IGBT 900V 60A Search Results
IGBT 900V 60A Result Highlights (5)
| Part | ECAD Model | Manufacturer | Description | Download | Buy |
|---|---|---|---|---|---|
| GT50J123 |
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IGBT, 600 V, 59 A, TO-3P(N) | Datasheet | ||
| GT30J122A |
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IGBT, 600 V, 30 A, TO-3P(N) | Datasheet | ||
| GT20J121 |
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IGBT, 600 V, 20 A, TO-220SIS | Datasheet | ||
| GT30J121 |
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IGBT, 600 V, 30 A, TO-3P(N) | Datasheet | ||
| GT20J341 |
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IGBT, 600 V, 20 A, Built-in Diodes, TO-220SIS | Datasheet |
IGBT 900V 60A Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
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60N90Contextual Info: Preliminary Technical Information IXYH60N90C3 XPTTM 900V IGBT GenX3TM VCES IC110 VCE sat tfi(typ) High-Speed IGBT for 20-50 kHz Switching = = ≤ = 900V 60A 2.7V 88ns TO-247 AD Symbol Test Conditions VCES VCGR TJ TJ VGES VGEM Maximum Ratings = 25°C to 175°C |
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IXYH60N90C3 IC110 O-247 60N90C3 60N90 | |
60N90Contextual Info: Advance Technical Information 900V XPTTM IGBT GenX3TM VCES IC110 VCE sat tfi(typ) IXYH60N90C3 High-Speed IGBT for 20-50 kHz Switching = = ≤ = 900V 60A 2.7V 88ns TO-247 AD Symbol Test Conditions Maximum Ratings VCES VCGR TJ = 25°C to 175°C TJ = 25°C to 175°C, RGE = 1MΩ |
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IC110 IXYH60N90C3 O-247 60N90C3 60N90 | |
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Contextual Info: Advance Technical Information IXYN80N90C3H1 900V XPTTM IGBT GenX3TM w/ Diode High-Speed IGBT for 20-50 kHz Switching VCES IC90 VCE sat tfi(typ) = = ≤ = 900V 70A 2.7V 86ns E SOT-227B, miniBLOC E153432 Symbol Test Conditions Maximum Ratings VCES VCGR TJ = 25°C to 150°C |
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IXYN80N90C3H1 OT-227B, E153432 IF110 | |
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Contextual Info: Preliminary Technical Information IXYH40N90C3D1 900V XPTTM IGBT GenX3TM w/ Diode VCES IC110 VCE sat tfi(typ) High-Speed IGBT for 20-50 kHz Switching = = ≤ = 900V 40A 2.5V 110ns TO-247 AD Symbol Test Conditions Maximum Ratings VCES VCGR TJ = 25°C to 150°C |
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IXYH40N90C3D1 IC110 110ns O-247 IF110 | |
40N90C3D1Contextual Info: Advance Technical Information 900V XPTTM IGBT GenX3TM w/ Diode VCES IC110 VCE sat tfi(typ) IXYH40N90C3D1 High-Speed IGBT for 20-50 kHz Switching = = ≤ = 900V 40A 2.5V 110ns TO-247 AD Symbol Test Conditions Maximum Ratings VCES VCGR TJ = 25°C to 150°C |
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IC110 IXYH40N90C3D1 110ns O-247 IF110 40N90C3D1 | |
IXYH40N90C3D1Contextual Info: Advance Technical Information IXYH40N90C3D1 900V XPTTM IGBT GenX3TM w/ Diode VCES IC110 VCE sat tfi(typ) High-Speed IGBT for 20-50 kHz Switching = = ≤ = 900V 40A 2.5V 110ns TO-247 AD Symbol Test Conditions Maximum Ratings VCES VCGR TJ = 25°C to 150°C |
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IXYH40N90C3D1 IC110 110ns O-247 IF110 062in. IXYH40N90C3D1 | |
60N90
Abstract: IXYH60N90C3 60n90c3
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IXYH60N90C3 IC110 O-247 062in. 60N90C3 60N90 IXYH60N90C3 | |
80n90
Abstract: 80N90C3 IXYT80N90C3 IXYH80N90C3
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IXYT80N90C3 IXYH80N90C3 IC110 O-268 062in. O-247) O-268 O-247 80N90C3 80n90 IXYH80N90C3 | |
80n90Contextual Info: Advance Technical Information 900V XPTTM IGBTs GenX3TM VCES IC110 VCE sat tfi(typ) IXYT80N90C3 IXYH80N90C3 High-Speed IGBT for 20-50 kHz Switching = = ≤ = 900V 80A 2.7V 86ns TO-268 (IXYT) G E Symbol Test Conditions Maximum Ratings VCES VCGR TJ = 25°C to 175°C |
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IC110 IXYT80N90C3 IXYH80N90C3 O-268 80N90C3 80n90 | |
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Contextual Info: Preliminary Technical Information IXYT80N90C3 IXYH80N90C3 XPTTM 900V IGBTs GenX3TM VCES IC110 VCE sat tfi(typ) High-Speed IGBT for 20-50 kHz Switching = = ≤ = 900V 80A 2.7V 86ns TO-268 (IXYT) G E Symbol Test Conditions Maximum Ratings VCES VCGR TJ = 25°C to 175°C |
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IXYT80N90C3 IXYH80N90C3 IC110 O-268 80N90C3 | |
APT15GP90B
Abstract: T0-247
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APT15GP90B O-247 APT15GP90B T0-247 | |
APT15GP90BDF1
Abstract: APT15GP90K
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APT15GP90K O-220 APT15GP90BDF1 APT15GP90K | |
Fast Recovery Bridge Rectifier, 60A, 600V
Abstract: APT10035LLL APT64GA90LD30 MIC4452
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APT64GA90LD30 shifte106) Fast Recovery Bridge Rectifier, 60A, 600V APT10035LLL APT64GA90LD30 MIC4452 | |
APT15GP90BDF1
Abstract: T0-247
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APT15GP90BDF1 O-247 APT15GP90BDF1 T0-247 | |
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diode schottky 600vContextual Info: APT43GA90BD30 APT43GA90SD30 900V High Speed PT IGBT B TO POWER MOS 8 is a high speed Punch-Through switch-mode IGBT. Low Eoff is achieved through leading technology silicon design and lifetime control processes. A reduced Eoff VCE(ON) tradeoff results in superior efficiency compared to other IGBT technologies. Low |
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APT43GA90BD30 APT43GA90SD30 diode schottky 600v | |
APT15GP90KContextual Info: APT15GP90K APT15GP90K TYPICAL PERFORMANCE CURVES 900V POWER MOS 7 IGBT TO-220 The POWER MOS 7® IGBT is a new generation of high voltage power IGBTs. Using Punch Through Technology this IGBT is ideal for many high frequency, high voltage switching applications and has been optimized for high frequency |
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APT15GP90K O-220 APT15GP90K | |
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Contextual Info: APT15GP90K APT15GP90K TYPICAL PERFORMANCE CURVES 900V POWER MOS 7 IGBT TO-220 The POWER MOS 7® IGBT is a new generation of high voltage power IGBTs. Using Punch Through Technology this IGBT is ideal for many high frequency, high voltage switching applications and has been optimized for high frequency |
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APT15GP90K O-220 APT15GP | |
IGBT 900v 60a
Abstract: Fast Recovery Bridge Rectifier, 60A, 600V MIC4452 APT64GA90B2D30 APT64GA90LD30
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APT64GA90LD30 APT64GA90B2D30 IGBT 900v 60a Fast Recovery Bridge Rectifier, 60A, 600V MIC4452 APT64GA90B2D30 APT64GA90LD30 | |
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Contextual Info: APT64GA90LD30 APT64GA90B2D30 900V APT64GA90LD30 High Speed PT IGBT POWER MOS 8 is a high speed Punch-Through switch-mode IGBT. Low Eoff is achieved through leading technology silicon design and lifetime control processes. A reduced Eoff VCE ON tradeoff results in superior efficiency compared to other IGBT technologies. Low |
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APT64GA90LD30 APT64GA90B2D30 APT64GA90LD30 APT64GA90B2D30 O-247 | |
APT43GA90B
Abstract: APT43GA90BD30 MIC4452 RECTIFIER DIODE 1000A schottky
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APT43GA90BD30 APT43GA90B APT43GA90B APT43GA90BD30 MIC4452 RECTIFIER DIODE 1000A schottky | |
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Contextual Info: APT15GP90BDF1 TYPICAL PERFORMANCE CURVES APT15GP90BDF1 900V POWER MOS 7 IGBT TO-247 ® The POWER MOS 7 IGBT is a new generation of high voltage power IGBTs. Using Punch Through Technology this IGBT is ideal for many high frequency, high voltage switching applications and has been optimized for high frequency |
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APT15GP90BDF1 O-247 | |
APT64GA90B2D30
Abstract: IGBT 900v 60a Fast Recovery Bridge Rectifier, 60A, 600V APT10035LLL APT64GA90LD30 MIC4452 1000A MOS
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APT64GA90B2D30 APT64GA90LD30 APT64GA90B2D30 IGBT 900v 60a Fast Recovery Bridge Rectifier, 60A, 600V APT10035LLL APT64GA90LD30 MIC4452 1000A MOS | |
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Contextual Info: APT15GP90K APT15GP90K TYPICAL PERFORMANCE CURVES 900V POWER MOS 7 IGBT TO-220 The POWER MOS 7® IGBT is a new generation of high voltage power IGBTs. Using Punch Through Technology this IGBT is ideal for many high frequency, high voltage switching applications and has been optimized for high frequency |
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APT15GP90K O-220 APT15GP90 | |
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Contextual Info: APT15GP90B TYPICAL PERFORMANCE CURVES APT15GP90B 900V POWER MOS 7 IGBT TO-247 ® The POWER MOS 7 IGBT is a new generation of high voltage power IGBTs. Using Punch Through Technology this IGBT is ideal for many high frequency, high voltage switching applications and has been optimized for high frequency |
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APT15GP90B O-247 APT15GP4 | |