IMS1800 Search Results

lt 6655

Contextual Info: IMS1800 CMOS High Performance 256K x 1 Static RAM I mos FEATURES DESCRIPTION • • • • • • • • • The INMOS IMS1800 is a high performance 256Kx1 CMOS Static RAM. The IMS1800 provides maximum density and speed enhancements with the additional

IMS1800E-25

Abstract: IMS1800M IMS1800P-25 IMS1800S-25 IMS1800W-25
Contextual Info: IMS1800 CMOS High Performance 256K x 1 Static RAM i irnos DESCRIPTION FEATURES IN MOS' Very High Speed CMOS Advanced Process -1 .2 Micron Design Rules 256K x 1 Bit Organization 2 5 .3 0 , 35 and 45 ns Address Access Times 2 5 .3 0 , 35 and 45 ns C hip Enable Access Times

Contextual Info: IMS1800M CMOS High Performance 256K x 1 Static RAM MIL-STD-883C mos Advance Information DESCRIPTION FEATURES • INMOS' Very High Speed CMOS • Advanced Process -1.2 Micron Design Rules • 256K x 1 Bit Organization • 30, 35 and 45 ns Address Access Times

IMS1800M

Abstract: IMS1800P-25 IMS1800S-25
Contextual Info: IMS1800 CMOS High Performance 256K x 1 Static RAM Preliminary FEATURES D E S C R IP T IO N • • • • • • • • • • • • The IN M O S IM S1800 is a high p e rfo rm a n ce 2 56K x 1 C M O S static RAM. The IM S1800 provides m a xim u m density and speed e n h a n ce m e n ts w ith the additional

inmos static ram

Abstract: IMS1800M
Contextual Info: IMS1800M CMOS High Performance 256K x 1 Static RAM MIL-STD-883C Advance Information mos DESCRIPTION FEATURES • INMOS' Very High Speed CMOS • Advanced Process -1 .2 Micron Design Rules • 256K x 1 Bit Organization • 30, 35 and 45 ns Address Access Times

Contextual Info: •■■■ . ■"■■■■■■ IMS1800M CMOS High Performance 256K x 1 Static RAM MIL-STD-883C IH IH HH SSSSSSSS "■■■■" ] m K S A dvance Information DESCRIPTION FEATURES • INMOS' Very High Speed CMOS > Advanced Process -1.2 Micron Design Rules

Contextual Info: IMS1800 CMOS High Performance 256K x 1 Static RAM inmos DESCRIPTION FEATURES • • • • • • • • • INMOS' Very High Speed CMOS Advanced Process -1 .2 Micron Design Rules 256K x 1 Bit Organization 2 5 ,3 0 ,3 5 and 45 ns Address Access Times 25, 30, 35 and 45 ns C hip Enable Access Times

IMS1630

Abstract: HY62256 SGS-Thomson HITACHI HM6116 DALLAS SEMICONDUCTOR Ds1235 MK4503 hm6116 cross UPD4361 SSM7188 MK4501
Contextual Info: CROSS REFERENCE AMD SGS-THOMSON Group DALLAS Semiconductor SGS-THOMSON Group AM2147 IMS1203 DS2009 MK4501/H01 AM2148/9 IMS1223 DS2010 MK45H02 AM2167 IMS1403 DS2011 MK4503/H03 AM2168 IMS1423 or MK41 H68 DS2012 MK45H04 AM9126 MK6116 DS1210 MK48Z02 AM99C68 IMS1423 or MK41 H68

MKB6116

Abstract: MKB4501 IMS1630 RAM MK6116 MK48Z18BU IMS1420 MK48Z02BU
Contextual Info: SELECTION GUIDE ZEROPOW ERS ORGANISATION DESCRIPTION PART NUMBER ICCma SPEEDns ACTIVE TTL mA@ns STBY CMOS STBY VCC TEMP RANGE PACKAGE -2 K X 8 MK48Z02 120,150,200,250 90 3 1 5V + 10 -5% 0 to + 70°C P DIP 24 -2 K X 8 UL-CERTIFIED MK48Z02BU 120,150,200,250

K4505

Abstract: 1601l 4Kx4 SRAM MK48T87B Z30A SRAM 2kx8 sram IMS1630 256KX1 MK41S80
Contextual Info: ALPHANUMERICAL INDEX unless otherwise specified all Static RAMs listed are produced in CMOS technology Part Nuraöer Organization 4Kx1 IMS1203 ( 4Kx1 IMS1203M , 1Kx4 IMS1223 1Kx4 IMS1223M ' 16Kx1 IMS1400M 16Kx1 IMS1403 ' IMS1403M/LM f 16Kx1 IM S1420M A 4Kx4

STATIC RAM 8464

Abstract: IMS1433 SSM6116 IMS1630 SSM6171 SSM7188 hitachi selection guide SSM7164 hm6264 ic 6116 ram
Contextual Info: 16K Product S e le c tio n -C ro s s Reference Guide 16K Static RAM — Product Selection Typical Power mW Maximum Speed (ns) Part No/'» L7C167 Description Packages Available121 Com. Mil. Oper. Inactive Pins 8 10 135 75 20 DIP, LCC SOIC (Gull-Wing) SOJ (J-Lead)

256x16 eprom

Abstract: GS-2I5-D12 GS-D250M PHDIP28 GS-2I12-9 512X8 from 128x8 ram L293D shield gs-2i5 PHDIP24 ESM1602B
Contextual Info: SELECTION GUIDE For detailed information on products referred to in the selection guide but not included as datasheet in this book, please refer to the databook indicated in column "DB" SGS-THOMSON DATABOOKS ORDER CODE DB a 4 B IT MCU FAMILY ET9400 DBET9400ST/1

cm6207

Abstract: KM61257-35 24PIN IDT71257L-45 IDT71257S-25 IDT71257S-35 IDT71257S-45 IDT71257S-70 IMS1800-25 IMS1800-35
Contextual Info: 107 2 5 6 K fâKÏËffl tt £ rc> X TAAC max ns TCAC max (ns) CMOS 'i TOE max (ns) -y TOH + TOD min sax (ns) (ns) y S t a t i c / TWP (ns) RAM ( 2 6 2 1 4 4 x 1 ) ft tt m. TDS TDH •in min (ns) (ns) (ns) TWD T»R V D D or V C C (ns) I DD max ■ax (V) 2 4 P I N

Contextual Info: K 0 A KAOHSIUNG 3bE D m SD4b0fl2 OODDDlt □ • K O A ' f - H u - o \ t - u\.<\ - n - DV u / SEMICONDUCTOR DEVICES * MPU • ROM M bit 16K 32K EPROM M2716 • M 2732 M2764A TS27C64A M27128A M 27256 M27C256B M27512 M27C512 M27C1000 M27C1001 M27C1024 2KX8