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    045N10 Search Results

    045N10 Datasheets (1)

    AK Semiconductor
    Part ECAD Model Manufacturer Description Datasheet Type PDF PDF Size Page count
    badge AKP045N10
    		AK Semiconductor N-channel MOSFET with 100V VDS, 125A ID, and low RDS(on) of 4.2mΩ (TO-220) or 4.0mΩ (TO-263) at VGS=10V, utilizing Super Trench II technology for high-frequency switching efficiency. Original PDF
    SF Impression Pixel

    045N10 Price and Stock

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    Diotec Semiconductor AG DI045N10PQ-AQ

    MOSFET N-CH 45A
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    Goford Semiconductor GT045N10D5

    MOSFET N-CH 100V 120A DFN5*6-8L
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    Infineon Technologies AG IPP045N10N3GXKSA1

    MOSFET N-CH 100V 100A TO220-3
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    onsemi FDP045N10A-F102

    MOSFET N-CH 100V 120A TO220-3
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    Infineon Technologies AG IPA045N10N3GXKSA1

    MOSFET N-CH 100V 64A TO220-FP
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    045N10 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    IPA045N10N3

    Abstract: THV-150
    Contextual Info: 045N10N3 G OptiMOSTM3 Power-Transistor Product Summary Features • N-channel, normal level • Excellent gate charge x R DS on product (FOM) VDS 100 V RDS(on),max 4.5 mW ID 64 A • Very low on-resistance R DS(on) • 175 °C operating temperature • Pb-free lead plating; RoHS compliant


    Original     		IPA045N10N3 PG-TO220-FP 045N10N THV-150 PDF

    045n10n

    Abstract: D100 TO-220 045n1 042N10N 045N10 IPP045N10 IPB042N10N3 G IEC61249-2-21 PG-TO220-3 042N10
    Contextual Info: IPB042N10N3 G 045N10N3 G 045N10N3 G OptiMOS 3 Power-Transistor Product Summary Features • N-channel, normal level • Excellent gate charge x R DS on product (FOM) V DS 100 V R DS(on),max (TO 263) 4.2 mΩ ID 100 A • Very low on-resistance R DS(on)


    Original     		IPB042N10N3 IPI045N10N3 IPP045N10N3 IEC61249-2-21 PG-TO263-3 PG-TO262-3 PG-TO220-3 045n10n D100 TO-220 045n1 042N10N 045N10 IPP045N10 IPB042N10N3 G IEC61249-2-21 PG-TO220-3 042N10 PDF

    045n10n

    Abstract: 042n10n D100 TO-220 IPI045N10N3 G 045N10 042N10 045n1 PG-TO220-3 IPP045N10N IPP045N10
    Contextual Info: IPB042N10N3 G 045N10N3 G 045N10N3 G OptiMOS 3 Power-Transistor Product Summary Features • N-channel, normal level • Excellent gate charge x R DS on product (FOM) V DS 100 V R DS(on),max (TO 263) 4.2 mΩ ID 100 A • Very low on-resistance R DS(on)


    Original     		IPB042N10N3 IPI045N10N3 IPP045N10N3 PG-TO263-3 PG-TO262-3 PG-TO220-3 042N10N 045n10n 042n10n D100 TO-220 IPI045N10N3 G 045N10 042N10 045n1 PG-TO220-3 IPP045N10N IPP045N10 PDF

    045n10n

    Abstract: 045N10 045n1 IPA045N10N3 JESD22 DD-50
    Contextual Info: 045N10N3 G OptiMOSTM3 Power-Transistor Product Summary Features • N-channel, normal level • Excellent gate charge x R DS on product (FOM) V DS 100 V R DS(on),max 4.5 mΩ ID 64 A • Very low on-resistance R DS(on) • 175 °C operating temperature


    Original     		IPA045N10N3 PG-TO220-FP 045N10N 045n10n 045N10 045n1 JESD22 DD-50 PDF

    045N10

    Abstract: 045N10N
    Contextual Info: 045N10N3 G OptiMOSTM3 Power-Transistor Product Summary Features • N-channel, normal level • Excellent gate charge x R DS on product (FOM) VDS 100 V RDS(on),max 4.5 mW ID 64 A • Very low on-resistance R DS(on) • 175 °C operating temperature • Pb-free lead plating; RoHS compliant


    Original     		IPA045N10N3 IEC61249-2-21 PG-TO220-FP 045N10N 045N10 045N10N PDF