IR IRF740 Search Results

IRF740

Abstract: IRF740FI
Contextual Info: ¿57 S G S -T H O M S O N ¡m e ra « IR F 7 4 0 IR F 7 4 0 FI N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS TYP E IR F 740 IR F 740 F I V R DS on Id < 0.5 5 Q. < 0.5 5 Q. 10 A 5.5 A dss 400 V 400 V . TYPICAL RDS(on) = 0.42 Q . AVALANCHE RUGGED TECHNOLOGY

Contextual Info: SGS-THOMSON ILI «! IRF740 IRF740FI N - CHANNEL EN H A N C EM EN T M O DE PO W ER MOS TR A N SISTO R S TYPE IR F 7 4 0 IR F 7 4 0 F I . . . • V dss 400 V 400 V RD S o n Id 0 .5 5 L i 0 .5 5 a 10 A 5 .5 A AVALANCHE RUGGEDNESS TECHNOLOGY 100% AVALANCHE TESTED

Contextual Info: IRF740S N - CHANNEL 400V - 0.48 i l -1 0 A - D^PAK PowerMESH MOSFET TYPE IR F 7 4 0 S V R d s s 400 V d Id S o ii < 0.5 5 Q. 10 A • TYPICAL RDS(on) = 0.48 EXTREMELY HIGH dv/dt CAPABILITY . 100% AVALANCHE TESTED . VERY LOW INTRINSIC CAPACITANCES . GATE CHARGE MINIMIZED

Contextual Info: IRF740 N - CHANNEL 400V - 0.48 £2 -1 0 A - TO-220 PowerMESH MOSFET TYPE IR F 7 4 0 V d s s 400 V R d Id S o ii < 0.5 5 Q. 10 A • TYPICAL RDS(on) = 0.48 EXTREMELY HIGH dv/dt CAPABILITY . 100% AVALANCHE TESTED . VERY LOW INTRINSIC CAPACITANCES . GATE CHARGE MINIMIZED

IRF460 in TO220

Abstract: IRF09110 IRF448 of IRF9540 and IRF540 irf460 switching irf460 to247 IRF250 TO-247 IRF244 Application of irf250 IRFD9120 N CHANNEL
Contextual Info: HEXFET Power MOSFETs Products From IR FullPak N-Channel FullPak Fully-isolated HEXFETs from the heatsink/enclosure , then the FullPak is for you. Until now, semiconductors were insulated from grounded heatsinks with insulating w ashers and nylon screws. Improper Installation of

RF74

Abstract: C5307 RF740
Contextual Info: * 5 S G S -T H O M S O N i r f ?40 !LiOT iQ £I IR F 740 F I 7 N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS TYPE IRF740 IRF740FI . . > . V dss RDS(on Id 400 V 400 V < 0.55 £2 < 0.55 a 10 A 5.5 A TYPICAL R DS(on) = 0.42 G AVALANCHE RUGGED TECHNOLOGY

F7406

Contextual Info: PD - 9.1247C International IG R Rectifier IR F7406 PRELIMINARY HEXFET Power MOSFET • Generation V Technology • Ultra Low On-Resistance • P-Channel Mosfet • Surface Mount • Available in Tape & Reel • Dynamic dv/dt Rating • Fast Switching V dss = -30V

IRF734

Abstract: irf9640 REPLACEMENT GUIDE IRF3205 smd IRGTI165F06 irg4pc50fd *g4pc50w IRGKI115U06 IRGTI200F06 *gBC20f IRLIZ34
Contextual Info: Electronic Switches Catalog of Available Documents Revised 5/11/99 www.irf.com IR ProCenter Fax-On-Demand 310 252-7100 HEXFET Power MOSFETs Description Gen Package Document # Pages Date 11 10 12 7 May-97 May-97 91615 91650 91651 90454 90592 90565 90566

fqp60n06

Abstract: spb32N03l rfp60n06 SSH6N80 FQP50N10 FSD6680 STP55NF06 AND ITS EQUIVALENT SFP70N03 HGTG*N60A4D irf630 irf640
Contextual Info: MOSFETs Progress in Power Switching Cross Reference STM i c r o e l e c t r o n i c s More Intelligent Solutions FAIRCHILD / SAMSUNG FAIRCHILD / INTERSIL HITACHI ON-SEMI PHILIPS INFINEON SIEMENS TEMIC / VISHAY TOSHIBA IR IXYS ST Nearest Preferred Supplier

IRFP60A

Abstract: 40A 45V to-220 Schottky IRF7210 ir*c30ud IRFB9N65 2CWQ03FN IR 200V P-Channel fets IRFIB7N50A CONVERTER IRG4IBC10UD 876-1413
Contextual Info: powireview The Technology Update for People in Power New HEXFET MOSFETs for Every Power Supply Application IR Chip Set First to Meet Newest Notebook PC Power Standard New P-Channel HEXFET® Power MOSFETs Offer Best Performance for Low Voltage Circuits New Schottky Diodes

IRFBE30 equivalent

Abstract: irf9640 REPLACEMENT GUIDE IRGKI200F06 IRGP440U replacement IRF3205 smd IRGBC20FD2 IRFK3D450 IRFBg30 equivalent IRGNIN150M06 irc540
Contextual Info: Electronic Switches Catalog of Available Documents Revised 8/27/98 www.irf.com IR ProCenter Fax-On-Demand 310 252-7100  HEXFET Power MOSFETs Description Gen Package Document # Pages Date 11 10 12 7 May-97 May-97 91615 91650 91651 90454 90592 90565 90566

742r

Abstract: F740 F742 F741 742-R IRF P CHANNEL MOSFET 10a
Contextual Info: 23 H A R R IS IR F740/741/742/743 IRF740R/741R/742R/743R N -Channel Power MOSFETs Avalanche Energy Rated* A u g u s t 1991 Package F e a tu re s T O -2 2 0 A B • 8A and 10A, 350V - 400V TOP VIEW • rD S °n = 0 .5 5 fi and 0.8J1 • Single Pulse Avalanche Energy Rated*

743 LEM

Abstract: IRF340 fairchild 741 741 LEM 8N40 fairchild 742 IRF341 IRF342 IRF343 AM/amplifier LEM 741
Contextual Info: A4 FAIRCHILD s e m i c o n d u c t o r dÊ J 34^74 DDETTDS 1 IRF340-343/IRF740-743 T - ì 1 MTM8N35/8N40 N-Channel Power M O SFET s, 10 A, 350 V/400 V F A IR C H IL D A Schlumberger Company Power And Discrete Division Description TO-204AA TO-220AB IRF340 IRF341

C0073

Abstract: f740
Contextual Info: {Z71T,» SGS-THOMSON SKaOfflQIlLlKg'u’M O e i IR F 740 CHIP * N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR IN DIE FORM DIE SIZE: 180x220 mils METALLIZATION: Top Back Al A u /C r/N i/A u BACKSIDE THICKNESS: DIE THICKNESS: PASSIVATION: BONDING PAD SIZE:

Contextual Info: International PD-9.1245B XOR Rectifier preliminary_ IR F 7 4 0 3 HEXFET Power MOSFET • • • • • • • G eneration V Technology Ultra Low O n-R esistance N-Channel Mosfet S urface M ount A vailable in Tape & Reel Dynam ic dv/dt Rating Fast Switching

Cross Reference power MOSFET

Abstract: irf 3502 mosfet SD500KD irf3203 mosfet irf equivalent book sem 2106 inverter diagram IFR822 Diode BYW 56 BUZ41 equivalent transistor f630
Contextual Info: FAIRCH ILD Power Products Data Book FA IR C H ILD Power Data Book A S chlum berger C om pany 1 9 86/8 7 Power and Discrete Division 1986 Fairchild Semiconductor Corporation Power and Discrete Division 4300 Redwood Highway, San Rafael, CA 94903 415 479-8000 TWX 910-384-4258

FL110

Abstract: LL110 irf7408 lr014 IRC540 equivalent IRL1Z14G IRFC024 IRFBE30 equivalent IRFCG50 irfbc10lc
Contextual Info: H EXFET Other Products from IR SOT-89 N-Channel V BR q s s Drain-to-Source ROS(on) Part Breakdown On-State Number Voltage Resistance (Volt) (Ohms) IRFS1Z0 100 Power MOSFETs Surface Mount Iq Continuous Drain Current 25°C (Amps) 2.4 0.82 Iq Continuous RthJAMax P d @ T c = 25°C Case

MTM13N50E

Abstract: P40N10 24N40 p50n05 8n50e Power MOSFET Cross Reference Guide motorola 20n50e TP50N05E IRF510 mosfet irf640 33N10E
Contextual Info: ir tmos Cross-Reference The follow ing table represents a cro ss-re fe re n ce guide for all T M O S P ow er M O SFETs w hich are m an ufacture d directly by M otorola. W here the M otorola part nu m be r differs from the Industry part num ber, the M otorola de vice is a “form , fit and fu n ctio n ”

1rf740

Abstract: 1RF642 1rf730 1RF640 1RFD110 1RF840 IRF643 IRF644 IRF711 IRF712
Contextual Info: - 254 - f M £ tt € ft X £ Vd s or Vd g Vg s fé <Ta=25cC Id Pd * /CH * /CH ÏI Ig s s V g s th) Id s s min 1D nA) (Ta=25‘C ) Id (on) D s(o n ) Vi>s= Vg s max ft g fs Ciss Coss Crss $1- B m % V g s =0 (max) *typ V g s (V) (0) *lyp (A) (nA) IRF642 IR

MO-D36AB

Abstract: IRF9510 SEC IRF510 SEC 2n6845 jantx D 10.7 A IRF540 smd irf740 STAND FOR irfm9230 2N7237 JANTXV BC 542
Contextual Info: Government/ Space Products Products From ir Life, Power-Age, Environmental and Military Testing Capabilities — USA MIL-S-19500 Qualified Life Tests and Power-Age Capabilities A. H ig h te m p e ra tu re sto ra g e life te stin g up to 2 0 0 ° C . 0 . H T R B te st c a p a b ilitie s o v e r 2 5,00 0 p o s itio n s for V G S a n d for

SSH6N80

Abstract: rfp60n06 IRF3205 IR BUK417-500AE SFP70N03 BUZ91A 2SK2717 STMicroelectronics BUZ22 IXFH13N50
Contextual Info: Sales type BUZ10 BUZ11 BUZ11A BUZ71 BUZ71A BUZ72A BUZ80A IRF520 IRF530 IRF540 IRF620 IRF630 IRF640 IRF730 IRF740 IRF820 IRF830 IRF840 IRFBC30 IRFBC40 IRFZ40 MTP3055E STB10NA40 STB10NB20 STB10NB50 STB11NB40 STB15N25 STB16NB25 STB18N20 STB19NB20 STB30N10 STB36NE03L

IR F740

Contextual Info: • M3 0 SS7 1 00S40SÖ 23 HARRIS 3fl4 ■ HAS IRF740/741/74 2/743 IRF740R/741R/742R/743R N-Channel Power MOSFETs Avalanche Energy Rated* A u gu st 1 9 9 1 Package Features T 0 -2 2 0 A B • 8A and 10A, 3 5 0 V - 4 0 0 V T O P V IE W • r o s ° n = 0 .5 5 f i and 0 .8 f i

IRF740A

Contextual Info: PD- 92004 IRF740A SMPS MOSFET HEXFET Power MOSFET Applications Switch Mode Power Supply SMPS l Uninterruptable Power Supply l High speed power switching l Benefits Low Gate Charge Qg results in Simple Drive Requirement l Improved Gate, Avalanche and dynamic

IRF740A

Contextual Info: PD- 92004 IRF740A SMPS MOSFET HEXFET Power MOSFET Applications Switch Mode Power Supply SMPS l Uninterruptable Power Supply l High speed power switching l Benefits Low Gate Charge Qg results in Simple Drive Requirement l Improved Gate, Avalanche and dynamic