MO038AB Search Results

IRF460

Abstract: SMD TRANSISTOR MARKING k38 smd transistor k38 we 751002 s SMD-6C transistor smd k45 RAD-HARD igbt IRF3504 afl2805s manufactured by international rectifier 550-065
Contextual Info: Aerospace and Defense Products Short Form Catalog 2007 Welcome to the Aerospace and Defense Products Short Form Catalog. Inside is an overview of our product line including product specific information. To learn more, visit our web site at irf.com where you will find technical documents, data sheets for all products, application notes, design tips, technical papers, application-specific information,

Contextual Info: Case Outline and Dimensions - MO-038AB

Contextual Info: PD-60022C IR2130D 3-PHASE DRIVER Features n Hermetic n Floating channel designed for bootstrap operation n n n n n n Fully operational to +400V Tolerant to negative transient voltage dV/dt immune Gate drive supply range from 10 to 20V Undervoltage lockout for all channels

AN ir2130

Contextual Info: PD-60022D IR2130D 3-PHASE DRIVER Features n Hermetic n Floating channel designed for bootstrap operation n n n n n n Fully operational to +400V Tolerant to negative transient voltage dV/dt immune Gate drive supply range from 10 to 20V Undervoltage lockout for all channels

irf5n5210sc

Abstract: IRHNA57064SCS IRHM597260 irf5n5210 irhna597160scs irhf7110scs IRHG57110 IRHNA57264SESCS 35CLQ045SCS 12CLQ150SCS
Contextual Info: PD - 94246A IRHG567110 RADIATION HARDENED 100V, Combination 2N-2P-CHANNEL RAD-Hard HEXFET POWER MOSFET 4# TECHNOLOGY THRU-HOLE MO-036AB Product Summary Part Number IRHG567110 IRHG563110 IRHG567110 IRHG563110 Radiation Level RDS(on) 100K Rads (Si)

transistor BC 458

Abstract: transistor BC 945 ac 1084 transistor bc 577 Transistor BC 585 MS-015-AB TRANSISTOR A42 bd 743 transistor uA109 CA 358 AE
Contextual Info: Hermetic Dimensional/Thermal Data The following table identifies all of the hermetic package configurations and pin counts per package type offered by National Semiconductor. In addition, the table provides dimensional and thermal data for each of the ceramic and

IRGAC50

Abstract: MO036AA IRGAC50U IRGAC50F
Contextual Info: HU m saa In t e r n a t i o n a l R e c t i f i e r Government and Space Products Control Integrated Circuits Vs Offset Supply Voltage Volts PMt Number Fax-onDemand Number lOUT VBS.VCC SupplyVoltage (Volts) Slnk, Source (Amps) Case Style, (CaseOutline) (1)

ir2130 application

Abstract: Drive circuit for IGBT using IR2130 power supply IRF830 APPLICATION pulse amplifier measurement IR2130D 4.1 amplifier circuit diagram application IR2130 high voltage diodes irf840 power supply Mosfet driver IR2130
Contextual Info: Data Sheet No. PD-6.022A IR2130D 3-PHASE BRIDGE Features nHermetic nFloatingchanneldesignedforbootstrap operation Fully operational to +400V Tolerant to negative transient voltage dV/dt immune n Gate drive supply range from 10 to 20V n Undervoltage lockout for all channels

Contextual Info: Case Outline and Dimensions - MO-038AB CIC

10RIA10

Abstract: HFA40HF120 irfm9034 10RIA100 10RIA120 10RIA20 10RIA40 10RIA60 JANSR2N7261 70HF
Contextual Info: Index International Rectifier Government and Space Products Level of Quality Part Number Rectifiers Voltage Current CECC Issue Issue Assessment and CECC V (A) Specs Number Date 50 000 Screen Level Options Fax-on-Demand CECC-Qualifed, Europe Mfg. in Italy

IRHNA57064SCS

Abstract: IRHNJ597230SCS IRHNJ9130SCS IRHG6110SCS IRHY7434 IRHE57130SCS 8CLJQ045SCV IRHNJ57034SCS irfy9230 35CLQ045SCS
Contextual Info: PD - 94046B RADIATION HARDENED POWER MOSFET SURFACE MOUNT SMD-0.5 IRHNJ597230 200V, P-CHANNEL 4# TECHNOLOGY c Product Summary Part Number Radiation Level IRHNJ597230 100K Rads (Si) IRHNJ593230 300K Rads (Si) RDS(on) 0.505Ω 0.505Ω ID -8.0A -8.0A SMD-0.5

IR2130D

Abstract: 81 221
Contextual Info: IR2130D Case Outline and dimensions 28 Pin Dip Package Conforms to JEDEC Outline MO-038AB WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, Tel: 310 322 3331 EUROPEAN HEADQUARTERS: Hurst Green, Oxted, Surrey RH8 9BB, UK Tel: + 44 1883 732020

mosfet IRF450

Abstract: CA50 IR2130 IR2130D IRF450 IRF820 IRF830 IRF840 MO-038
Contextual Info: PD-60022B IR2130D 3-PHASE DRIVER Features n Hermetic n Floatingchanneldesignedforbootstrap n n n n n n operation Fully operational to +400V Tolerant to negative transient voltage dV/dt immune Gate drive supply range from 10 to 20V Undervoltage lockout for all channels

transistor BC 458

Abstract: transistor a42 MO-003 transistor Bc 540 ua109a CERAMIC PIN GRID ARRAY CPGA lead frame transistor bc 577 W144A UA65A CERAMIC QUAD FLATPACK CQFP
Contextual Info: Hermetic Dimensional/Thermal Data The following table identifies all of the hermetic package configurations and pin counts per package type offered by National Semiconductor. In addition, the table provides dimensional and thermal data for each of the ceramic and

ansi y14.5m

Abstract: tolerancing MO038AB MO-038AB
Contextual Info: Case Outline and Dimensions - MO-038AB CIC NOTES: 1 DIMENSIONING & TOLERANCING PE R ANSI Y 14.5M . 1 9 8 2 . 2 CONTROLLING DIMENSION : INCH. 3 DIMENSIONS ARE SHOW N IN MILLIMETERS (IN C H E S ). [ 4] DIMENSION IS TO CENTER OF LEADS WHEN FORMED PARALLEL.

IRHNJ597230SCS

Abstract: international rectifier SMD 30CLJQ100SCS IRHNJ597034SCS IRHG6110SCS IRHNJ57234SESCS IRFE130SCX 35CLQ045SCS IRHNJ597130SCS IRHNJ7430SESCS
Contextual Info: PD - 94047A RADIATION HARDENED POWER MOSFET SURFACE MOUNT SMD-0.5 IRHNJ597130 100V, P-CHANNEL 4# TECHNOLOGY c Product Summary Part Number Radiation Level IRHNJ597130 100K Rads (Si) IRHNJ593130 300K Rads (Si) RDS(on) ID 0.205Ω -12.5A 0.205Ω -12.5A SMD-0.5