IGBT 600V 40A DIODE Search Results

20N60C3DR

Abstract: 20N60C3D HGTG20N60C3DR 20n60c3 INTEPOWER LD26 RURP1560
Contextual Info: HGTG20N60C3DR 40A, 600V, Rugged, UFS Series N-Channel IGBT with Anti-Parallel Ultrafast Diode November 1996 Features Description • 40A, 600V at TC = 25oC This family of IGBTs was designed for optimum performance in the demanding world of motor control operation as well as

g20n60b3d

Abstract: HGTG20N60B3D MOSFET 40A 600V LD26 RHRP3060
Contextual Info: S E M I C O N D U C T O R HGTG20N60B3D 40A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode January 1997 Features Package • 40A, 600V at TC = 25oC JEDEC STYLE TO-247 • Typical Fall Time . . . . . . . . . . . . . . . . . . . . . . . 140ns at 150oC

G20N60B3D

Abstract: HGTG20N60B3D LD26 RHRP3060 G20N60B3
Contextual Info: HGTG20N60B3D Semiconductor 40A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode November 1997 Features Description • 40A, 600V at TC = 25oC • Hyperfast Anti-Parallel Diode The HGTG20N60B3D is a MOS gated high voltage switching device combining the best features of MOSFETs and

GW40NC60WD

Abstract: STGW40NC60WD JESD97 icl 298
Contextual Info: STGW40NC60WD N-channel 40A - 600V - TO-247 Very fast switching PowerMESH IGBT General features Type VCES STGW40NC60WD 600V IC VCE sat (Max)@ 25°C @100°C <2.5V 40A • Low CRES / CIES ratio (no cross conduction susceptibility) ■ High frequency operation

STGW40NC60WD

Abstract: icl 298 HF IGBT GW40NC60WD ic MARKING QG JESD97
Contextual Info: STGW40NC60WD N-channel 40A - 600V - TO-247 Very fast switching PowerMESH IGBT General features Type VCES STGW40NC60WD 600V IC VCE sat (Max)@ 25°C @100°C <2.5V 40A • Low CRES / CIES ratio (no cross conduction susceptibility) ■ High frequency operation

GW39NC60

Contextual Info: STGW39NC60VD N-channel 40A - 600V - TO-247 Very fast switching PowerMESH IGBT Features Type VCES VCE sat (Max)@ 25°C IC @100°C <2.5V 40A STGW39NC60VD 600V • Low CRES / CIES ratio (no cross conduction susceptibility) ■ High frequency operation ■

schematic diagram "induction heating"

Abstract: schematic diagram induction heating diagram induction schematic diagram induction
Contextual Info: STGW39NC60VD N-channel 40A - 600V - TO-247 Very fast switching PowerMESH IGBT Features Type VCES VCE sat (Max)@ 25°C IC @100°C <2.5V 40A STGW39NC60VD 600V • Low CRES / CIES ratio (no cross conduction susceptibility) ■ High frequency operation ■

STGW30NC60VD

Abstract: 600V 20A 50KHz GW30NC60VD JESD97 schematic diagram UPS IGBT 15V 20A SMPS circuit diagram
Contextual Info: STGW30NC60VD N-channel 40A - 600V - TO-247 Very fast switching PowerMESH IGBT General features Type VCES STGW30NC60VD 600V VCE sat (Max)@ 25°C IC @100°C <2.5V 40A • High current capability ■ High frequency operation up to 50KHz ■ Very soft ultra fast recovery antiparallel diode

STGW30NC60VD

Abstract: GW30NC60VD JESD97
Contextual Info: STGW30NC60VD N-channel 40A - 600V - TO-247 Very fast switching PowerMESH IGBT General features Type VCES STGW30NC60VD 600V VCE sat (Max)@ 25°C IC @100°C <2.5V 40A • High current capability ■ High frequency operation up to 50KHz ■ Very soft ultra fast recovery antiparallel diode

20n60b3d

Abstract: G20N60B
Contextual Info: HGTG20N60B3D 40A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode Package Features • 40A, 600V at T c = +25°C JEDEC STYLE TO-247 • Typical Fall Time - 140ns at +150°C • Short Circuit Rated • Low Conduction Loss • Hyperfast Anti-Parallel Diode

W39NC60VD

Contextual Info: STGW39NC60VD N-channel 40A - 600V - TO-247 Very fast switching PowerMESH IGBT PRELIMINARY DATA General features Type VCES VCE sat (Max)@ 25°C IC @100°C <2.5V 40A STGW39NC60VD 600V • Low CRES / CIES ratio (no cross conduction susceptibility) ■ High frequency operation

Contextual Info: STGW39NC60VD N-channel 40A - 600V - TO-247 Very fast switching PowerMESH IGBT PRELIMINARY DATA General features Type VCES VCE sat (Max)@ 25°C IC @100°C <2.5V 40A STGW39NC60VD 600V • Low CRES / CIES ratio (no cross conduction susceptibility) ■ High frequency operation

GW39NC60

Abstract: GW39NC60VD JESD97 STGW39NC60VD
Contextual Info: STGW39NC60VD N-channel 40A - 600V - TO-247 Very fast switching PowerMESH IGBT PRELIMINARY DATA General features Type VCES VCE sat (Max)@ 25°C IC @100°C <2.5V 40A STGW39NC60VD 600V • Low CRES / CIES ratio (no cross conduction susceptibility) ■ High frequency operation

Contextual Info: IXGR72N60B3H1 GenX3TM 600V IGBT w/ Diode VCES IC110 VCE sat tfi(typ) (Electrically Isolated Tab) = = £ = 600V 40A 1.80V 92ns Medium Speed Low Vsat PT IGBT ISOPLUS247TM for 5-40 kHz Switching Symbol Test Conditions Maximum Ratings VCES TJ = 25C to 150C

IXGR72N60B3H1

Abstract: 72N60B3 IF110 ISOPLUS247 180v dc motor speed control
Contextual Info: Preliminary Technical Information IXGR72N60B3H1 GenX3TM 600V IGBT VCES IC110 VCE sat tfi(typ) (Electrically Isolated Back Surface) = = ≤£ = 600V 40A 1.80V 92ns Medium Speed Low Vsat PT IGBT for 5-40 kHz Switching ISOPLUS 247TM Symbol Test Conditions Maximum Ratings

G20N60B3D

Abstract: BVces HGTG20N60B3D LD26 RHRP3060 igbt 600V 45UH
Contextual Info: S E M I C O N D U C T O R HGTG20N60B3D 40A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode January 1996 Features Package • 40A, 600V at TC = +25oC JEDEC STYLE TO-247 • Typical Fall Time - 140ns at +150oC E C • Short Circuit Rated

FGH40N60SFD

Abstract: FGH40N60SFDTU
Contextual Info: FGH40N60SFD tm 600V, 40A Field Stop IGBT Features General Description • High current capability • Low saturation voltage: VCE sat =2.3V @ IC = 40A • High input impedance • Fast switching Using Novel Field Stop IGBT Technology, Fairchild’s new sesries of Field Stop IGBTs offer the optimum performance for

Contextual Info: FGH40N60UFD tm 600V, 40A Field Stop IGBT Features General Description • High current capability • Low saturation voltage: VCE sat =1.8V @ IC = 40A • High input impedance • Fast switching Using Novel Field Stop IGBT Technology, Fairchild’s new sesries of Field Stop IGBTs offer the optimum performance for

G20N60B3

Abstract: G20N60 HGTG20N60B3 G20N60B HGTP20N60B3 LD26 RHRP3060 hg*20n60
Contextual Info: HGTP20N60B3, HGTG20N60B3 S E M I C O N D U C T O R 40A, 600V, UFS Series N-Channel IGBT February 1996 Features • • • • • Package JEDEC TO-220AB COLLECTOR EMITTER 40A, 600V at TC = +25oC Square Switching SOA Capability Typical Fall Time - 140ns at +150oC

20n60c3DR

Abstract: 20n60c3 HGTG20N60C3DR 20n60c* equivalent INTEPOWER HGTG LD26 RURP1560 20N60C3D
Contextual Info: HGTG20N60C3DR S E M I C O N D U C T O R 40A, 600V, Rugged, UFS Series N-Channel IGBT with Anti-Parallel Ultrafast Diode November 1996 Features Description • 40A, 600V at TC = 25oC This family of IGBTs was designed for optimum performance in the demanding world of motor control operation as well as

20N60C3DR

Contextual Info: X HGTG20N60C3DR M Aß , 40A, 600V, Rugged, UFS Series N-C hannel IGBT w ith A nti-Parallel U ltrafast Diode November 1996 Features Description • 40A, 600V at T c = 25°C This family of IGBTs was designed for optimum performance in the demanding world of motor control operation as well as

G20N60B3D

Abstract: G20N60B hg*20n60 Hgtg20n60
Contextual Info: HGTG20N60B3D S E M I C O N D U C T O R 40A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode November 1997 Features Description • 40A, 600V at TC = 25oC • Hyperfast Anti-Parallel Diode The HGTG20N60B3D is a MOS gated high voltage switching device combining the best features of MOSFETs and

PJ 969 diode

Abstract: TA49050 pj 809 pj 986 diode
Contextual Info: S E M I C O N D U C HGTP20N60B3 it: March1995 40A, 600V, UFS Series N-Channel IGBT Features Package • 40A, 600V at Tc = +25°C JEDEC TO-220AB • Square Switching SOA Capability • Typical Fall Time - 140ns at +150°C • Short Circuit Rated • Low Conduction Loss

FGH40N60SMDF

Contextual Info: FGH40N60SMDF tm 600V, 40A Field Stop IGBT Features General Description • Maximum Junction Temperature : TJ =175oC • Positive Temperaure Co-efficient for easy parallel operating • High current capability • Low saturation voltage: VCE sat =1.9V(Typ.) @ IC = 40A