APT64GA90B2D30 Search Results
APT64GA90B2D30 Datasheets (1)
| Part | ECAD Model | Manufacturer | Description | Datasheet Type | PDF Size | Page count | |
|---|---|---|---|---|---|---|---|
| APT64GA90B2D30 | Microsemi | Insulated Gate Bipolar Transistor - Power MOS 8; Package: TO-247 [B]; BV(CES) (V): 900; VCE(sat) (V): 3.1; IC (A): 64; | Original | 231.92KB | 9 |
APT64GA90B2D30 Price and Stock
Microchip Technology Inc APT64GA90B2D30- Rail/Tube (Alt: APT64GA90B2D30) |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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APT64GA90B2D30 | Tube | 50 |
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APT64GA90B2D30 | Bulk | 250 |
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APT64GA90B2D30 | Tube | 20 Weeks |
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APT64GA90B2D30 | 22 Weeks | 1 |
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APT64GA90B2D30 | 21 Weeks | 1 |
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APT64GA90B2D30 Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
|---|---|---|---|
APT64GA90B2D30
Abstract: IGBT 900v 60a Fast Recovery Bridge Rectifier, 60A, 600V APT10035LLL APT64GA90LD30 MIC4452 1000A MOS
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Original |
apt64ga90b2d30apt64ga90ld30igbt 900v 60afast recovery bridge rectifier, 60a, 600v+3 | |
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Contextual Info: APT64GA90LD30 APT64GA90B2D30 900V APT64GA90LD30 High Speed PT IGBT POWER MOS 8 is a high speed Punch-Through switch-mode IGBT. Low Eoff is achieved through leading technology silicon design and lifetime control processes. A reduced Eoff VCE ON tradeoff results in superior efficiency compared to other IGBT technologies. Low |
Original |
apt64ga90ld30apt64ga90b2d30o-247 | |
IGBT 900v 60a
Abstract: Fast Recovery Bridge Rectifier, 60A, 600V MIC4452 APT64GA90B2D30 APT64GA90LD30
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Original |
apt64ga90ld30apt64ga90b2d30igbt 900v 60afast recovery bridge rectifier, 60a, 600v+1 | |
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Contextual Info: APT64GA90LD30 APT64GA90B2D30 900V APT64GA90LD30 High Speed PT IGBT POWER MOS 8 is a high speed Punch-Through switch-mode IGBT. Low Eoff is achieved through leading technology silicon design and lifetime control processes. A reduced Eoff VCE ON tradeoff results in superior efficiency compared to other IGBT technologies. Low |
Original |
apt64ga90ld30apt64ga90b2d30o-247 | |
SP6-P
Abstract: N-channel MOSFET 800v 50a to-247 SMPS 1000w IGBT REFERENCE DESIGN DRF1400 45A, 1200v n-channel npt series igbt APTES80DA120C3G APT35DL120HJ semiconductors cross reference IGBT triple modules 100A 2000W mosfet power inverter
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Original |
10f-asp6-pn-channel mosfet 800v 50a to-247smps 1000w igbt reference design+7 | |
SOT-227 lead frame
Abstract: 5kw smps full bridge S.M.P.S PLAD15KP APT10026L2FLLG 5kw SMPS full bridge Fast Recovery Rectifiers mx gp 043 SMBx6.0A DO215AA PFC 1.5kw 1.5ke series
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Original |
mil-prf-19500so-268o-220o-247+12 | |
LE79Q2281
Abstract: 1N6761-1 2N2369AU 2N2907AUB BR17 datasheet transistor SI 6822 Dimming LED aplications Dimming LED Driver aplications GC4600 IC ZL70572
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le79q22811n6761-12n2369au2n2907aub+6 | |
VRF2933FL
Abstract: VRF164FL ARF463AP1 Non - Isolated Buck, application DRF1301
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ms5-001-14vrf2933flvrf164flarf463ap1+2 |