038N12N Search Results
038N12N Price and Stock
Infineon Technologies AG IPB038N12N3GATMA1MOSFET N-CH 120V 120A D2PAK |
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IPB038N12N3GATMA1 | Cut Tape | 556 | 1 |
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IPB038N12N3GATMA1 | Reel | 16 Weeks | 1,000 |
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IPB038N12N3GATMA1 | 1,616 |
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IPB038N12N3GATMA1 | Cut Tape | 949 | 1 |
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IPB038N12N3GATMA1 | 465 | 1 |
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IPB038N12N3GATMA1 | 1 |
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IPB038N12N3GATMA1 | Cut Tape | 2,638 | 0 Weeks, 1 Days | 1 |
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IPB038N12N3GATMA1 | 2,000 | 17 Weeks | 1,000 |
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IPB038N12N3GATMA1 | 2,000 | 1 |
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Infineon Technologies AG IPB038N12N3 GMOSFETs N-Ch 120V 120A D2PAK-2 OptiMOS 3 |
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IPB038N12N3 G | 5,690 |
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Infineon Technologies AG IPB038N12N3�G |
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IPB038N12N3�G | 1,000 |
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Infineon Technologies AG IPB038N12N3GOPTIMOS 3 POWER-TRANSISTOR Power Field-Effect Transistor, 120A I(D), 120V, 0.0038ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB |
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IPB038N12N3G | 1,017 |
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038N12N Datasheets Context Search
Catalog Datasheet | Type | Document Tags | |
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Contextual Info: IPI041N12N3 G IPP041N12N3 G OptiMOSTM3 Power-Transistor 038N12N3 G Product Summary Features • N-channel, normal level • Excellent gate charge x R DS on product (FOM) V DS 120 V R DS(on),max (TO-263) 3.8 mΩ ID 120 A • Very low on-resistance R DS(on) |
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IPI041N12N3 IPP041N12N3 IPB038N12N3 O-263) PG-TO263-3 PG-TO262-3 PG-TO220-3 | |
041N12N
Abstract: 038N12N DD601 JESD22 PG-TO220-3 IPI041N12N3 G
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IPI041N12N3 IPP041N12N3 IPB038N12N3 O-263) PG-TO263-3 PG-TO262-3 PG-TO220-3 041N12N 038N12N DD601 JESD22 PG-TO220-3 IPI041N12N3 G | |
Contextual Info: IPI041N12N3 G IPP041N12N3 G OptiMOSTM3 Power-Transistor 038N12N3 G Product Summary Features • N-channel, normal level • Excellent gate charge x R DS on product (FOM) VDS 120 V RDS(on),max (TO-263) 3.8 mW ID 120 A • Very low on-resistance R DS(on) |
Original |
IPI041N12N3 IPP041N12N3 IPB038N12N3 O-263) PG-TO263-3 PG-TO262-3 PG-TO220-3 |