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    Advanced Thermal Solutions Inc ATS-10G-131-C1-R0

    PUSH PIN HS ASMBLY,COARSE-PITCH,XCUT, HO - Trays (Alt: ATS-10G-131-C1-R0)
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    Avnet Americas ATS-10G-131-C1-R0 Tray 8 Weeks 25
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    Mouser Electronics ATS-10G-131-C1-R0
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    Advanced Thermal Solutions Inc ATS-10G-131-C3-R0

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    Mouser Electronics ATS-10G-131-C3-R0
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    Advanced Thermal Solutions Inc ATS-10G-131-C2-R0

    PUSH PIN HS ASMBLY,COARSE-PITCH,XCUT, HO - Trays (Alt: ATS-10G-131-C2-R0)
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    Avnet Americas ATS-10G-131-C2-R0 Tray 8 Weeks 25
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    Mouser Electronics ATS-10G-131-C2-R0
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    Amphenol Corporation CWDM-SFP10G-1310-80-C

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    Avnet Americas CWDM-SFP10G-1310-80-C Bulk 2 Weeks 50
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    Mouser Electronics CWDM-SFP10G-1310-80-C
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    Amphenol Corporation CWDM-SFP10G-1310-40-C

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    Avnet Americas CWDM-SFP10G-1310-40-C Bulk 2 Weeks 50
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    Mouser Electronics CWDM-SFP10G-1310-40-C
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    10G131 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    10G131

    Contextual Info: 10G131 TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT 10G131 Strobe Flash Applications Unit: mm • Supplied in compact and thin package requires only a small mounting area • 5th generation trench gate structure IGBT • Enhancement-mode


    Original     		gt10g13110g131 PDF

    Contextual Info: 10G131 TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT 10G131 Strobe Flash Applications Unit: mm • 5th generation trench gate structure IGBT • Enhancement-mode • 4-V gate drive voltage: VGE = 4.0 V (min) (@IC = 200 A) • Peak collector current: IC = 200 A (max)


    Original     		gt10g131 PDF

    10g131

    Abstract: GT10G131 RG110 ic 3 51 2A
    Contextual Info: 10G131 東芝伝導度変調型電界効果トランジスタ シリコンNチャネルIGBT 10G131 ○ 直列式自動調光ストロボ用 • 薄型面実装外囲器です。 単位: mm : 樹脂厚み 1.5 ± 0.2 mm • 第 5 世代 トレンチゲート構造 品です。


    Original     		gt10g13120070701-ja10g131rg110+1ic 3 51 2a PDF

    10G131

    Contextual Info: 10G131 TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT 10G131 Strobe Flash Applications Unit: mm • 5th generation trench gate structure IGBT • Enhancement-mode • 4-V gate drive voltage: VGE = 4.0 V (min) (@IC = 200 A) • Peak collector current: IC = 200 A (max)


    Original     		gt10g13110g131 PDF

    Contextual Info: 10G131 TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT 10G131 Strobe Flash Applications Unit: mm • 5th generation trench gate structure IGBT • Enhancement-mode • 4-V gate drive voltage: VGE = 4.0 V (min) (@IC = 200 A) • Peak collector current: IC = 200 A (max)


    Original     		gt10g131 PDF

    GT10G131

    Abstract: 10G131
    Contextual Info: 10G131 TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT 10G131 Strobe Flash Applications Unit: mm • Supplied in compact and thin package requires only a small mounting area • 5th generation trench gate structure IGBT • Enhancement-mode


    Original     		gt10g13110g131 PDF

    10g131

    Abstract: ic MARKING QG GT10G131 TOSHIBA IGBT DATA BOOK NOR GATE IC A3170
    Contextual Info: 10G131 TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT 10G131 Unit: mm Strobe Flash Applications • Supplied in compact and thin package requires only a small mounting area • 5th generation trench gate structure IGBT • Enhancement-mode


    Original     		gt10g13110g131ic marking qgtoshiba igbt data book+2nor gate ica3170 PDF