IR 210 Search Results

1rfz30

Abstract: 1RFU220 irfu110 IRFU121 irfu310 IRFU020 IRFU111 IRFU120 IRFU210 IRFU212
Contextual Info: - 266 - f ft A £ m € tt € Id Pd V Vd s Vg s or * /CH * /CH t Vdg K V IRFZ30 IRFZ32 1RFZ34 IR IR IR IR IR IR fR IR IR IR IR IR IR IR IR IR IR IR IR IR IR IR IR IR IR IR IR IR IR IR * + UPchiNc IRFU02O IRFUQ22 IRFUI10 IRFU111 IRFU120 IRFU121 ( RFU210

MBR2100

Contextual Info: MBR 2100 SCHOTTKY DIE SPECIFICATION TYPE: MBR2100 RSingle □Dual Anode General Description: 100 V 2 A ( Low Ir) ELECTRICAL CHARACTERISTICS DC Blocking Voltage: Ir=1mA(for wafer form) Ir=0.5mA (for dice form) Average Rectified Forward Current Maximum Instantaneous Forward Voltage

10Kf6 diode

Abstract: IR2101 Application note 10KF6 diode International Rectifier IR2100 IR2100A ferroxcube bobbin IR2101 dc motor 10kf6 diode rectifier 10KF6 160-3B7
Contextual Info: Prelim inary Data S h eet No. PD-6.010 • 4Ö5S4S2 Qüiöisb h t ■ INR INTERNATIONAL RECTIFIER b5E D IN T E R N A T IO N A L R E C T IF IE R Universal Input, Fixed Output 15V DC-to-DC Converter IR IR IR IR IQR 2100A 2100K 2101A 2101K General Description

IR2100

Abstract: tba 2003 IR2101 dc motor 10Kf6 diode IR2101 Application note t03 package mosfet pin configuration 10KF6 10kf6 diode rectifier ir21013 1R2100
Contextual Info: • 4Ö55452 GOlöLSb INTERNATIONAL HT WÊIfiR RE CTIFIER Prelim inary Data S h eet No. PD-6.010 bSE » IN T E R N A T IO N A L R E C TIFIE R I O R Universal Input, Fixed Output 15V DC-to-DC C onverter IR 2100A IR 2100K IR 2 1 0 1 A _ IR 2101K

1N7001

Abstract: 2N6155 4900 SIEMENS 1N7000 BUZ54 2N6759 2n6800 2N6823 BUZ211 IXTP4N90
Contextual Info: - 248 - f M € tt € ft * V 2N6755 2N6756 2N6757 2N6758 2N6759 2N6Ï6Û 2N6761 2N6762 2K6763 2N6764 2N6765 2N6766 2N6767 2N6768 2N6769 2N6770 2N6782 2N6784 2Ü6736 2N6788 2N679Û 2N6792 2N6794 2N6796 2K6798 2N6800 2N6802 2N6804 2N6806 2N6845 IR IR IR IR

Contextual Info: H A R R IS sem iconductor IR F R 4 2 0 , IR F R 42 1 , IR F R 4 2 2 , ¡R F U 4 2 0 , IR F U 4 2 1 , IR F U 4 2 2 2.2k and 2.5A, 450V and 500V, 3.0 and 4.0 Ohm, N-Channel Power MOSFETs juiy 1998 Features Description • 2.2A and 2.5A, 450V and 500V • High Input Impedance

Contextual Info: MBR 860 SCHOTTKY DIE SPECIFICATION TYPE: MBR860 RSingle □Dual Anode General Description: 60 V 8 A ( Low Ir) ELECTRICAL CHARACTERISTICS SYM DC Blocking Voltage: Ir=1mA(for wafer form) VRRM Ir=0.5mA (for dice form) Average Rectified Forward Current IFAV

Contextual Info: MBR 840 SCHOTTKY DIE SPECIFICATION General Description: TYPE: MBR840 RSingle □Dual Anode 40 V 8 A (Low Ir) ELECTRICAL CHARACTERISTICS DC Blocking Voltage: Ir=1mA(for wafer form) Ir=0.5mA (for dice form) Average Rectified Forward Current Maximum Instantaneous Forward Voltage

Contextual Info: MBR 8100 SCHOTTKY DIE SPECIFICATION TYPE: MBR8100 RSingle □Dual Anode General Description: 100 V 8 A ( Low Ir) ELECTRICAL CHARACTERISTICS DC Blocking Voltage: Ir=1mA(for wafer form) Ir=0.5mA (for dice form) Average Rectified Forward Current Maximum Instantaneous Forward Voltage

Contextual Info: 2007-05-23 Ambient Light and Proximity Sensor with Integrated IR Emitter Umgebungslicht- und Proximity Sensor mit integriertem IR Emitter Version alpha.1 SFH 7776 Features: • Proximity sensor PS - Detection range up to 160 mm - 850 nm IR emitter integrated in package

Contextual Info: SB 2100 SCHOTTKY DIE SPECIFICATION General Description: 100 V 2 A 5Standard □Low VF， ELECTRICAL CHARACTERISTICS DC Blocking Voltage: Ir=1mA(for wafer form) Ir=0.5mA (for dice form) Average Rectified Forward Current Maximum Instantaneous Forward Voltage

IRV60

Abstract: 5MO 165 IRV200W IRH150W IRH300W IRV300W IRV500 IRH200 IRV500L IRH100
Contextual Info: = j g g r .= = - P C N R ESISTO R S= Compliance n HIGH POWER TYPE METAL CLAD WIRE-WOUND RESISTORS m IRH, IRV Shape & Dimensions mm A AA IR H 6 0 -IR H 1 5 0 x‘! 10 (IRH60:13) * VH » '& g L2 °'81^ / g \ \ A 2 5 l 12.5 = 15 10_ / IR H 2 0 0 -IR H 5 0 0

LDR 10mm

Contextual Info: 2007-05-23 Ambient Light and Proximity Sensor with Integrated 850nm IR Emitter Umgebungslicht- und Proximity Sensor mit integriertem 850nm IR Emitter Version 0.1 SFH 7776 Features: • Proximity sensor PS - Detection range up to 160 mm - 850 nm IR emitter integrated in package

Contextual Info: 2007-05-23 Ambient Light and Proximity Sensor with Integrated 940nm IR Emitter Umgebungslicht- und Proximity Sensor mit integriertem 940nm IR Emitter Version 0.1 SFH 7779 Features: • Proximity sensor PS - Detection range up to 160 mm - 940 nm IR emitter integrated in package

1RFD120

Abstract: 6ati T3B diode 2s4 4pin XSTR IRFD212
Contextual Info: MOTOROLA SC IM E L> I X S T R S /R F b 3 b ?2 S 4 Q G Ô IT E l 4 | MOTOROLA • I SEM ICO NDUCTOR I TECHNICAL DATA IR FD 210 IRFD211 IR FD 212 IR FD 213 Advance Information Sm all-Sign al T M O S Field Effect Transistors N -C h ann el Enh an cem en t-M ode

Contextual Info: A Dimensions: [mm] B Recommended land pattern: [mm] D Electrical Properties: Properties Test conditions Value Unit Tol. Inductance 1 MHz L 0.47 µH ±20% Rated current ∆T = 20 K IR 1500 mA typ. Rated current ∆T = 40 K IR 2100 mA typ. Saturation current

FMEN-220B

Abstract: fmen-210b FMEN210B IR 9502 FME-2106 FME-24H FMEN-210A FMEN-220A MPEN-230AF FMEN-430A
Contextual Info: 4-4 Schottky Barrier Diodes Low IR “E Series” ●Surface-Mount VRM V IF (AV) (A) Package Axial (Body Diameter/Lead Diameter) Part Number IFSM (A) 50Hz Single Half Sine Wave Tj (°C) Tstg (°C) VF (V) max IF (A) IR (mA) VR=VRM max IR(H) (mA) VR=VRM max

FMEN-210B

Abstract: FME-2106 FME-24H FMEN-210A FMEN-220A FMEN-220B MPEN-230AF FMEN-230A
Contextual Info: 4-4 Schottky Barrier Diodes Low IR “E Series” ●Surface-Mount VRM V IF (AV) (A) Package Axial (Body Diameter/Lead Diameter) Part Number IFSM (A) 50Hz Single Half Sine Wave Tj (°C) Tstg (°C) VF (V) max IF (A) IR (mA) VR=VRM max IR(H) (mA) VR=VRM max

Contextual Info: A Dimensions: [mm] B Recommended land pattern: [mm] D Electrical Properties: Properties Test conditions Value Unit Tol. Inductance 1 MHz/ 5 mA L 0.47 µH ±20% Rated current ∆T = 20 K 1500 mA typ. Rated current ∆T = 40 K IR IR 2100 mA typ. Saturation current

200B

Abstract: DK-2750 PIC16C782 TB062 pic ir based remote control
Contextual Info: TB062 High Power IR LED Driver Using the PIC16C781/782 THEORY OF OPERATION Author: Keith Curtis Microchip Technology Inc. INTRODUCTION Early infrared IR remote control systems employed a simple on-off modulation of an IR LED to transmit the control data between the remote control and the appliance. Unfortunately, while this method was simple to

16 ohm 0.25w SPEAKER

Abstract: AN1114
Contextual Info: HSDL-3007 IrDA Data Compliant Low Power 115.2 Kbit/s with Remote Control Infrared Transceiver Data Sheet Description Features The HSDL-3007 is a new generation ultra-low profile enhanced infrared IR transceiver module that provides the capability of (1) interface between logic and IR signals for through-air, serial, half-duplex IR data link, and

Contextual Info: 4-3 Ultrafast Recovery Diodes VRM V IF (AV) (A) Values in parentheses are for the products with heatsinks Package Axial (Body Diameter/Lead Diameter) Part Number 10.0 TO-220F（Center-tap） FMXB-2102 200 300 IF (A) IR(H) IR (µA) (mA) VR=VRM VR=VRM max

LM3661TL-1.40

Abstract: FMX-G22
Contextual Info: 4-3 Ultrafast Recovery Diodes VRM V IF (AV) (A) Values in parentheses are for the products with heatsinks Package Axial (Body Diameter/Lead Diameter) Part Number 10.0 TO-220F（Center-tap） FMXB-2102 200 300 IF (A) IR(H) IR (µA) (mA) VR=VRM VR=VRM max

HO 050

Abstract: ir21 IR21084 IR2108 IR21084S IR2108S MS-012AB
Contextual Info: | p j"0 f n Q t Ì O n Q I Preliminary Data Sheet No. PD60161J IR 2108 /IR 21084 X Q R R e c tifie r HIGH AND LOW SIDE DRIVER Features • Floating channel designed for bootstrap operation Fully operational to +600V Tolerant to negative transient voltage dV/dt immune