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    045N10 Search Results

    045N10 Result Highlights (2)

    Part ECAD Model Manufacturer Description Download Buy
    MDH6045N-100MA=P3
    		Murata Manufacturing Co Ltd General Purpose Inductor, 10uH, 20%, 1 Element, Ferrite-Core, SMD, 2524 PDF
    MDH6045N-101MA=P3
    		Murata Manufacturing Co Ltd General Purpose Inductor, 100uH, 20%, 1 Element, Ferrite-Core, SMD, 2524 PDF

    045N10 Datasheets (1)

    AK Semiconductor
    Part ECAD Model Manufacturer Description Datasheet Type PDF PDF Size Page count
    badge AKP045N10
    		AK Semiconductor N-channel MOSFET with 100V VDS, 125A ID, and low RDS(on) of 4.2mΩ (TO-220) or 4.0mΩ (TO-263) at VGS=10V, utilizing Super Trench II technology for high-frequency switching efficiency. Original PDF
    SF Impression Pixel

    045N10 Price and Stock

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    Diotec Semiconductor AG DI045N10PT-AQ

    MOSFET, POWERQFN 3X3, N, 100 V,
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey () DI045N10PT-AQ Digi-Reel 5,000 1
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    DI045N10PT-AQ Cut Tape 5,000 1
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    Mouser Electronics DI045N10PT-AQ 1,750
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    Diotec Semiconductor AG DI045N10PQ-AQ

    MOSFET N-CH 45A
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    DigiKey () DI045N10PQ-AQ Digi-Reel 4,500 1
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    DI045N10PQ-AQ Tape & Reel 4,500 5,000
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    DI045N10PQ-AQ Cut Tape 4,500 1
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    Mouser Electronics DI045N10PQ-AQ 2,760
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    DI045N10PQ-AQ Tape & Reel 3,400 100
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    Goford Semiconductor GT045N10T

    MOSFET N-CH 100V 120A 180W 4.5m(
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    DigiKey () GT045N10T Tube 2,000 2,000
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    GT045N10T Tube 40 1
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    TME GT045N10T 1
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    Goford Semiconductor GT045N10Q

    MOSFET,N-CH,100V,145A,208W,TO-24
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    DigiKey () GT045N10Q Tube 1,500 1,500
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    GT045N10Q Tube 45 1
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    Infineon Technologies AG IPI045N10N3GXKSA1

    MOSFET N-CH 100V 100A TO262-3
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    DigiKey IPI045N10N3GXKSA1 Tube 1,341 1
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    Newark IPI045N10N3GXKSA1 Bulk 500 1
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    EBV Elektronik IPI045N10N3GXKSA1 500 15 Weeks 500
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    Vyrian IPI045N10N3GXKSA1 9,425
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    Find more 045N10 price and stock on Findchips.com

    045N10 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    IPA045N10N3

    Abstract: THV-150
    Contextual Info: 045N10N3 G OptiMOSTM3 Power-Transistor Product Summary Features • N-channel, normal level • Excellent gate charge x R DS on product (FOM) VDS 100 V RDS(on),max 4.5 mW ID 64 A • Very low on-resistance R DS(on) • 175 °C operating temperature • Pb-free lead plating; RoHS compliant


    Original     		IPA045N10N3 PG-TO220-FP 045N10N THV-150 PDF

    045n10n

    Abstract: D100 TO-220 045n1 042N10N 045N10 IPP045N10 IPB042N10N3 G IEC61249-2-21 PG-TO220-3 042N10
    Contextual Info: IPB042N10N3 G 045N10N3 G 045N10N3 G OptiMOS 3 Power-Transistor Product Summary Features • N-channel, normal level • Excellent gate charge x R DS on product (FOM) V DS 100 V R DS(on),max (TO 263) 4.2 mΩ ID 100 A • Very low on-resistance R DS(on)


    Original     		IPB042N10N3 IPI045N10N3 IPP045N10N3 IEC61249-2-21 PG-TO263-3 PG-TO262-3 PG-TO220-3 045n10n D100 TO-220 045n1 042N10N 045N10 IPP045N10 IPB042N10N3 G IEC61249-2-21 PG-TO220-3 042N10 PDF

    045n10n

    Abstract: 042n10n D100 TO-220 IPI045N10N3 G 045N10 042N10 045n1 PG-TO220-3 IPP045N10N IPP045N10
    Contextual Info: IPB042N10N3 G 045N10N3 G 045N10N3 G OptiMOS 3 Power-Transistor Product Summary Features • N-channel, normal level • Excellent gate charge x R DS on product (FOM) V DS 100 V R DS(on),max (TO 263) 4.2 mΩ ID 100 A • Very low on-resistance R DS(on)


    Original     		IPB042N10N3 IPI045N10N3 IPP045N10N3 PG-TO263-3 PG-TO262-3 PG-TO220-3 042N10N 045n10n 042n10n D100 TO-220 IPI045N10N3 G 045N10 042N10 045n1 PG-TO220-3 IPP045N10N IPP045N10 PDF

    045n10n

    Abstract: 045N10 045n1 IPA045N10N3 JESD22 DD-50
    Contextual Info: 045N10N3 G OptiMOSTM3 Power-Transistor Product Summary Features • N-channel, normal level • Excellent gate charge x R DS on product (FOM) V DS 100 V R DS(on),max 4.5 mΩ ID 64 A • Very low on-resistance R DS(on) • 175 °C operating temperature


    Original     		IPA045N10N3 PG-TO220-FP 045N10N 045n10n 045N10 045n1 JESD22 DD-50 PDF

    045N10

    Abstract: 045N10N
    Contextual Info: 045N10N3 G OptiMOSTM3 Power-Transistor Product Summary Features • N-channel, normal level • Excellent gate charge x R DS on product (FOM) VDS 100 V RDS(on),max 4.5 mW ID 64 A • Very low on-resistance R DS(on) • 175 °C operating temperature • Pb-free lead plating; RoHS compliant


    Original     		IPA045N10N3 IEC61249-2-21 PG-TO220-FP 045N10N 045N10 045N10N PDF