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    040N06 Search Results

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    Infineon Technologies AG BSZ040N06LS5ATMA1

    MOSFET N-CH 60V 101A TSDSON
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    DigiKey () BSZ040N06LS5ATMA1 Digi-Reel 44,989 1
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    BSZ040N06LS5ATMA1 Tape & Reel 44,790 5,000
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    Avnet Americas BSZ040N06LS5ATMA1 Tape & Reel 40,000 18 Weeks 5,000
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    Mouser Electronics () BSZ040N06LS5ATMA1 7,234
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    BSZ040N06LS5ATMA1 213
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    Newark () BSZ040N06LS5ATMA1 Cut Tape 5,279 5
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    BSZ040N06LS5ATMA1 Tape & Reel 5,000
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    RS BSZ040N06LS5ATMA1 Bulk 5 3 Weeks 1
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    Rochester Electronics BSZ040N06LS5ATMA1 191,349 1
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    TME BSZ040N06LS5ATMA1 5,000
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    EBV Elektronik BSZ040N06LS5ATMA1 53 Weeks 5,000
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    Win Source Electronics BSZ040N06LS5ATMA1 27,850
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    onsemi NVLJWD040N06CLTAG

    MOSFET 2N-CH 60V 5.5A 6WDFNW
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    DigiKey () NVLJWD040N06CLTAG Cut Tape 5,089 1
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    NVLJWD040N06CLTAG Digi-Reel 5,089 1
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    NVLJWD040N06CLTAG Tape & Reel 3,000 3,000
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    Avnet Americas NVLJWD040N06CLTAG Tape & Reel 17 Weeks 3,000
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    Mouser Electronics () NVLJWD040N06CLTAG 2,506
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    NVLJWD040N06CLTAG 1,806
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    Newark NVLJWD040N06CLTAG Tape & Reel 3,000
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    TME NVLJWD040N06CLTAG 1
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    Avnet Silica NVLJWD040N06CLTAG 18 Weeks 3,000
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    EBV Elektronik NVLJWD040N06CLTAG 19 Weeks 3,000
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    Flip Electronics NVLJWD040N06CLTAG 12,000
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    Rochester Electronics LLC FDP040N06

    MOSFET N-CH 60V 120A TO220-3
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    DigiKey FDP040N06 Tube 800 142
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    Infineon Technologies AG IPA040N06NM5SXKSA1

    MOSFET N-CH 60V 72A TO220
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    DigiKey IPA040N06NM5SXKSA1 Tube 560 1
    • 1 $2.56
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    Avnet Americas IPA040N06NM5SXKSA1 Tube 18 Weeks 1,000
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    Mouser Electronics () IPA040N06NM5SXKSA1 421
    • 1 $2.56
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    IPA040N06NM5SXKSA1 421
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    Newark IPA040N06NM5SXKSA1 Bulk 1
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    Rochester Electronics IPA040N06NM5SXKSA1 10,166 1
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    TME IPA040N06NM5SXKSA1 1
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    EBV Elektronik IPA040N06NM5SXKSA1 19 Weeks 500
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    Infineon Technologies AG IPP040N06N3GXKSA1

    MOSFET N-CH 60V 90A TO220-3
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    DigiKey IPP040N06N3GXKSA1 Tube 529 1
    • 1 $2.37
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    Avnet Americas IPP040N06N3GXKSA1 Tube 500 8 Weeks 1
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    Mouser Electronics () IPP040N06N3GXKSA1 523
    • 1 $2.39
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    IPP040N06N3GXKSA1 513
    • 1 $2.37
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    Newark IPP040N06N3GXKSA1 Bulk 373 1
    • 1 $3.06
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    Rochester Electronics IPP040N06N3GXKSA1 742,671 1
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    TME IPP040N06N3GXKSA1 352 1
    • 1 $2.22
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    EBV Elektronik IPP040N06N3GXKSA1 1,000 19 Weeks 500
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    040N06 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    040n06n

    Abstract: 037N06N IEC61249-2-21 PG-TO220-3 PG-TO262-3
    Contextual Info: Type IPB037N06N3 G 040N06N3 G 040N06N3 G OptiMOS 3 Power-Transistor Product Summary Features V DS 60 V • for sync. rectification, drives and dc/dc SMPS R DS on ,max (SMD) 3.7 mΩ • Excellent gate charge x R DS(on) product (FOM) ID 90 A previous engineering


    Original     		IPB037N06N3 IPI040N06N3 IPP040N06N3 IPP04xN06N IPI04xN06N IPB04xN06N IEC61249-2-21 040n06n 037N06N IEC61249-2-21 PG-TO220-3 PG-TO262-3 PDF

    Contextual Info: Type 040N06N OptiMOSTM Power-Transistor Features Product Summary • Optimized for high performance SMPS, e.g. sync. rec. VDS 60 V • 100% avalanche tested RDS on ,max 4.0 mW • Superior thermal resistance ID 80 A • N-channel • Qualified according to JEDEC for target applications


    Original     		IPP040N06N IEC61249-2-21 PG-TO220-3 040N06N PDF

    040n06n

    Contextual Info: Type 040N06N OptiMOSTM Power-Transistor Features Product Summary • Optimized for high performance SMPS, e.g. sync. rec. • 100% avalanche tested • Superior thermal resistance • N-channel 1 • Qualified according to JEDEC for target applications


    Original     		IPP040N06N IEC61249-2-21 PG-TO220-3 040N06N 50K/W 040n06n PDF

    Contextual Info: MOSFET MetalOxideSemiconductorFieldEffectTransistor OptiMOSTM OptiMOSTMPower-Transistor,60V 040N06N DataSheet Rev.2.1 Final PowerManagement&Multimarket OptiMOSTMPower-Transistor,60V 040N06N 1Description TO-220-FP Features • .


    Original     		IPA040N06N O-220-FP IEC61249-2-21 PDF

    040n06n

    Abstract: 037N06N 040n06 d90 smd JESD22 PG-TO220-3
    Contextual Info: IPB037N06N3 G Type 040N06N3 G 040N06N3 G OptiMOS 3 Power-Transistor Product Summary Features • for sync. rectification, drives and dc/dc SMPS • Excellent gate charge x R DS on product (FOM) V DS 60 V R DS(on),max (SMD) 3.7 mΩ ID 90 A • Very low on-resistance R DS(on)


    Original     		IPB037N06N3 IPI040N06N3 IPP040N06N3 IPP04xN06N IPI04xN06N IPB04xN06N PG-TO263-3 040n06n 037N06N 040n06 d90 smd JESD22 PG-TO220-3 PDF

    040n06n

    Contextual Info: Type 040N06N OptiMOSTM Power-Transistor Features Product Summary • Optimized for high performance SMPS, e.g. sync. rec. VDS 60 V • 100% avalanche tested RDS on ,max 4.0 mW • Superior thermal resistance ID 80 A • N-channel 1) • Qualified according to JEDEC for target applications


    Original     		IPP040N06N IEC61249-2-21 PG-TO220-3 040N06N 50K/W 040n06n PDF