IGBT ABB Search Results

GT60M303 application

Abstract: GT60M303
Contextual Info: GT60M303 TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT GT60M303 HIGH POWER SWITCHING APPLICATIONS Unit: mm Fourth generation IGBT FRD included between emitter and collector Enhancement mode type High speed IGBT : tf = 0.25 s TYP. FRD : trr = 0.7 s (TYP.)

GT60M303 application

Abstract: GT60M303 circuit igbt failure rate
Contextual Info: GT60M303 TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT GT60M303 HIGH POWER SWITCHING APPLICATIONS Unit: mm z Fourth generation IGBT z FRD included between emitter and collector z Enhancement mode type z High speed IGBT : tf = 0.25µs TYP.

bsm 25 gd 1200 n2

Abstract: bsm 75 gd 120 n2 siemens mosfet BSM 50 siemens igbt bsm 50 gd 120 n2 Thyristor Tabelle BSM15GD BSM15GD120DN 250068 BSM15GD120DN2
Contextual Info: Technische Angaben Technical Information 1 Übersicht IGBT-Module 1 Overview IGBT Modules Hochsperrende spannungsgesteuerte Bipolar-Module Insulated Gate Bipolar Transistor modules Produktpalette Product Range IGBT-Module mit den Spannungen 600 V, 1200 V und 1700 V und im Strombereich

GT60M303

Abstract: GT60M303 circuit toshiba code igbt TOSHIBA IGBT TOSHIBA IGBT GT60M303
Contextual Info: GT60M303 TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT GT60M303 Unit: mm HIGH POWER SWITCHING APPLICATIONS Fourth generation IGBT FRD included between emitter and collector Enhancement mode type High speed IGBT : tf = 0.25µs TYP. FRD : trr = 0.7µs (TYP.)

50N322

Abstract: GT50N322 50N322A GT50N322A TOSHIBA IGBT DATA BOOK gt50n
Contextual Info: GT50N322A TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT50N322A Voltage Resonance Inverter Switching Application Fifth Generation IGBT • FRD included between emitter and collector • Enhancement mode type • High speed IGBT : tf = 0.10 s typ. (IC = 60 A)

GT60M303 application

Abstract: GT60M303 gt60m303 application notes
Contextual Info: GT60M303 TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT GT60M303 HIGH POWER SWITCHING APPLICATIONS Unit: mm z Fourth generation IGBT z FRD included between emitter and collector z Enhancement mode type z High speed IGBT : tf = 0.25 s TYP.

50N322

Abstract: 50N322A
Contextual Info: GT50N322A TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT50N322A Voltage Resonance Inverter Switching Application Fifth Generation IGBT • FRD included between emitter and collector • Enhancement mode type • High speed IGBT : tf = 0.10 s typ. (IC = 60 A)

60M324

Contextual Info: GT60M324 TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT60M324 Consumer Application Voltage Resonance Inverter Switching Application Sixth Generation IGBT • FRD included between emitter and collector • Enhancement mode type • High speed IGBT : tf = 0.11 s typ. (IC = 60A)

gt60n321

Contextual Info: GT60N321 TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT60N321 High Power Switching Applications Fourth Generation IGBT Unit: mm • FRD included between emitter and collector • Enhancement mode type • High speed IGBT : tf = 0.25 µs typ. (IC = 60 A)

Contextual Info: GT60N321 TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT60N321 High-Power Switching Applications Fourth Generation IGBT Unit: mm • FRD included between emitter and collector • Enhancement mode type • High speed IGBT : tf = 0.25 s typ. (IC = 60 A)

Contextual Info: GT60N321 TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT60N321 High-Power Switching Applications Fourth Generation IGBT Unit: mm • FRD included between emitter and collector • Enhancement mode type • High speed IGBT : tf = 0.25 s typ. (IC = 60 A)

GT60N321

Abstract: GT60N321 circuits TOSHIBA IGBT DATA BOOK
Contextual Info: GT60N321 TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT60N321 High-Power Switching Applications Fourth Generation IGBT Unit: mm • FRD included between emitter and collector • Enhancement mode type • High speed IGBT : tf = 0.25 s typ. (IC = 60 A)

Contextual Info: GT60M324 TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT60M324 Consumer Application Voltage Resonance Inverter Switching Application Sixth Generation IGBT • FRD included between emitter and collector • Enhancement mode type • High speed IGBT : tf = 0.11 s typ. (IC = 60A)

GT60N32

Abstract: GT60N321
Contextual Info: GT60N321 TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT60N321 High Power Switching Applications Fourth Generation IGBT Unit: mm • FRD included between emitter and collector • Enhancement mode type • High speed IGBT : tf = 0.25 µs typ. (IC = 60 A)

60M324

Abstract: GT60M324 60M32
Contextual Info: GT60M324 TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT60M324 Consumer Application Voltage Resonance Inverter Switching Application Sixth Generation IGBT • FRD included between emitter and collector • Enhancement mode type • High speed IGBT : tf = 0.11 s typ. (IC = 60A)

abb traction motor

Abstract: diode 6.5 kv 5SMY 12M4500 76E-12 IGBT 6500 V 86M1280 5SMY86J1280 ABB IGBT 76J1280 76M12
Contextual Info: IGBT and Diode dies ABB Semiconductors ABB IGBT and Diode dies from stateof-the-art SPT planar technology platform. Fig.1 Un-sawn wafer, sawn wafer die on frame and pick-and-place dies in waffle-packs ABB Semiconductor has a well established reputation in the

BT diode

Abstract: ECONOPACK mounting instructions bsm 25 gd 1200 n2 bsm 75 gd 120 n2 bsm 50 gd 120 n2 calculation of IGBT snubber siemens igbt BSM 200 GA 120 BSM15GD120DN2 diode bym 26 siemens igbt BSM 100
Contextual Info: Technische Angaben Technical Information SIEMENS 1 Übersicht IGBT-Module 1 O verview IG BT Modules Hochsperrende spannungsgesteuerte Bipolar-Module Insulated Gate Bipolar Transistor modules Produktpalette Product Range IGBT-Module mit den Spannungen 600 V,

Contextual Info: GT40T321 TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT40T321 Consumer Application Voltage Resonance Inverter Switching Application Sixth Generation IGBT • FRD included between emitter and collector • Enhancement mode type • High speed

40t321

Abstract: GT40T321 gt40t
Contextual Info: GT40T321 TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT40T321 Consumer Application Voltage Resonance Inverter Switching Application Sixth Generation IGBT • FRD included between emitter and collector • Enhancement mode type • High speed

GT40T321

Contextual Info: GT40T321 TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT40T321 Consumer Application Voltage Resonance Inverter Switching Application Sixth Generation IGBT • FRD included between emitter and collector • Enhancement mode type • High speed

GT30J301

Contextual Info: GT30J301 TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT GT30J301 Unit: mm HIGH POWER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS Third-generation IGBT Enhancement mode type High speed : tf = 0.30µs Max. : VCE (sat) = 2.7V (Max.)

10j312

Abstract: GT10J312 marking code SM diode
Contextual Info: GT10J312,GT10J312 SM TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT GT10J312, GT10J312(SM) HIGH POWER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS Unit: mm Third-generation IGBT Enhancement mode type High speed : tf = 0.30µs (Max.)

15j321

Abstract: TRANSISTOR 15J321 GT15J321 TRANSISTOR 10003 TOSHIBA IGBT DATA BOOK 2-10R1C marking 6_a
Contextual Info: GT15J321 TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT15J321 High Power Switching Applications Fast Switching Applications • Fourth-generation IGBT • Fast switching FS • Enhancement mode type • High speed: tf = 0.03 µs (typ.

TRANSISTOR 15J321

Abstract: 15j321 RG105
Contextual Info: GT15J321 TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT15J321 High Power Switching Applications Fast Switching Applications • Fourth-generation IGBT • Fast switching FS • Enhancement mode type • High speed: tf = 0.03 µs (typ.