040N06 Search Results

040n06n

Abstract: 037N06N IEC61249-2-21 PG-TO220-3 PG-TO262-3
Contextual Info: Type IPB037N06N3 G 040N06N3 G 040N06N3 G OptiMOS 3 Power-Transistor Product Summary Features V DS 60 V • for sync. rectification, drives and dc/dc SMPS R DS on ,max (SMD) 3.7 mΩ • Excellent gate charge x R DS(on) product (FOM) ID 90 A previous engineering

Contextual Info: Type 040N06N OptiMOSTM Power-Transistor Features Product Summary • Optimized for high performance SMPS, e.g. sync. rec. VDS 60 V • 100% avalanche tested RDS on ,max 4.0 mW • Superior thermal resistance ID 80 A • N-channel • Qualified according to JEDEC for target applications

040n06n

Contextual Info: Type 040N06N OptiMOSTM Power-Transistor Features Product Summary • Optimized for high performance SMPS, e.g. sync. rec. • 100% avalanche tested • Superior thermal resistance • N-channel 1 • Qualified according to JEDEC for target applications

Contextual Info: MOSFET MetalOxideSemiconductorFieldEffectTransistor OptiMOSTM OptiMOSTMPower-Transistor,60V 040N06N DataSheet Rev.2.1 Final PowerManagement&Multimarket OptiMOSTMPower-Transistor,60V 040N06N 1Description TO-220-FP Features • .

040n06n

Abstract: 037N06N 040n06 d90 smd JESD22 PG-TO220-3
Contextual Info: IPB037N06N3 G Type 040N06N3 G 040N06N3 G OptiMOS 3 Power-Transistor Product Summary Features • for sync. rectification, drives and dc/dc SMPS • Excellent gate charge x R DS on product (FOM) V DS 60 V R DS(on),max (SMD) 3.7 mΩ ID 90 A • Very low on-resistance R DS(on)

040n06n

Contextual Info: Type 040N06N OptiMOSTM Power-Transistor Features Product Summary • Optimized for high performance SMPS, e.g. sync. rec. VDS 60 V • 100% avalanche tested RDS on ,max 4.0 mW • Superior thermal resistance ID 80 A • N-channel 1) • Qualified according to JEDEC for target applications