HXNV0100 Search Results

HXNV0100

Contextual Info: HXNV0100 HXNV0100 1Megabit 64K x 16 Non-Volatile Magneto-Resistive RAM Features • Fabricated on S150 Silicon On Insulator SOI CMOS Underlayer Technology ■ 150 nm Process (Leff = 130 nm) ■ Total Dose Hardness ≥ 1x106 rad (Si) ■ ■ ■ Dose Rate Upset Hardness ≥ 1x109

Contextual Info: HXNV0100 HXNV0100 1Megabit 64K x 16 Non-Volatile Magneto-Resistive RAM Features n Fabricated on S150 Silicon On Insulator SOI CMOS Underlayer Technology n 150 nm Process n Total Dose Hardness 1x106 rad (Si) n Dose Rate Upset Hardness 1x109 rad(Si)/s

honeywell mram

Abstract: silicon on insulator
Contextual Info: HMXNV0100 h HXNV0100 64K x 16 Non-Volatile Magnetic RAM Advanced Information The 64K x 16 radiation hardened low power nonvolatile Integrated Power Up and Power Down circuitry controls Magnetic RAM MRAM is a high performance 65,536 the condition of the device during power transitions.

HXNV0100

Abstract: Tunneling Magnetoresistance mram HXVN0100 MIL-PRF38535 S150 Department of Defense honeywell mram
Contextual Info: HXVN0100 HXNV0100 1Megabit 64K x 16 Non-Volatile Magneto-Resistive RAM Features • Fabricated on S150 Silicon On Insulator SOI CMOS Underlayer Technology ■ 150 nm Process (Leff = 130 nm) ■ Total Dose Hardness ≥ 1x106 rad (Si) ■ ■ ■ Dose Rate Upset Hardness ≥ 1x109