APT15GP Search Results
APT15GP Datasheets (33)
| Part | ECAD Model | Manufacturer | Description | Datasheet Type | PDF Size | Page count | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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| APT15GP60B | Advanced Power Technology | POWER MOS 7 IGBT | Original | 88.94KB | 6 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| APT15GP60B | Microsemi | Insulated Gate Bipolar Transistor-PT High Speed | Original | 196.17KB | 6 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| APT15GP60BDF1 | Advanced Power Technology | POWER MOS 7 IGBT | Original | 128.98KB | 9 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| APT15GP60BDLG | Microsemi | Insulated Gate Bipolar Transistor - Resonant Mode; Package: TO-247CS; BV(CES) (V): 600; VCE(sat) (V): 2.2; IC (A): 25; | Original | 203.51KB | 9 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| APT15GP60BDQ1 | Advanced Power Technology | MOSFET | Original | 256.94KB | 9 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| APT15GP60BDQ1 | Microsemi | Insulated Gate Bipolar Transistor-PT High Speed | Original | 256.93KB | 9 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| APT15GP60BDQ1G | Advanced Power Technology | IGBTs - Single, Discrete Semiconductor Products, IGBT 600V 56A 250W TO247 | Original | 9 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| APT15GP60BDQ1G | Microsemi | Discrete Semiconductor Products - Transistors - IGBTs - Single - IGBT 600V 56A 250W TO247 | Original | 258.2KB | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| APT15GP60BG | Advanced Power Technology | IGBTs - Single, Discrete Semiconductor Products, IGBT 600V 56A 250W TO247 | Original | 6 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| APT15GP60BG | Microsemi | Discrete Semiconductor Products - Transistors - IGBTs - Single - IGBT 600V 56A 250W TO247 | Original | 263.27KB | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| APT15GP60BSC | Unknown | High Voltage, 600V 56A, IGBT N-Type | Original | 215.83KB | 8 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| APT15GP60K | Advanced Power Technology | POWER MOS 7 IGBT | Original | 88.67KB | 6 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| APT15GP60K | Microsemi | Insulated Gate Bipolar Transistor-PT High Speed | Original | 195.96KB | 6 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| APT15GP60KG | Advanced Power Technology | IGBTs - Single, Discrete Semiconductor Products, IGBT 600V 56A 250W TO220 | Original | 6 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| APT15GP60KG | Microsemi | Discrete Semiconductor Products - Transistors - IGBTs - Single - IGBT 600V 56A 250W TO220 | Original | 197.26KB | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| APT15GP60S | Microsemi | POWER MOS 7 IGBT | Original | 261.81KB | 6 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| APT15GP90B | Advanced Power Technology | POWER MOS 7 IGBT | Original | 59.87KB | 5 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| APT15GP90B | Microsemi | Insulated Gate Bipolar Transistor-PT High Speed | Original | 397.91KB | 6 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| APT15GP90B | Unknown | High Voltage, 900V 43A, IGBT N-Type | Original | 164KB | 6 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| APT15GP90BDF1 | Advanced Power Technology | POWER MOS 7 IGBT | Original | 62.47KB | 6 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
APT15GP Price and Stock
Microchip Technology Inc APT15GP60BGTrans IGBT Chip N-CH 600V 56A 250000mW 3-Pin(3+Tab) TO-247 Tube |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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APT15GP60BG |
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APT15GP60BG | Tube | 20 Weeks | 110 |
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APT15GP60BG | Bulk | 250 |
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APT15GP60BG | Tube | 28 Weeks |
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APT15GP60BG | 21 Weeks | 1 |
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Microchip Technology Inc APT15GP90BDQ1GIGBT Transistor - PT Type - 900 V - 43 A - 3.9V Vce(on) (Max) @ 15V Vge 15A Ic - 250W - 60nC Gate Charge - TO-247-3 Variant Package - Through Hole. |
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APT15GP90BDQ1G |
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APT15GP90BDQ1G | 57 | 9 |
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APT15GP90BDQ1G | Tube | 20 Weeks | 90 |
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APT15GP90BDQ1G | Bulk | 250 |
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APT15GP90BDQ1G | Tube | 28 Weeks |
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APT15GP90BDQ1G | 90 |
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Microchip Technology Inc APT15GP60BDQ1GTrans IGBT Chip N-CH 600V 56A 250000mW 3-Pin(3+Tab) TO-247 Tube |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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APT15GP60BDQ1G |
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APT15GP60BDQ1G | Tube | 20 Weeks | 100 |
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APT15GP60BDQ1G | 10 |
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APT15GP60BDQ1G | Tube | 28 Weeks |
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APT15GP60BDQ1G | 22 Weeks | 1 |
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APT15GP60BDQ1G | 21 Weeks | 1 |
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APT15GP60BDQ1G | 7,582 |
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Microsemi Corporation (now Microchip) APT15GP60BGTrans IGBT Chip N-CH 600V 56A 250W 3-Pin(3+Tab) TO-247 Tube |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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APT15GP60BG | 80 | 1 |
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Buy Now | ||||||
Microsemi Corporation APT15GP60BG |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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APT15GP60BG | 64 |
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| APT15GP60BG | 64 |
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APT15GP Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
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Contextual Info: APT15GP90B TYPICAL PERFORMANCE CURVES APT15GP90B 900V POWER MOS 7 IGBT TO-247 ® The POWER MOS 7 IGBT is a new generation of high voltage power IGBTs. Using Punch Through Technology this IGBT is ideal for many high frequency, high voltage switching applications and has been optimized for high frequency |
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apt15gp90bo-247apt154 | |
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Contextual Info: APT15GP60K 600V POWER MOS 7 IGBT TO-220 The POWER MOS 7® IGBT is a new generation of high voltage power IGBTs. Using Punch Through Technology this IGBT is ideal for many high frequency, high voltage switching applications and has been optimized for high frequency |
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apt15gp60ko-220 | |
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Contextual Info: APT15GP90B G 900V TYPICAL PERFORMANCE CURVES APT15GP90B APT15GP90BG* *G Denotes RoHS Compliant, Pb Free Terminal Finish. POWER MOS 7 IGBT ® TO -2 47 The POWER MOS 7® IGBT is a new generation of high voltage power IGBTs. Using Punch Through Technology this IGBT is ideal for many high frequency, high voltage switching |
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apt15gp90bapt15gp90bg | |
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Contextual Info: APT15GP90K G 900V TYPICAL PERFORMANCE CURVES APT15GP90K APT15GP90KG* *G Denotes RoHS Compliant, Pb Free Terminal Finish. POWER MOS 7 IGBT ® TO-220 The POWER MOS 7® IGBT is a new generation of high voltage power IGBTs. Using Punch Through Technology this IGBT is ideal for many high frequency, high voltage switching |
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apt15gp90kapt15gp90kgo-220 | |
IC 7428 datasheet
Abstract: APT15GP60BDF1 T0-247
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apt15gp60bdf1o-247ic 7428 datasheett0-247 | |
IC 7413
Abstract: APT15GP60B T0-247
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apt15gp60bo-247ic 7413t0-247 | |
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Contextual Info: APT15GP60BDL G 600V, 15A, VCE(ON) = 2.2V Typical Resonant Mode Combi IGBT The POWER MOS 7® IGBT used in this resonant mode combi is a new generation of high voltage power IGBTs. Using Punch Through Technology this IGBT is ideal for many high frequency, high voltage switching applications and has been optimized for high frequency |
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apt15gp60bdlo-247 | |
APT15GP90K
Abstract: APT15GP90KG
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apt15gp90kapt15gp90kgo-220 | |
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Contextual Info: APT15GP90BDF1 TYPICAL PERFORMANCE CURVES APT15GP90BDF1 900V POWER MOS 7 IGBT TO-247 ® The POWER MOS 7 IGBT is a new generation of high voltage power IGBTs. Using Punch Through Technology this IGBT is ideal for many high frequency, high voltage switching applications and has been optimized for high frequency |
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apt15gp90bdf1o-247 | |
15gp60
Abstract: 15gp60b 15gp60bd
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apt15gp60ko-2202o-220ac15gp60+2 | |
APT15GP90BDF1
Abstract: APT15GP90K
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apt15gp90ko-220apt15gp90bdf1 | |
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Contextual Info: APT15GP60BDQ1 APT15GP60BDQ1 TYPICAL PERFORMANCE CURVES 600V POWER MOS 7 IGBT TO-247 ® The POWER MOS 7 IGBT is a new generation of high voltage power IGBTs. Using Punch Through Technology this IGBT is ideal for many high frequency, high voltage switching applications and has been optimized for high frequency |
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apt15gp60bdq1o-247 | |
IC 7449
Abstract: IC 7449 datasheet 7449 diode 7449 APT15GP60BDQ1 APT6017LLL T0-247
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apt15gp60bdq1o-247ic 7449ic 7449 datasheet+4 | |
IC 7413
Abstract: Diode UJ APT15GP60B APT15GP60S
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apt15gp60bapt15gp60sic 7413diode uj | |
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Contextual Info: APT15GP60BDL G 600V, 15A, VCE(ON) = 2.2V Typical Resonant Mode Combi IGBT The POWER MOS 7® IGBT used in this resonant mode combi is a new generation of high voltage power IGBTs. Using Punch Through Technology this IGBT is ideal for many high frequency, high voltage switching applications and has been optimized for high frequency |
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apt15gp60bdlo-247 | |
APT15GP90BG
Abstract: APT15GP90B
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Original |
apt15gp90bapt15gp90bg | |
APT15GP90BDQ1G
Abstract: APT15GP90BDQ1
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apt15gp90bdq1apt15gp90bdq1g | |
APT15GP90B
Abstract: T0-247
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apt15gp90bo-247t0-247 | |
APT15GP60BDLContextual Info: APT15GP60BDL G 600V, 15A, VCE(ON) = 2.2V Typical Resonant Mode Combi IGBT The POWER MOS 7® IGBT used in this resonant mode combi is a new generation of high voltage power IGBTs. Using Punch Through Technology this IGBT is ideal for many high frequency, high voltage switching applications and has been optimized for high frequency |
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apt15gp60bdl | |
APT15GP90BDF1
Abstract: IGBT 900v 60a
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apt15gp90bdf1o-247igbt 900v 60a | |
IC 7413 datasheet
Abstract: IC 7413 IC 7413 DATA SHEET APT15GP60B APT15GP60S
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apt15gp60bapt15gp60sic 7413 datasheetic 7413+1 | |
APT15GP90BDF1
Abstract: T0-247
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apt15gp90bdf1o-247t0-247 | |
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Contextual Info: APT15GP60BDL G 600V, 15A, VCE(ON) = 2.2V Typical Resonant Mode Combi IGBT The POWER MOS 7® IGBT used in this resonant mode combi is a new generation of high voltage power IGBTs. Using Punch Through Technology this IGBT is ideal for many high frequency, high voltage switching applications and has been optimized for high frequency |
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apt15gp60bdl | |
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Contextual Info: APT15GP90K APT15GP90K TYPICAL PERFORMANCE CURVES 900V POWER MOS 7 IGBT TO-220 The POWER MOS 7® IGBT is a new generation of high voltage power IGBTs. Using Punch Through Technology this IGBT is ideal for many high frequency, high voltage switching applications and has been optimized for high frequency |
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apt15gp90ko-220apt15gp90 | |