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    045N10 Search Results

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    045N10 Price and Stock

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    Goford Semiconductor GT045N10D5

    MOSFET N-CH 100V 120A DFN5*6-8L
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    DigiKey () GT045N10D5 Cut Tape 4,507 1
    • 1 $2.66
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    GT045N10D5 Digi-Reel 4,507 1
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    Infineon Technologies AG IPP045N10N3GXKSA1

    MOSFET N-CH 100V 100A TO220-3
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    DigiKey IPP045N10N3GXKSA1 Tube 1,223 1
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    Avnet Americas () IPP045N10N3GXKSA1 Bulk 1
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    IPP045N10N3GXKSA1 Tube 16 Weeks 500
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    Mouser Electronics IPP045N10N3GXKSA1 2,447
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    Newark IPP045N10N3GXKSA1 Bulk 1,038 1
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    TME IPP045N10N3GXKSA1 145 1
    • 1 $1.95
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    Rutronik IPP045N10N3GXKSA1 Tube 150 50
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    Chip One Stop IPP045N10N3GXKSA1 Tube 422 0 Weeks, 1 Days 1
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    EBV Elektronik IPP045N10N3GXKSA1 17 Weeks 500
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    IBS Electronics IPP045N10N3GXKSA1 1,000 50
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    Win Source Electronics IPP045N10N3GXKSA1 90,400
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    UMW IPP045N10N3G

    MOSFET N-CH 100V 100A TO220
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    DigiKey IPP045N10N3G Tube 1,000 1
    • 1 $2.99
    • 10 $1.94
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    • 1000 $1.00
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    Win Source Electronics IPP045N10N3G 90,500
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    UMW FDP045N10A

    MOSFET N-CH 100V 120A TO220
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    DigiKey FDP045N10A Tube 972 1
    • 1 $2.53
    • 10 $1.63
    • 100 $1.11
    • 1000 $0.82
    • 10000 $0.72
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    Infineon Technologies AG IPA045N10N3GXKSA1

    MOSFET N-CH 100V 64A TO220-FP
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    DigiKey IPA045N10N3GXKSA1 Tube 586 1
    • 1 $3.31
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    • 100 $1.50
    • 1000 $1.13
    • 10000 $1.09
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    Avnet Americas IPA045N10N3GXKSA1 Tube 16 Weeks 500
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    • 1000 $0.94
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    Newark IPA045N10N3GXKSA1 Bulk 113 1
    • 1 $3.64
    • 10 $3.31
    • 100 $2.75
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    TME IPA045N10N3GXKSA1 1
    • 1 $2.84
    • 10 $2.84
    • 100 $2.23
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    Ameya Holding Limited IPA045N10N3GXKSA1 10,500
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    EBV Elektronik IPA045N10N3GXKSA1 17 Weeks 500
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    IBS Electronics IPA045N10N3GXKSA1 1,000 50
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    • 1000 $1.05
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    Win Source Electronics IPA045N10N3GXKSA1 2,000
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    • 100 $1.53
    • 1000 $1.29
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    Find more 045N10 price and stock on Findchips.com

    045N10 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    IPA045N10N3

    Abstract: THV-150
    Contextual Info: 045N10N3 G OptiMOSTM3 Power-Transistor Product Summary Features • N-channel, normal level • Excellent gate charge x R DS on product (FOM) VDS 100 V RDS(on),max 4.5 mW ID 64 A • Very low on-resistance R DS(on) • 175 °C operating temperature • Pb-free lead plating; RoHS compliant


    Original     		IPA045N10N3 PG-TO220-FP 045N10N THV-150 PDF

    045n10n

    Abstract: D100 TO-220 045n1 042N10N 045N10 IPP045N10 IPB042N10N3 G IEC61249-2-21 PG-TO220-3 042N10
    Contextual Info: IPB042N10N3 G 045N10N3 G 045N10N3 G OptiMOS 3 Power-Transistor Product Summary Features • N-channel, normal level • Excellent gate charge x R DS on product (FOM) V DS 100 V R DS(on),max (TO 263) 4.2 mΩ ID 100 A • Very low on-resistance R DS(on)


    Original     		IPB042N10N3 IPI045N10N3 IPP045N10N3 IEC61249-2-21 PG-TO263-3 PG-TO262-3 PG-TO220-3 045n10n D100 TO-220 045n1 042N10N 045N10 IPP045N10 IPB042N10N3 G IEC61249-2-21 PG-TO220-3 042N10 PDF

    045n10n

    Abstract: 042n10n D100 TO-220 IPI045N10N3 G 045N10 042N10 045n1 PG-TO220-3 IPP045N10N IPP045N10
    Contextual Info: IPB042N10N3 G 045N10N3 G 045N10N3 G OptiMOS 3 Power-Transistor Product Summary Features • N-channel, normal level • Excellent gate charge x R DS on product (FOM) V DS 100 V R DS(on),max (TO 263) 4.2 mΩ ID 100 A • Very low on-resistance R DS(on)


    Original     		IPB042N10N3 IPI045N10N3 IPP045N10N3 PG-TO263-3 PG-TO262-3 PG-TO220-3 042N10N 045n10n 042n10n D100 TO-220 IPI045N10N3 G 045N10 042N10 045n1 PG-TO220-3 IPP045N10N IPP045N10 PDF

    045n10n

    Abstract: 045N10 045n1 IPA045N10N3 JESD22 DD-50
    Contextual Info: 045N10N3 G OptiMOSTM3 Power-Transistor Product Summary Features • N-channel, normal level • Excellent gate charge x R DS on product (FOM) V DS 100 V R DS(on),max 4.5 mΩ ID 64 A • Very low on-resistance R DS(on) • 175 °C operating temperature


    Original     		IPA045N10N3 PG-TO220-FP 045N10N 045n10n 045N10 045n1 JESD22 DD-50 PDF

    045N10

    Abstract: 045N10N
    Contextual Info: 045N10N3 G OptiMOSTM3 Power-Transistor Product Summary Features • N-channel, normal level • Excellent gate charge x R DS on product (FOM) VDS 100 V RDS(on),max 4.5 mW ID 64 A • Very low on-resistance R DS(on) • 175 °C operating temperature • Pb-free lead plating; RoHS compliant


    Original     		IPA045N10N3 IEC61249-2-21 PG-TO220-FP 045N10N 045N10 045N10N PDF