IPI04 Search Results
IPI04 Datasheets (10)
| Part | ECAD Model | Manufacturer | Description | Datasheet Type | PDF Size | Page count | |
|---|---|---|---|---|---|---|---|
| IPI040N06N3 G | Infineon Technologies | N-Channel MOSFETs (20V - 250V); Package: PG-TO262-3; Package: I2PAK (TO-262); VDS (max): 60.0 V; RDS (on) (max) (@10V): 4.0 mOhm; RDS (on) (max) (@4.5V): -; ID (max): 90.0 A; | Original | 539.88KB | 11 | ||
| IPI040N06N3GHKSA1 | Infineon Technologies | Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - MOSFET N-CH 60V 90A TO262-3 | Original | 994.79KB | |||
| IPI040N06N3GXKSA1 | Infineon Technologies | Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - MOSFET N-CH 60V 90A | Original | 999.8KB | |||
| IPI041N12N3 G | Infineon Technologies | N-Channel MOSFETs (20V - 250V); Package: PG-TO262-3; Package: I2PAK (TO-262); VDS (max): 120.0 V; RDS (on) (max) (@10V): 4.1 mOhm; RDS (on) (max) (@4.5V): -; ID (max): 120.0 A; | Original | 510.49KB | 11 | ||
| IPI041N12N3GAKSA1 | Infineon Technologies | Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - MOSFET N-CH 120V 120A TO262-3 | Original | 857.79KB | |||
| IPI045N10N3 G | Infineon Technologies | N-Channel MOSFETs (20V - 250V); Package: PG-TO262-3; Package: I2PAK (TO-262); VDS (max): 100.0 V; RDS (on) (max) (@10V): 4.5 mOhm; RDS (on) (max) (@4.5V): -; ID (max): 100.0 A; | Original | 393.51KB | 11 | ||
| IPI045N10N3GXKSA1 | Infineon Technologies | Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - MOSFET N-CH 100V 100A TO262-3 | Original | 935.18KB | |||
| IPI04CN10N G | Infineon Technologies | N-Channel MOSFETs (20V - 250V); Package: PG-TO262-3; Package: I2PAK (TO-262); VDS (max): 100.0 V; RDS (on) (max) (@10V): 3.9 mOhm; RDS (on) (max) (@4.5V): -; ID (max): 100.0 A; | Original | 459.58KB | 11 | ||
| IPI04N03LA | Infineon Technologies | OptiMOS 2 Power-Transistor | Original | 502.08KB | 10 | ||
| IPI04N03LA | Infineon Technologies | OptiMOS 2 Power-Transistor | Original | 353.18KB | 10 |
IPI04 Price and Stock
Infineon Technologies AG IPI040N06N3GXKSA1Transistor: N-MOSFET; unipolar; 60V; 90A; 188W; PG-TO262-3 |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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IPI040N06N3GXKSA1 | 117 | 1 |
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IPI040N06N3GXKSA1 | 16,500 | 244 |
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| IPI040N06N3GXKSA1 | 1,500 | 244 |
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| IPI040N06N3GXKSA1 | 500 | 244 |
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IPI040N06N3GXKSA1 | 18,500 | 1 |
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Infineon Technologies AG IPI041N12N3GAKSA1Transistor: N-MOSFET; unipolar; 120V; 120A; 300W; PG-TO262-3 |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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IPI041N12N3GAKSA1 | 1 |
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IPI041N12N3GAKSA1 | 500 | 134 |
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IPI041N12N3GAKSA1 | Tube | 500 |
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IPI041N12N3GAKSA1 | Bulk | 500 | 1 |
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IPI041N12N3GAKSA1 | 500 | 1 |
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Infineon Technologies AG IPI045N10N3GXKSA1Transistor: N-MOSFET; unipolar; 100V; 100A; 214W; PG-TO262-3 |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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IPI045N10N3GXKSA1 | 1 |
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IPI045N10N3GXKSA1 | 5,500 | 500 |
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| IPI045N10N3GXKSA1 | 511 | 7 |
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IPI045N10N3GXKSA1 | Tube | 8 Weeks | 500 |
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IPI045N10N3GXKSA1 |
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IPI045N10N3GXKSA1 | 5,500 | 8 Weeks | 500 |
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| IPI045N10N3GXKSA1 | 516 | 8 Weeks | 1 |
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IPI045N10N3GXKSA1 | Bulk | 280 | 1 |
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IPI045N10N3GXKSA1 | 2,500 | 10 Weeks | 500 |
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Infineon Technologies AG IPI04N03LATrans MOSFET N-CH 25V 80A 3-Pin(3+Tab) TO-262 |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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IPI04N03LA | 836 | 479 |
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IPI04N03LA | 836 | 1 |
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Infineon Technologies AG IPI045N10N3 GMOSFETs N-Ch 100V 100A I2PAK-3 OptiMOS 3 |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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IPI045N10N3 G | 3,918 |
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IPI04 Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
|---|---|---|---|
040n06n
Abstract: 037N06N IEC61249-2-21 PG-TO220-3 PG-TO262-3
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ipb037n06n3ipi040n06n3ipp040n06n3ipp04xn06n+7 | |
04CN10N
Abstract: IEC61249-2-21 JESD22 PG-TO220-3
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ipb04cn10nipi04cn10nipp04cn10niec61249-2-21+5 | |
IPI04N03LA
Abstract: diode kv 1236 IPP04N03LA
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ipi04n03laipp04n03lapg-to262-3-1pg-to220-3-1+2 | |
diode kv 1236Contextual Info: IPI04N03LA, IPP04N03LA OptiMOS 2 Power-Transistor Product Summary Features • Ideal for high-frequency dc/dc converters • Qualified according to JEDEC1 for target applications V DS 25 V R DS on),max 4.2 mΩ ID 80 A • N-channel - Logic level • Excellent gate charge x R DS(on) product (FOM) |
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ipi04n03laipp04n03lapg-to262-3-1pg-to220-3-1+2 | |
04N03L
Abstract: 04N03LA
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ipb04n03laipi04n03laipp04n03lap-to263-3-2+4 | |
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Contextual Info: IPB042N10N3 G IPI045N10N3 G IPP045N10N3 G "%&$!"# 3 Power-Transistor Product Summary Features V 9H Q ' 3 81>>5< >? B=1<<5F5< R , ? >=1H- Q H3 5<<5>D71D5 3 81B75 HR 9H"[Z# @B? 4E3 D ( & I9 ( J ,&* Y" )( 6 Q. 5BI <? G ? > B5C9CD 1>3 5 R 9H"[Z# |
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ipb042n10n3ipi045n10n3ipp045n10n3 | |
65A3
Abstract: 5E DIODE marking c-9
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ipb037n06n3ipi040n06n3ipp040n06n365a3+2 | |
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Contextual Info: IPI041N12N3 G IPP041N12N3 G OptiMOSTM3 Power-Transistor IPB038N12N3 G Product Summary Features • N-channel, normal level • Excellent gate charge x R DS on product (FOM) V DS 120 V R DS(on),max (TO-263) 3.8 mΩ ID 120 A • Very low on-resistance R DS(on) |
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ipi041n12n3ipp041n12n3ipb038n12n3o-263+3 | |
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Contextual Info: IPB037N06N3 G Id\Q IPI040N06N3 G IPP040N06N3 G 3 Power-Transistor Product Summary Features V 9H . J P6?ABH>3 A53C96931C9?>4A9E5B1>443 43,& , R ,?>=1G,& +&/ Y PG35<<5>C71C5381A75GR 9H"[Z#@A?4D3C (& |
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ipb037n06n3ipi040n06n3ipp040n06n3a53c96931c9+4 | |
04N03LA
Abstract: SMD MARKING CODE transistor TO262-3-1 IPB04N03LA IPI04N03LA IPP04N03LA d55a1
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ipb04n03laipi04n03laipp04n03lap-to263-3-2+7 | |
to220 pcb footprint
Abstract: to262 pcb footprint 04N03LA diode kv 1236 IPI04N03LA IPP04N03LA JESD22 PG-TO220-3 PG-TO262-3
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ipi04n03laipp04n03lapg-to262-3pg-to220-3+5 | |
04N03LA
Abstract: IPB04N03LA IPI04N03LA IPP04N03LA D55 SMD CODE MARKING
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ipb04n03laipi04n03laipp04n03lap-to263-3-2+5 | |
041N12N
Abstract: 038N12N DD601 JESD22 PG-TO220-3 IPI041N12N3 G
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ipi041n12n3ipp041n12n3ipb038n12n3o-263+8 | |
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Contextual Info: IPI041N12N3 G IPP041N12N3 G OptiMOSTM3 Power-Transistor IPB038N12N3 G Product Summary Features • N-channel, normal level • Excellent gate charge x R DS on product (FOM) VDS 120 V RDS(on),max (TO-263) 3.8 mW ID 120 A • Very low on-resistance R DS(on) |
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ipi041n12n3ipp041n12n3ipb038n12n3o-263+3 | |
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04CN10N
Abstract: JESD22 PG-TO220-3 IPB04CN10N G 04CN10
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ipb04cn10nipi04cn10nipp04cn10npg-to263-3+6 | |
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Contextual Info: IPB042N10N3 G IPI045N10N3 G IPP045N10N3 G 3 Power-Transistor Product Summary Features Q' 381>>5<>?B=1<<5F5< QH35<<5>D71D5381B75HR 9H"[Z#@B?4E3D & V 9H ( J R ,?>=1H-( ,&* Y I9 )( 6 Q.5BI<?G?> B5C9CD1>35R 9H"[Z# |
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ipb042n10n3ipi045n10n3ipp045n10n3381b75+4 | |
04N03LA
Abstract: IPB04N03LA IPI04N03LA IPP04N03LA
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ipb04n03laipi04n03laipp04n03lap-to263-3-2+4 | |
045n10n
Abstract: 042n10n D100 TO-220 IPI045N10N3 G 045N10 042N10 045n1 PG-TO220-3 IPP045N10N IPP045N10
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ipb042n10n3ipi045n10n3ipp045n10n3pg-to263-3+11 | |
040n06n
Abstract: 037N06N 040n06 d90 smd JESD22 PG-TO220-3
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ipb037n06n3ipi040n06n3ipp040n06n3ipp04xn06n+9 | |
diode kv 1236
Abstract: 04N03L
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ipi04n03laipp04n03lapg-to262-3-1pg-to220-3-1+4 | |
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Contextual Info: IPB04CN10N G IPI04CN10N G IPP04CN10N G 2 Power-Transistor Product Summary Features R 492?6=?@C>2==6G6= R I46=6?E82E6492C86IR ;I"\[#AC@5F4E! ' V ;I )( K R -@?>2I.) +&1 Z I; )( 7 R/6CJ=@H@? C6D:DE2?46R ;I"\[# |
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ipb04cn10nipi04cn10nipp04cn10n492c86+1 | |
marking 6d
Abstract: IPP04CN10N G diode 6e
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ipb04cn10nipi04cn10nipp04cn10nmarking 6d+2 | |
7408, 7404, 7486, 7432
Abstract: RF400U functional diagram of 7400 and cd 4011 ls 7404 180 nm CMOS standard cell library TEXAS INSTRUMENTS 74191 4BITS s273 buffer 74374 7408 CMOS cmos 7404
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OCR Scan |
tgc10020-masink/12matdb10lj+14 | |
S 170 MOSFET TRANSISTOR
Abstract: 8203 dual mosfet S 170 MOSFET SOT323 MOSFET P MOSFET SWITCHING FREQUENCY IPS09N03LA P-channel power mosfet SO-8 TDA21102 mosfet all mosfet equivalent book
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b152-h8203-g4-x-7600s 170 mosfet transistor8203 dual mosfets 170 mosfet+7 | |