IR2130D Search Results

Contextual Info: PD-60022C IR2130D 3-PHASE DRIVER Features n Hermetic n Floating channel designed for bootstrap operation n n n n n n Fully operational to +400V Tolerant to negative transient voltage dV/dt immune Gate drive supply range from 10 to 20V Undervoltage lockout for all channels

AN ir2130

Contextual Info: PD-60022D IR2130D 3-PHASE DRIVER Features n Hermetic n Floating channel designed for bootstrap operation n n n n n n Fully operational to +400V Tolerant to negative transient voltage dV/dt immune Gate drive supply range from 10 to 20V Undervoltage lockout for all channels

ir2130 application

Abstract: Drive circuit for IGBT using IR2130 power supply IRF830 APPLICATION pulse amplifier measurement IR2130D 4.1 amplifier circuit diagram application IR2130 high voltage diodes irf840 power supply Mosfet driver IR2130
Contextual Info: Data Sheet No. PD-6.022A IR2130D 3-PHASE BRIDGE Features nHermetic nFloatingchanneldesignedforbootstrap operation Fully operational to +400V Tolerant to negative transient voltage dV/dt immune n Gate drive supply range from 10 to 20V n Undervoltage lockout for all channels

Contextual Info: Data Sheet No. PDh5.022A International I R Rectifier IR2130D 3-PHASE BRIDGE Features •Hermetic ■Floatingchanneldesignedforbootstrap operation Fully operational to +400V Tolerant to negative transient voltage dV/dt immune ■ Gate drive supply range from 10 to 20V

IRFB40

Contextual Info: Data Sheet No. P06.022A International I R Rectifier IR2130D 3-PHASE BRIDGE Features •Herm etic ■Floatingchanneldesignedforbootstrap Product Summary operation ■ ■ ■ ■ ■ VOFFSET 400V max. lo+/- 200 mA / 420 mA VOUT 1 0 -20V ton/off typ. 675 & 425 ns

f 630

Abstract: f630ns IR2130D f630
Contextual Info: Other Products from IR Government and Space PICs IR2130D High Voltage Three Phase MOS Gate Driver FEATURES FUNC TIONAL BLOCK DIAGRAM • High voltage 600V operation Output driver designed to drive MOS-gated power devices — Output drive of 250mA/500mA typical source/

IR2130D

Abstract: 81 221
Contextual Info: IR2130D Case Outline and dimensions 28 Pin Dip Package Conforms to JEDEC Outline MO-038AB WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, Tel: 310 322 3331 EUROPEAN HEADQUARTERS: Hurst Green, Oxted, Surrey RH8 9BB, UK Tel: + 44 1883 732020

mosfet IRF450

Abstract: CA50 IR2130 IR2130D IRF450 IRF820 IRF830 IRF840 MO-038
Contextual Info: PD-60022B IR2130D 3-PHASE DRIVER Features n Hermetic n Floatingchanneldesignedforbootstrap n n n n n n operation Fully operational to +400V Tolerant to negative transient voltage dV/dt immune Gate drive supply range from 10 to 20V Undervoltage lockout for all channels

Contextual Info: PD-60022D IR2130D 3-PHASE DRIVER Features n Hermetic n Floating channel designed for bootstrap operation n n n n n n Product Summary Fully operational to +400V Tolerant to negative transient voltage dV/dt immune Gate drive supply range from 10 to 20V Undervoltage lockout for all channels

IRF460

Abstract: SMD TRANSISTOR MARKING k38 smd transistor k38 we 751002 s SMD-6C transistor smd k45 RAD-HARD igbt IRF3504 afl2805s manufactured by international rectifier 550-065
Contextual Info: Aerospace and Defense Products Short Form Catalog 2007 Welcome to the Aerospace and Defense Products Short Form Catalog. Inside is an overview of our product line including product specific information. To learn more, visit our web site at irf.com where you will find technical documents, data sheets for all products, application notes, design tips, technical papers, application-specific information,

irf5n5210sc

Abstract: IRHNA57064SCS IRHM597260 irf5n5210 irhna597160scs irhf7110scs IRHG57110 IRHNA57264SESCS 35CLQ045SCS 12CLQ150SCS
Contextual Info: PD - 94246A IRHG567110 RADIATION HARDENED 100V, Combination 2N-2P-CHANNEL RAD-Hard HEXFET POWER MOSFET 4# TECHNOLOGY THRU-HOLE MO-036AB Product Summary Part Number IRHG567110 IRHG563110 IRHG567110 IRHG563110 Radiation Level RDS(on) 100K Rads (Si)

IRGAC50

Abstract: MO036AA IRGAC50U IRGAC50F
Contextual Info: HU m saa In t e r n a t i o n a l R e c t i f i e r Government and Space Products Control Integrated Circuits Vs Offset Supply Voltage Volts PMt Number Fax-onDemand Number lOUT VBS.VCC SupplyVoltage (Volts) Slnk, Source (Amps) Case Style, (CaseOutline) (1)

el 847

Abstract: smd schottky diode s4 85a Diode smd s6 85a marking CODE R SMD DIODE SMB J 36 CA fast recovery diode t3d 54 fast recovery diode t3d 67 IR2113 FULL BRIDGE smd diode code k34 smd diode schottky code marking SJ diode smd marking code M12
Contextual Info: I I n t e r n a t io n a l Rec tifie r Case Outlines Bridges 140 0311} 110 0311) B1 (0.212) ¡Ö24Öj 113(0 ttO) 7 IIP » ) S.MfO.217) UO0.1M) 110(001* Case style D-70 B2 «400 Ml) I.W JIH 140(0 252) 0 30*012) 11.20(0441) • to (0.240) 3 W (P 1 2 2 ) I I— j

10RIA10

Abstract: HFA40HF120 irfm9034 10RIA100 10RIA120 10RIA20 10RIA40 10RIA60 JANSR2N7261 70HF
Contextual Info: Index International Rectifier Government and Space Products Level of Quality Part Number Rectifiers Voltage Current CECC Issue Issue Assessment and CECC V (A) Specs Number Date 50 000 Screen Level Options Fax-on-Demand CECC-Qualifed, Europe Mfg. in Italy

2N6764 JANTX

Abstract: 91447 IR2113L
Contextual Info: Government / Space Products Catalog of Available Documents Revised 5/11/99 www.irf.com IR ProCenter Fax-On-Demand 310 252-7100  Radiation-Hardened HEXFET Description Datasheets IRH7054 IRH7130 IRH7150 IRH7230 IRH7250 IRH7250SE IRHF7330SE IRHF7430SE IRH7450

f630ns

Abstract: f630 f 630
Contextual Info: International Government and Space PICs liöRlRectifier IR 2 13 0 D High Voltage Three Phase MOS Gate Driver F U N C T IO N A L B LO C K D IA G R A M FEATU R ES • High voltage 600V operation Output driver designed to drive MOS-gated power devices — Output drive of 250mA/500mA typical source/

2N6782 JANTX

Abstract: 2N6758 JANTX 2N6756 JANTX 2N6766 JANTX 2N6792 JANTX 2N6796U 60022 2N7236 2n6806 jantx 2N6770 JANTX
Contextual Info: Government / Space Products Catalog of Available Documents Revised 8/27/98 www.irf.com IR ProCenter Fax-On-Demand 310 252-7100  Radiation-Hardened HEXFET Document # Pages Date IRH7054 90883 5 Oct-96 IRH7150 90677 13 Oct-96 IRH7250 90697 13 Oct-96 IRH7450SE

IRHNJ597230SCS

Abstract: international rectifier SMD 30CLJQ100SCS IRHNJ597034SCS IRHG6110SCS IRHNJ57234SESCS IRFE130SCX 35CLQ045SCS IRHNJ597130SCS IRHNJ7430SESCS
Contextual Info: PD - 94047A RADIATION HARDENED POWER MOSFET SURFACE MOUNT SMD-0.5 IRHNJ597130 100V, P-CHANNEL 4# TECHNOLOGY c Product Summary Part Number Radiation Level IRHNJ597130 100K Rads (Si) IRHNJ593130 300K Rads (Si) RDS(on) ID 0.205Ω -12.5A 0.205Ω -12.5A SMD-0.5