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    045N1 Search Results

    045N1 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TW045N120C
    		Toshiba Electronic Devices & Storage Corporation N-ch SiC MOSFET, 1200 V, 40 A, 0.059 Ω@18 V, TO-247 Datasheet
    MDH6045N-150MA=P3
    		Murata Manufacturing Co Ltd General Purpose Inductor, 15uH, 20%, 1 Element, Ferrite-Core, SMD, 2524 PDF
    MDH6045N-1R5NA=P3
    		Murata Manufacturing Co Ltd General Purpose Inductor, 1.5uH, 30%, 1 Element, Ferrite-Core, SMD, 2524 PDF
    MDH6045N-151MA=P3
    		Murata Manufacturing Co Ltd General Purpose Inductor, 150uH, 20%, 1 Element, Ferrite-Core, SMD, 2524 PDF
    MDH6045N-100MA=P3
    		Murata Manufacturing Co Ltd General Purpose Inductor, 10uH, 20%, 1 Element, Ferrite-Core, SMD, 2524 PDF
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    045N1 Price and Stock

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    Toshiba America Electronic Components TW045N120C,S1F

    - Rail/Tube (Alt: TW045N120C,S1F)
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Avnet Americas TW045N120C,S1F Tube 30 24 Weeks 30
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    • 100 $6.66
    • 1000 $6.38
    • 10000 $6.38
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    TTI TW045N120C,S1F Tube 30
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    • 100 $4.95
    • 1000 $4.95
    • 10000 $4.95
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    onsemi FDPF045N10A

    N-Channel PowerTrench? MOSFET 100V, 67A, 4.5m? - Rail/Tube (Alt: FDPF045N10A)
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Avnet Americas () FDPF045N10A Tube 1,000
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    • 1000 $3.49
    • 10000 $3.33
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    FDPF045N10A Tube 63 Weeks 1,000
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    • 1000 $1.95
    • 10000 $1.89
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    Mouser Electronics FDPF045N10A 823
    • 1 $5.17
    • 10 $2.71
    • 100 $2.46
    • 1000 $2.31
    • 10000 $2.31
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    Rochester Electronics FDPF045N10A 15,512 1
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    • 100 $2.00
    • 1000 $1.79
    • 10000 $1.68
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    TME FDPF045N10A 1
    • 1 $4.88
    • 10 $3.57
    • 100 $3.04
    • 1000 $3.04
    • 10000 $3.04
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    Avnet Silica FDPF045N10A 53 Weeks 50
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    EBV Elektronik FDPF045N10A 53 Weeks 50
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    Flip Electronics FDPF045N10A 9,000
    • 1 $2.62
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    Infineon Technologies AG IPP045N10N3GXKSA1

    Trans MOSFET N-CH 100V 100A 3-Pin(3+Tab) TO-220 - Bulk (Alt: 85X6038)
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Avnet Americas () IPP045N10N3GXKSA1 Bulk 1
    • 1 $3.66
    • 10 $2.12
    • 100 $1.92
    • 1000 $1.51
    • 10000 $1.45
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    IPP045N10N3GXKSA1 Tube 19 Weeks 500
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    • 1000 $1.14
    • 10000 $1.09
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    Mouser Electronics IPP045N10N3GXKSA1 5,201
    • 1 $3.34
    • 10 $2.12
    • 100 $1.92
    • 1000 $1.52
    • 10000 $1.50
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    Newark IPP045N10N3GXKSA1 Bulk 340 1
    • 1 $3.88
    • 10 $2.25
    • 100 $2.04
    • 1000 $1.60
    • 10000 $1.54
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    TME IPP045N10N3GXKSA1 461 1
    • 1 $2.89
    • 10 $2.01
    • 100 $1.50
    • 1000 $1.20
    • 10000 $1.15
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    Rutronik IPP045N10N3GXKSA1 Tube 750 500
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    • 1000 $1.33
    • 10000 $1.09
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    EBV Elektronik IPP045N10N3GXKSA1 1,000 20 Weeks 500
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    Win Source Electronics IPP045N10N3GXKSA1 16,840
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    • 100 $1.48
    • 1000 $1.23
    • 10000 $1.23
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    Pulse Electronics Corporation BSPQ000603045N1H00

    Thin Film Inductor, 5.1 nH, 0.25 ohm, 5.5 GHz, 400 mA, 0201 [0603 Metric], BSPQ Series - Tape and Reel (Alt: BSPQ000603045N1H00)
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Avnet Americas BSPQ000603045N1H00 Tape & Reel 15,000
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    Newark () BSPQ000603045N1H00 Cut Tape 14,950 1
    • 1 $0.10
    • 10 $0.10
    • 100 $0.04
    • 1000 $0.04
    • 10000 $0.03
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    BSPQ000603045N1H00 Tape & Reel 14,950 10
    • 1 $0.10
    • 10 $0.10
    • 100 $0.04
    • 1000 $0.04
    • 10000 $0.03
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    BSPQ000603045N1H00 Tape & Reel 15,000
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    Pulse Electronics Corporation BWCS000604045N1J00

    Inductor Chip Unshielded Wirewound 5.1nH 5% 250MHz 18Q-Factor Ceramic 510mA 0201 T/R - Tape and Reel (Alt: BWCS000604045N1J00)
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Avnet Americas BWCS000604045N1J00 Tape & Reel 10 Weeks 16,000
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    Find more 045N1 price and stock on Findchips.com

    045N1 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    IPA045N10N3

    Abstract: THV-150
    Contextual Info: 045N10N3 G OptiMOSTM3 Power-Transistor Product Summary Features • N-channel, normal level • Excellent gate charge x R DS on product (FOM) VDS 100 V RDS(on),max 4.5 mW ID 64 A • Very low on-resistance R DS(on) • 175 °C operating temperature • Pb-free lead plating; RoHS compliant


    Original     		IPA045N10N3 PG-TO220-FP 045N10N THV-150 PDF

    045n10n

    Abstract: D100 TO-220 045n1 042N10N 045N10 IPP045N10 IPB042N10N3 G IEC61249-2-21 PG-TO220-3 042N10
    Contextual Info: IPB042N10N3 G 045N10N3 G 045N10N3 G OptiMOS 3 Power-Transistor Product Summary Features • N-channel, normal level • Excellent gate charge x R DS on product (FOM) V DS 100 V R DS(on),max (TO 263) 4.2 mΩ ID 100 A • Very low on-resistance R DS(on)


    Original     		IPB042N10N3 IPI045N10N3 IPP045N10N3 IEC61249-2-21 PG-TO263-3 PG-TO262-3 PG-TO220-3 045n10n D100 TO-220 045n1 042N10N 045N10 IPP045N10 IPB042N10N3 G IEC61249-2-21 PG-TO220-3 042N10 PDF

    045n10n

    Abstract: 042n10n D100 TO-220 IPI045N10N3 G 045N10 042N10 045n1 PG-TO220-3 IPP045N10N IPP045N10
    Contextual Info: IPB042N10N3 G 045N10N3 G 045N10N3 G OptiMOS 3 Power-Transistor Product Summary Features • N-channel, normal level • Excellent gate charge x R DS on product (FOM) V DS 100 V R DS(on),max (TO 263) 4.2 mΩ ID 100 A • Very low on-resistance R DS(on)


    Original     		IPB042N10N3 IPI045N10N3 IPP045N10N3 PG-TO263-3 PG-TO262-3 PG-TO220-3 042N10N 045n10n 042n10n D100 TO-220 IPI045N10N3 G 045N10 042N10 045n1 PG-TO220-3 IPP045N10N IPP045N10 PDF

    045n10n

    Abstract: 045N10 045n1 IPA045N10N3 JESD22 DD-50
    Contextual Info: 045N10N3 G OptiMOSTM3 Power-Transistor Product Summary Features • N-channel, normal level • Excellent gate charge x R DS on product (FOM) V DS 100 V R DS(on),max 4.5 mΩ ID 64 A • Very low on-resistance R DS(on) • 175 °C operating temperature


    Original     		IPA045N10N3 PG-TO220-FP 045N10N 045n10n 045N10 045n1 JESD22 DD-50 PDF

    045N10

    Abstract: 045N10N
    Contextual Info: 045N10N3 G OptiMOSTM3 Power-Transistor Product Summary Features • N-channel, normal level • Excellent gate charge x R DS on product (FOM) VDS 100 V RDS(on),max 4.5 mW ID 64 A • Very low on-resistance R DS(on) • 175 °C operating temperature • Pb-free lead plating; RoHS compliant


    Original     		IPA045N10N3 IEC61249-2-21 PG-TO220-FP 045N10N 045N10 045N10N PDF