GAL16VBA Search Results

Contextual Info: GAL16V8A-10, -12, -15, -20 National Semiconductor GAL16V8A-10, -12, -15, -20 Generic Array Logic General Description Features The NSC E2CMOS GAL device combines a high per­ formance CMOS process with electrically erasable floating gate technology. This programmable memory technology

c5088 transistor

Abstract: transistor C3207 TLO84CN sec c5088 IN5355B D2817A C3207 transistor toshiba f630 TLO81CP MC74HC533N
Contextual Info: Transistor - Diode Cross Reference - H.P. Part Numbers to JEDEC Numbers Part Num. 1820-0225 1820-0240 1820-0352 1820-1804 1821-0001 1821-0002 1821-0006 1850-0062 1850-0064 1850-0075 1850-0076 1850-0093 1850-0099 1850-0126 1850-0137 1850-0150 1850-0151 1850-0154

GAL16VBB

Abstract: gal16vba GAL16VB GAL16V8A-15LP GAL16V8A-25 GAL16VBB-10U ACO-21 AX311 GAL16V8A
Contextual Info: Lattice G A L 1 6 V 8 B G A L 1 6 V 8 A High Performance E2CMOS PLD •■■■■■ FEATURES F U N C T IO N A L B L O C K D IA G R A M • HIGH PERFORMANCE E*CMOS* TECHNOLOGY — 7.5 ns Maximum Propagation Delay — Fmax ■ 100 MHz — 5 ns Maximum from Clock Input to Data Output

6V8A

Abstract: 16v8a GALI6V8B GAL16V8A-15LR tg 5361 5962-8983902RA 5304 smd 8 pin 5962-8983904RA 5962-8983903RA
Contextual Info: L A T T IC E S E M I C O N D U C T O R 5 3 ô b T 4 T GGOEGTfi 1 « L A T 47E D Lattice GAL16V8B/883 GAL16V8A/883 T -w é -n -o i FEATURES High Performance E2CMOS PLD FUNCTIONAL BLOCK DIAGRAM • HIGH PERFO RM ANCE E*CMOS* TECHNOLOGY — 10 ns Maximum Propagation Delay