APT43GA90SD30 Search Results
APT43GA90SD30 Datasheets (1)
| Part | ECAD Model | Manufacturer | Description | Datasheet Type | PDF Size | Page count | |
|---|---|---|---|---|---|---|---|
| APT43GA90SD30 |
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Insulated Gate Bipolar Transistor - Power MOS 8; Package: D3; BV(CES) (V): 900; VCE(sat) (V): 2.5; IC (A): 43; | Original | 247.13KB | 9 |
APT43GA90SD30 Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
|---|---|---|---|
diode schottky 600vContextual Info: APT43GA90BD30 APT43GA90SD30 900V High Speed PT IGBT B TO POWER MOS 8 is a high speed Punch-Through switch-mode IGBT. Low Eoff is achieved through leading technology silicon design and lifetime control processes. A reduced Eoff VCE(ON) tradeoff results in superior efficiency compared to other IGBT technologies. Low |
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apt43ga90bd30apt43ga90sd30diode schottky 600v | |
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Contextual Info: APT43GA90BD30 APT43GA90SD30 900V High Speed PT IGBT B TO POWER MOS 8 is a high speed Punch-Through switch-mode IGBT. Low Eoff is achieved through leading technology silicon design and lifetime control processes. A reduced Eoff VCE(ON) tradeoff results in superior efficiency compared to other IGBT technologies. Low |
Original |
apt43ga90bd30apt43ga90sd30typ11 | |
RECTIFIER DIODE 1000A schottky
Abstract: Fast Recovery Bridge Rectifier, 60A, 600V APT43GA90BD30 APT43GA90SD30 MIC4452 SD30
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apt43ga90bd30apt43ga90sd30typi67rectifier diode 1000a schottky+3 |