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    038N12N Search Results

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    038N12N Price and Stock

    Infineon Technologies AG

    Infineon Technologies AG IPB038N12N3GATMA1

    MOSFET N-CH 120V 120A D2PAK
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    DigiKey () IPB038N12N3GATMA1 Reel 1,000
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    • 1000 $1.89
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    IPB038N12N3GATMA1 Cut Tape 1
    • 1 $4.10
    • 10 $2.43
    • 100 $2.37
    • 1000 $2.31
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    IPB038N12N3GATMA1 Digi-Reel 1
    • 1 $4.10
    • 10 $2.43
    • 100 $2.37
    • 1000 $2.31
    • 10000 $2.31
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    Avnet Americas IPB038N12N3GATMA1 Reel 1,000 16 Weeks 1,000
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    • 1000 $1.54
    • 10000 $1.44
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    Mouser Electronics IPB038N12N3GATMA1
    • 1 $3.82
    • 10 $2.40
    • 100 $2.35
    • 1000 $1.89
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    Newark () IPB038N12N3GATMA1 Cut Tape 859 1
    • 1 $3.31
    • 10 $3.31
    • 100 $3.31
    • 1000 $3.31
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    IPB038N12N3GATMA1 Reel 1,000
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    • 1000 $2.72
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    Rochester Electronics IPB038N12N3GATMA1 465 1
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    • 100 $1.89
    • 1000 $1.69
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    TME IPB038N12N3GATMA1 1
    • 1 $4.70
    • 10 $3.38
    • 100 $2.56
    • 1000 $2.21
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    Rutronik IPB038N12N3GATMA1 Reel 30,000 1,000
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    • 1000 $2.29
    • 10000 $1.77
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    IBS Electronics IPB038N12N3GATMA1 1,000
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    • 1000 $3.54
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    Infineon Technologies AG IPB038N12N3 G

    MOSFETs N-Ch 120V 120A D2PAK-2 OptiMOS 3
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    Mouser Electronics IPB038N12N3 G 5,466
    • 1 $4.33
    • 10 $3.40
    • 100 $2.75
    • 1000 $2.08
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    RS IPB038N12N3 G Bulk 1
    • 1 $4.53
    • 10 $4.08
    • 100 $3.85
    • 1000 $3.85
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    Infineon Technologies AG IPB038N12N3�G

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    Bristol Electronics IPB038N12N3�G 1,000
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    Infineon Technologies AG IPB038N12N3G

    OPTIMOS 3 POWER-TRANSISTOR Power Field-Effect Transistor, 120A I(D), 120V, 0.0038ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
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    ComSIT USA IPB038N12N3G 1,017
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    038N12N Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    Contextual Info: IPI041N12N3 G IPP041N12N3 G OptiMOSTM3 Power-Transistor 038N12N3 G Product Summary Features • N-channel, normal level • Excellent gate charge x R DS on product (FOM) V DS 120 V R DS(on),max (TO-263) 3.8 mΩ ID 120 A • Very low on-resistance R DS(on)


    Original     		IPI041N12N3 IPP041N12N3 IPB038N12N3 O-263) PG-TO263-3 PG-TO262-3 PG-TO220-3 PDF

    041N12N

    Abstract: 038N12N DD601 JESD22 PG-TO220-3 IPI041N12N3 G
    Contextual Info: IPI041N12N3 G IPP041N12N3 G OptiMOSTM3 Power-Transistor 038N12N3 G Product Summary Features • N-channel, normal level • Excellent gate charge x R DS on product (FOM) V DS 120 V R DS(on),max (TO-263) 3.8 mΩ ID 120 A • Very low on-resistance R DS(on)


    Original     		IPI041N12N3 IPP041N12N3 IPB038N12N3 O-263) PG-TO263-3 PG-TO262-3 PG-TO220-3 041N12N 038N12N DD601 JESD22 PG-TO220-3 IPI041N12N3 G PDF

    Contextual Info: IPI041N12N3 G IPP041N12N3 G OptiMOSTM3 Power-Transistor 038N12N3 G Product Summary Features • N-channel, normal level • Excellent gate charge x R DS on product (FOM) VDS 120 V RDS(on),max (TO-263) 3.8 mW ID 120 A • Very low on-resistance R DS(on)


    Original     		IPI041N12N3 IPP041N12N3 IPB038N12N3 O-263) PG-TO263-3 PG-TO262-3 PG-TO220-3 PDF