INFINEON MARKING CODE L2 Search Results

CSC74

Contextual Info: BCR402U LED Driver • Supplies stable bias current even at low battery voltage 4 3 5 • Ideal for stabilizing bias current of LEDs 2 6 1 • Negative temperature coefficient protects LEDs against thermal overload • Suitable for 12V automotive applications

infineon marking L2s

Abstract: CSC74
Contextual Info: BCR402U LED Driver • Supplies stable bias current even at low battery voltage 4 3 5 • Ideal for stabilizing bias current of LEDs 2 6 1 • Negative temperature coefficient protects LEDs against thermal overload • Suitable for 12V automotive applications

BCR402UE6182

Abstract: infineon marking L2s infineon marking code L2s
Contextual Info: BCR402UE6182 LED Driver Preliminary data • Supplies stable bias current even at low battery voltage 4 3 5 • Ideal for stabilizing bias current of LEDs 2 6 1 • Negative temperature coefficient protects LEDs against thermal overload • Suitable for 12V automotive applications,

infineon marking L2s

Abstract: infineon marking code L2s CSC74
Contextual Info: BCR402U LED Driver • Supplies stable bias current even at low battery voltage 4 3 5 • Ideal for stabilizing bias current of LEDs 2 6 1 • Negative temperature coefficient protects LEDs against thermal overload • Suitable for 12V automotive applications

marking FC

Contextual Info: BFR380L3 NPN Silicon RF Transistor Preliminary data
High current capability and low figure for 3 wide dynamic range application
Low voltage operation
Ideal for low phase noise oscillators up to 3.5 GHz 1 2
Low noise figure: 1.1 dB at 1.8 GHz ESD: Electrostatic discharge sensitive device, observe handling precaution!

igbt welding machine scheme

Abstract: ikw40n120h3 aircon l1 smd diode schottky code marking SJ transistor marking code 12W SOT-23 24V application with ice3ar0680jz induction cooker FAULT FINDING IPW65R041 IGW40N60H3 SPW55N80C3
Contextual Info: Power Management Selection Guide 2012 [ www.infineon.com/powermanagement ] [ www.infineon.com/PowerManagementICs ] We create Power Management We live Energy Efficiency Infineon, an innovation leader for Power Semiconductor and Energy Efficiency technologies is continually developing and

Contextual Info: BFR193L3 NPN Silicon RF Transistor Preliminary data
For low noise, high-gain amplifiers up to 2 GHz 3
For linear broadband amplifiers
fT = 8 GHz 1 F = 1.2 dB at 900 MHz 2 ESD: Electrostatic discharge sensitive device, observe handling precaution! Type

marking FA

Contextual Info: BFR340L3 NPN Silicon RF Transistor Preliminary data
Low voltage/ Low current operation 3
Transition frequency of 14 GHz
High insertion gain 1
Ideal for low current amplifiers and oscillators 2 ESD: Electrostatic discharge sensitive device, observe handling precaution!

SMD MARKING CODE f2

Contextual Info: BGA231N7 Silicon Germanium GNSS Low Noise Amplifier Data Sheet Revision 1.0, 2013-01-29 RF & Protection Devices Edition 2013-01-29 Published by Infineon Technologies AG 81726 Munich, Germany 2013 Infineon Technologies AG All Rights Reserved. Legal Disclaimer

marking FA

Abstract: BFR340T
Contextual Info: BFR340T NPN Silicon RF Transistor* • Low voltage/ low current operation • Transition frequency of 14 GHz 2 3 1 • High insertion gain • Ideal for low current amplifiers and oscillators * Short term description ESD Electrostatic discharge sensitive device, observe handling precaution!

Contextual Info: BFR181T NPN Silicon RF Transistor* • For low noise, high-gain broadband amplifiers at collector currents from 0.5 mA to 12 mA 2 3 1 • fT = 8 GHz, F = 0.9 dB at 900 MHz * Short term description ESD Electrostatic discharge sensitive device, observe handling precaution!

Contextual Info: BFR183T NPN Silicon RF Transistor* • For low noise, high-gain broadband amplifiers at collector currents from 2 mA to 30 mA 2 3 1 • fT = 8 GHz, F = 0.9 dB at 900 MHz * Short term description ESD Electrostatic discharge sensitive device, observe handling precaution!

TRANSISTOR MARKING NK

Abstract: BCR108T BFR949T SC75 SC79 SCD80 BFR94
Contextual Info: BFR949T NPN Silicon RF Transistor • For low noise, high-gain broadband amplifiers at collector currents from 1 mA to 20 mA 2 3 • fT = 9 GHz, F = 1 dB at 1 GHz 1 • Pb-free RoHS compliant package 1) • Qualified according AEC Q101 ESD (Electrostatic discharge) sensitive device, observe handling precaution!

ua 722 fc

Abstract: BCR847BF MARKING rks BFR94
Contextual Info: BFR949F NPN Silicon RF Transistor Preliminary data
For low noise, high-gain broadband amplifiers at 2 3 collector currents from 1 mA to 20 mA
fT = 9 GHz 1 F = 1 dB at 1 GHz ESD: Electrostatic discharge sensitive device, observe handling precaution! Type

BCR402U

Abstract: infineon marking L2s bcr402 402U AN077 AN101 BC817SU BCX68-25 SC74 adjustable current source LED
Contextual Info: BCR402U LED Driver Features • LED drive current of 20mA • Output current adjustable up to 65mA with external resistor 4 3 5 • Supply voltage up to 40V 2 6 • Easy paralleling of drivers to increase current 1 • Low voltage overhead of 1.4V • High current accuracy at supply voltage variation

Germanium power

Contextual Info: Data Sheet, Version 1.2, March 2006 BGA615L7 Silicon Germanium GPS Low Noise Amplifier Automotive and Industrial Silicon Discretes N e v e r s t o p t h i n k i n g . Edition 2006-03-27 Published by Infineon Technologies AG, St.-Martin-Strasse 53, D-81541 München

infineon marking L2

Abstract: BFR193L3
Contextual Info: BFR193L3 NPN Silicon RF Transistor* • For low noise, high-gain amplifiers up to 2 GHz • For linear broadband amplifiers 3 1 • fT = 8 GHz, F = 1 dB at 900 MHz 2 * Short term description ESD Electrostatic discharge sensitive device, observe handling precaution!

BFR193L3

Abstract: BFR380L3 marking FC
Contextual Info: BFR380L3 NPN Silicon RF Transistor* • High current capability and low figure for wide dynamic range application 3 1 • Low voltage operation 2 • Ideal for low phase noise oscillators up to 3.5 GHz • Low noise figure: 1.1 dB at 1.8 GHz * Short term description

BFR949T

Abstract: MA457 MARKING C6 BFR94
Contextual Info: BFR949T NPN Silicon RF Transistor • For low noise, high-gain broadband amplifiers at collector currents from 1 mA to 20 mA 2 3 1 • fT = 9 GHz, F = 1 dB at 1 GHz ESD Electrostatic discharge sensitive device, observe handling precaution! Type BFR949T Marking

BFR360T

Abstract: BCR108T E6327 SC75 TRANSISTOR MARKING NK infineon marking code L2 fbs MARKING TRANSISTOR transistor marking code 325
Contextual Info: BFR360T NPN Silicon RF Transistor 3 Preliminary data
Low voltage/ low current operation
For low noise amplifiers
For Oscillators up to 3.5 GHz and Pout > 10 dBm 2
Low noise figure: 1.0 dB at 1.8 GHz 1 VPS05996 ESD: Electrostatic discharge sensitive device, observe handling precaution!

Infineon Technologies transistor 4 ghz

Abstract: BFR193L3 infineon marking code L2 1B marking transistor INFINEON transistor marking C5 MARKING TRANSISTOR
Contextual Info: BFR193L3 NPN Silicon RF Transistor* • For low noise, high-gain amplifiers up to 2 GHz • For linear broadband amplifiers 3 • fT = 8 GHz, F = 1 dB at 900 MHz 1 2 • Pb-free RoHS compliant package 1) • Qualified according AEC Q101 * Short term description

Infineon Technologies transistor 4 ghz

Abstract: BFR193L3 BFR340L3 BFR34* transistor marking FA
Contextual Info: BFR340L3 NPN Silicon RF Transistor* • Low voltage/ Low current operation • Transition frequency of 14 GHz 3 • High insertion gain 1 2 • Ideal for low current amplifiers and oscillators • Pb-free RoHS compliant package 1) • Qualified according AEC Q101

C5 MARKING TRANSISTOR

Abstract: infineon marking code L1 Infineon Technologies transistor 4 ghz BFR193L3 BFR380L3 INFINEON transistor marking MARKING CODE 21E infineon marking code L2
Contextual Info: BFR380L3 NPN Silicon RF Transistor* • High current capability and low figure for wide dynamic range application 3 • Low voltage operation 1 2 • Ideal for low phase noise oscillators up to 3.5 GHz • Low noise figure: 1.1 dB at 1.8 GHz • Pb-free RoHS compliant package 1)

BGA915

Contextual Info: BGA915N7 Silicon Germanium GPS Low Noise Amplifier Data Sheet Revision 4.0, 2011-03-23 RF & Protection Devices Edition 2011-03-23 Published by Infineon Technologies AG 81726 Munich, Germany 2011 Infineon Technologies AG All Rights Reserved. Legal Disclaimer