHNOLOGY — 10 na Maximum Propagation Delay — Fmax = 62.5 MHz — 7 n* Maximum from Clock Input to Data Output

Gal16V8B-30LD

Abstract: 16v8b 6V8C GAL16VBB-10
Contextual Info: Lattice G A L 1 6 V 8 /8 8 3 High Performance E2CMOS PLD Generic Array Logic , J Semiconductor i • Corporation FU N CTIONAL B LO C K DIAGRAM FEATURES • HIGH PERFORMANCE E2C M O S* TECHNOLOG Y — 7.5 ns Maxim um Propagation Delay — Fmax = 1 0 0 MHz

c5088 transistor

Abstract: transistor C3207 TLO84CN sec c5088 IN5355B D2817A C3207 transistor toshiba f630 TLO81CP MC74HC533N
Contextual Info: Transistor - Diode Cross Reference - H.P. Part Numbers to JEDEC Numbers Part Num. 1820-0225 1820-0240 1820-0352 1820-1804 1821-0001 1821-0002 1821-0006 1850-0062 1850-0064 1850-0075 1850-0076 1850-0093 1850-0099 1850-0126 1850-0137 1850-0150 1850-0151 1850-0154

GAL16VBB

Abstract: gal16vba GAL16VB GAL16V8A-15LP GAL16V8A-25 GAL16VBB-10U ACO-21 AX311 GAL16V8A
Contextual Info: Lattice G A L 1 6 V 8 B G A L 1 6 V 8 A High Performance E2CMOS PLD •■■■■■ FEATURES F U N C T IO N A L B L O C K D IA G R A M • HIGH PERFORMANCE E*CMOS* TECHNOLOGY — 7.5 ns Maximum Propagation Delay — Fmax ■ 100 MHz — 5 ns Maximum from Clock Input to Data Output

16V8A

Abstract: GAL16V8A GAL programmer schematic 200a liu GAL16VB GAL16VBB aco iad 16v8 16v8b GAL16V8B
Contextual Info: LATTICE SEMICONDUCTOR M7E Lattice D • S a ô b ^ Q00n32 2 HLAT G AL16V8B T-M -l< -01 G A L 1 6 V 8 A High Performance E2CMOS PLD FUNCTIONAL BLOCK DIAGRAM FEATURES >HIGH PERFORMANCE E*CMOS° TECHNOLOGY — 7.5 ns Maximum Propagation Delay — Fmax =100 MHz

6V8A

Abstract: 16v8a GALI6V8B GAL16V8A-15LR tg 5361 5962-8983902RA 5304 smd 8 pin 5962-8983904RA 5962-8983903RA
Contextual Info: L A T T IC E S E M I C O N D U C T O R 5 3 ô b T 4 T GGOEGTfi 1 « L A T 47E D Lattice GAL16V8B/883 GAL16V8A/883 T -w é -n -o i FEATURES High Performance E2CMOS PLD FUNCTIONAL BLOCK DIAGRAM • HIGH PERFO RM ANCE E*CMOS* TECHNOLOGY — 10 ns Maximum Propagation Delay