041N12N Search Results
041N12N Price and Stock
| Infineon Technologies AG IPP041N12N3GXKSA1MOSFET N-CH 120V 120A TO220-3 | |||||||||||
| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
|   | IPP041N12N3GXKSA1 | Tube | 380 | 1 | 
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|   | IPP041N12N3GXKSA1 | Tube | 16 Weeks | 500 | 
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|   | IPP041N12N3GXKSA1 | 
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|   | IPP041N12N3GXKSA1 | Bulk | 1 | 
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|   | IPP041N12N3GXKSA1 | 1 | 
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|   | IPP041N12N3GXKSA1 | Tube | 100 | 50 | 
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|   | IPP041N12N3GXKSA1 | 3,370 | 
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|   | IPP041N12N3GXKSA1 | 1,500 | 50 | 
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|   | IPP041N12N3GXKSA1 | 1,870 | 
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| Infineon Technologies AG IPI041N12N3GAKSA1MOSFET N-CH 120V 120A TO262-3 | |||||||||||
| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
|   | IPI041N12N3GAKSA1 | Tube | 1 | 
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|   | IPI041N12N3GAKSA1 | Tube | 16 Weeks | 500 | 
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|   | IPI041N12N3GAKSA1 | 
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|   | IPI041N12N3GAKSA1 | 1 | 
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|   | IPI041N12N3GAKSA1 | 1 | 
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|   | IPI041N12N3GAKSA1 | 500 | 
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| Infineon Technologies AG IPP041N12N3 GMOSFETs N-Ch 120V 120A TO220-3 OptiMOS 3 | |||||||||||
| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
|   | IPP041N12N3 G | 1,170 | 
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| Infineon Technologies AG IPI041N12N3 GMOSFETs N-Ch 120V 120A I2PAK-3 OptiMOS 3 | |||||||||||
| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
|   | IPI041N12N3 G | 32 | 
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| Infineon Technologies AG IPP041N12N3GXKMOSFETs N-Ch 120V 120A TO220-3 OptiMOS 3 | |||||||||||
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|   | IPP041N12N3GXK | 
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041N12N Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
|---|---|---|---|
| Contextual Info: 041N12N3 G 041N12N3 G OptiMOSTM3 Power-Transistor IPB038N12N3 G Product Summary Features • N-channel, normal level • Excellent gate charge x R DS on product (FOM) V DS 120 V R DS(on),max (TO-263) 3.8 mΩ ID 120 A • Very low on-resistance R DS(on) | Original | IPI041N12N3 IPP041N12N3 IPB038N12N3 O-263) PG-TO263-3 PG-TO262-3 PG-TO220-3 | |
| 041N12N
Abstract: 038N12N DD601 JESD22 PG-TO220-3 IPI041N12N3 G 
 | Original | IPI041N12N3 IPP041N12N3 IPB038N12N3 O-263) PG-TO263-3 PG-TO262-3 PG-TO220-3 041N12N 038N12N DD601 JESD22 PG-TO220-3 IPI041N12N3 G | |
| Contextual Info: 041N12N3 G 041N12N3 G OptiMOSTM3 Power-Transistor IPB038N12N3 G Product Summary Features • N-channel, normal level • Excellent gate charge x R DS on product (FOM) VDS 120 V RDS(on),max (TO-263) 3.8 mW ID 120 A • Very low on-resistance R DS(on) | Original | IPI041N12N3 IPP041N12N3 IPB038N12N3 O-263) PG-TO263-3 PG-TO262-3 PG-TO220-3 |