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    045N10 Search Results

    045N10 Result Highlights (2)

    Part ECAD Model Manufacturer Description Download Buy
    MDH6045N-100MA=P3
    Murata Manufacturing Co Ltd General Purpose Inductor, 10uH, 20%, 1 Element, Ferrite-Core, SMD, 2524 PDF
    MDH6045N-101MA=P3
    Murata Manufacturing Co Ltd General Purpose Inductor, 100uH, 20%, 1 Element, Ferrite-Core, SMD, 2524 PDF
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    045N10 Price and Stock

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    Infineon Technologies AG IPA045N10N3GXKSA1

    Transistor: N-MOSFET; unipolar; 100V; 64A; 39W; TO220FP
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    TME IPA045N10N3GXKSA1 662 1
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    Avnet Americas IPA045N10N3GXKSA1 Tube 20 Weeks 500
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    Newark IPA045N10N3GXKSA1 Bulk 57 1
    • 1 $5.06
    • 10 $3.51
    • 100 $2.63
    • 1000 $2.21
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    EBV Elektronik IPA045N10N3GXKSA1 50 Weeks 500
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    Win Source Electronics IPA045N10N3GXKSA1 40,230
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    • 100 $2.47
    • 1000 $2.14
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    Infineon Technologies AG IPP045N10N3 G

    Transistor: N-MOSFET; 100V; 100A; Idm: 400A; 214W; TO220-3
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    TME IPP045N10N3 G 501 22
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    Mouser Electronics IPP045N10N3 G 3,507
    • 1 $4.21
    • 10 $2.76
    • 100 $2.06
    • 1000 $1.59
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    Infineon Technologies AG IPP045N10N3GXKSA1

    Transistor: N-MOSFET; unipolar; 100V; 100A; 214W; PG-TO220-3
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    TME IPP045N10N3GXKSA1 426 1
    • 1 $3.06
    • 10 $2.02
    • 100 $1.64
    • 1000 $1.28
    • 10000 $1.15
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    Avnet Americas () IPP045N10N3GXKSA1 Bulk 1
    • 1 $3.66
    • 10 $2.12
    • 100 $1.92
    • 1000 $1.51
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    IPP045N10N3GXKSA1 Tube 22 Weeks 500
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    Mouser Electronics IPP045N10N3GXKSA1 4,622
    • 1 $3.53
    • 10 $2.12
    • 100 $1.92
    • 1000 $1.54
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    Newark IPP045N10N3GXKSA1 Bulk 228 1
    • 1 $3.53
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    • 100 $1.92
    • 1000 $1.54
    • 10000 $1.48
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    Ameya Holding Limited IPP045N10N3GXKSA1 119,500
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    Rutronik IPP045N10N3GXKSA1 Tube 1,250 500
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    EBV Elektronik IPP045N10N3GXKSA1 1,000 20 Weeks 500
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    Win Source Electronics IPP045N10N3GXKSA1 16,840
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    • 100 $1.48
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    onsemi FDP045N10A-F102

    Transistor: N-MOSFET; unipolar; 100V; 164A; Idm: 656A; 263W; TO220-3
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    TME FDP045N10A-F102 1
    • 1 $4.82
    • 10 $2.78
    • 100 $2.63
    • 1000 $2.63
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    Avnet Americas FDP045N10A-F102 Tube 20 Weeks 800
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    Mouser Electronics FDP045N10A-F102 558
    • 1 $6.17
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    • 100 $2.78
    • 1000 $2.46
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    Newark FDP045N10A-F102 Bulk 3,566 1
    • 1 $6.06
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    • 100 $3.31
    • 1000 $2.82
    • 10000 $2.71
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    Avnet Silica FDP045N10A-F102 21 Weeks 50
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    EBV Elektronik FDP045N10A-F102 22 Weeks 50
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    onsemi FDI045N10A-F102

    Transistor: N-MOSFET; unipolar; 100V; 164A; Idm: 656A; 263W; I2PAK
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    TME FDI045N10A-F102 1
    • 1 $5.30
    • 10 $3.19
    • 100 $2.63
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    Avnet Americas FDI045N10A-F102 Tube 44 Weeks 1,000
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    • 1000 $2.09
    • 10000 $2.03
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    Mouser Electronics FDI045N10A-F102 2,590
    • 1 $6.47
    • 10 $4.24
    • 100 $3.11
    • 1000 $2.46
    • 10000 $2.46
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    Newark FDI045N10A-F102 Bulk 100
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    • 100 $2.70
    • 1000 $2.21
    • 10000 $2.12
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    Avnet Asia FDI045N10A-F102 44 Weeks 1,000
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    Avnet Silica FDI045N10A-F102 21 Weeks 50
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    EBV Elektronik FDI045N10A-F102 22 Weeks 50
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    045N10 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    IPA045N10N3

    Abstract: THV-150
    Contextual Info: 045N10N3 G OptiMOSTM3 Power-Transistor Product Summary Features • N-channel, normal level • Excellent gate charge x R DS on product (FOM) VDS 100 V RDS(on),max 4.5 mW ID 64 A • Very low on-resistance R DS(on) • 175 °C operating temperature • Pb-free lead plating; RoHS compliant


    Original
    ipa045n10n3pg-to220-fp045n10nthv-150 PDF

    045n10n

    Abstract: D100 TO-220 045n1 042N10N 045N10 IPP045N10 IPB042N10N3 G IEC61249-2-21 PG-TO220-3 042N10
    Contextual Info: IPB042N10N3 G 045N10N3 G 045N10N3 G OptiMOS 3 Power-Transistor Product Summary Features • N-channel, normal level • Excellent gate charge x R DS on product (FOM) V DS 100 V R DS(on),max (TO 263) 4.2 mΩ ID 100 A • Very low on-resistance R DS(on)


    Original
    ipb042n10n3ipi045n10n3ipp045n10n3iec61249-2-21+11pg-to263-3pg-to262-3pg-to220-3045n10nd100 to-220045n1042n10n045n10ipp045n10ipb042n10n3 g042n10 PDF

    045n10n

    Abstract: 042n10n D100 TO-220 IPI045N10N3 G 045N10 042N10 045n1 PG-TO220-3 IPP045N10N IPP045N10
    Contextual Info: IPB042N10N3 G 045N10N3 G 045N10N3 G OptiMOS 3 Power-Transistor Product Summary Features • N-channel, normal level • Excellent gate charge x R DS on product (FOM) V DS 100 V R DS(on),max (TO 263) 4.2 mΩ ID 100 A • Very low on-resistance R DS(on)


    Original
    ipb042n10n3ipi045n10n3ipp045n10n3pg-to263-3+11pg-to262-3pg-to220-3042n10n045n10nd100 to-220ipi045n10n3 g045n10042n10045n1ipp045n10nipp045n10 PDF

    045n10n

    Abstract: 045N10 045n1 IPA045N10N3 JESD22 DD-50
    Contextual Info: 045N10N3 G OptiMOSTM3 Power-Transistor Product Summary Features • N-channel, normal level • Excellent gate charge x R DS on product (FOM) V DS 100 V R DS(on),max 4.5 mΩ ID 64 A • Very low on-resistance R DS(on) • 175 °C operating temperature


    Original
    ipa045n10n3pg-to220-fp045n10n045n10+3045n1jesd22dd-50 PDF

    045N10

    Abstract: 045N10N
    Contextual Info: 045N10N3 G OptiMOSTM3 Power-Transistor Product Summary Features • N-channel, normal level • Excellent gate charge x R DS on product (FOM) VDS 100 V RDS(on),max 4.5 mW ID 64 A • Very low on-resistance R DS(on) • 175 °C operating temperature • Pb-free lead plating; RoHS compliant


    Original
    ipa045n10n3iec61249-2-21pg-to220-fp045n10n+1045n10 PDF