HX640 Search Results

HX6408

Contextual Info: Honeywell Advance information HX6408 512K x 8 STATIC RAM—SOI FEATURES RADIATION OTHER • Fabricated with RICMOS V Silicon on Insulator SOI 0.5 |im Process (Lef) = 0.4 pm) • Read/Write Cycle Times <25 ns (-55 to 125°C) • Total Dose Hardness >5x105rad(Si02)

Contextual Info: HX6408 Advanced Information HX6408 512k x 8 STATIC RAM The 512K x 8 Radiation Hardened Static RAM is a high The RICMOS V low power process is a SOI CMOS performance 524,288 word x 8-bit static random access technology with an 80 Å gate oxide and a minimum

Contextual Info: Honeywell Military & Space Products HX6409 HX6218 HX6136 FIFO— SOI FEATURES • 1K x 36, 2K x 18, 4K x 9 Organizations OTHER • Fabricated with RICMOS IV Silicon on Insulator SOI 0.8 jim Process (Leff = 0.65|am) • Read/Write Cycle Times <35 ns (-55° to 125°C)

x-ray cmos

Abstract: HX6409 6409D 6218 FIFO 065um capacitor enw
Contextual Info: FIFO – HX6409/HX6218/HX6136 First-In First-Out Memory HX6409/HX6218/HX6136 The HX6409, HX6218, and HX6136 are high speed, low power, first-in first-out memories with clocked read and write interfaces. The HX6409 is a 4096-word by 9bit memory array; the HX6218 is a 2048-word by 18-bit

065um

Contextual Info: FIFO – HX6409/HX6218/HX6136 First-In First-Out Memory HX6409/HX6218/HX6136 The HX6409, HX6218, and HX6136 are high speed, low power, first-in first-out memories with clocked read and write interfaces. The HX6409 is a 4096-word by 9bit memory array; the HX6218 is a 2048-word by 18-bit

HX6409

Abstract: D1878
Contextual Info: Aerospace Electronics FIFO—SOI HX6409 HX6218 HX6136 FEATURES • 1K x 36, 2K x 18, 4K x 9 Organizations OTHER • Fabricated with RICMOS IV Silicon on Insulator SOI 0.8 µm Process (Leff = 0.65µm) • Read/Write Cycle Times <35 ns (-55° to 125°C)

Contextual Info: Honeywell Military & Space Products FIFO—SOI HX6409 HX6218 HX6136 FEATURES • 1K x 36, 2K x 18, 4K x 9 Organizations • Fabricated with RICMOS IV Silicon on Insulator SOI 0.8 jam Process (Leff = 0.65|im) OTHER • Read/Write Cycle Times <35 ns (-55° to 125°C)

Contextual Info: Aerospace Electronics FIFO— SOI HX6409 HX6218 HX6136 FEATURES • 1K x 36, 2K x 18, 4K x 9 Organizations OTHER • Fabricated with RICMOS IV Silicon on Insulator SOI 0.8 |a,m Process (Leff = 0.65|a,m) • Read/Write Cycle Times <35 ns (-55° to 125°C)

Contextual Info: FIFO - HX6409/HX6218/HX6136 First-In First-Out Memory HX6409/HX6218/HX6136 The HX6409, HX6218, and HX6136 are high speed, low In addition, the three FIFOs have an output enable pin power, first-in first-out memories with clocked read and write OE and a master reset pin (MR). The read (CKR)

HX6409

Contextual Info: Aerospace Electronics FIFO—SOI HX6409 HX6218 HX6136 FEATURES • 1K x 36, 2K x 18, 4K x 9 Organizations OTHER • Fabricated with RICMOS IV Silicon on Insulator SOI 0.8 µm Process (Leff = 0.65µm) • Read/Write Cycle Times <35 ns (-55° to 125°C)

900198

Abstract: HX6408
Contextual Info: Aerospace Electronics Advance Information 512K x 8 STATIC RAM—SOI HX6408 FEATURES RADIATION OTHER • Fabricated with RICMOS V Silicon On Insulator SOI 0.35 µm Process (Leff = 0.28 µm) • Read/Write Cycle Times ≤ 20 ns, (3.3 V), 0 to 80°C ≤ 25 ns, (3.3 V), -55 to 125°C

HX6408

Contextual Info: Honeywel Advance Information Aerospace Electronics HX6408 512K x 8 STATIC RAM— SOI FEATURES RADIATION OTHER • • Read/Write Cycle Times < 20 ns, 3.3 V , 0 to 80°C < 2 5 ns, (3.3 V), -55 to 125°C Fabricated with RICMOS V Silicon On Insulator (SOI) 0.35 |a,m Process (Leff = 0.28 |a,m)

Contextual Info: HX6409/HX6218/HX6136 First-In First-Out Memory The HX6409, HX6218, and HX6136 are high speed, low power, first-in first-out FIFO memories with clocked read and write interfaces. The HX6409 is a 4096-word by 9-bit memory array; the HX6218 is a 2048-word by 18-bit memory array; and the HX6136

Contextual Info: HX6408 512K x 8 STATIC RAM The monolithic 512K x 8 Radiation Hardened Static RAM is a high performance 524,288 word x 8-bit static random access memory. It is fabricated with Honeywell’s radiation hardened technology. It is QML qualified and is designed for use in systems

Contextual Info: Honeywell Military & Space Products Preliminary FIFO—SOI HX6409 HX6218 HX6136 FEATURES • 1K x 36, 2K x 18, 4K x 9 Organizations OTHER • Fabricated with RICMOS IV Silicon on Insulator SOI 0.8 n.m Process (Lelf = 0.65}im) • Read/Write Cycle Times

Contextual Info: Honeywell Military & Space Products FIFO— SOI HX6409 HX6218 HX6136 FEATURES • • 1 K x 36, 2 K x 18, 4 K x 9 O rganizations Fabricated with RICMOS IV Silicon on Insulator SOI 0.8 j^m Process (Leff = 0.65|am) OTHER • R ead/W rite Cycle Tim es <35 ns (-55° to 125°C)

900198

Abstract: HX6408 si02 1a15
Contextual Info: Honeywel Advance Information 512K x 8 STATIC RAM—SOI HX6408 FEATURES RADIATION OTHER • Fabricated with RICMOS V Silicon on Insulator SOI 0.5 |a,m Process (Leff = 0.4 |a,m) • Read/Write Cycle Times < 2 5 ns (-55 to 125°C) • Total Dose Hardness >5x105rad(S i02)

NSL 32 equivalent

Abstract: AVW smd AVW smd transistor
Contextual Info: Honeywell Aerospace Electronics Advance Information 512K x 8 STATIC RAM—SOI HX6408 FEATURES RADIATION OTHER • • Read/Write Cycle Times < 20 ns, 3.3 V , 0 to 80°C < 25 ns, (3.3 V), -55 to 125°C Fabricated with RICMOS V Silicon On Insulator (SOI) 0.35 [im Process (Left = 0.28 |im)

NSL 32 equivalent

Abstract: HX6408
Contextual Info: HX6408 Advanced Information HX6408 512k x 8 STATIC RAM The 512K x 8 Radiation Hardened Static RAM is a high The RICMOS V low power process is a SOI CMOS performance 524,288 word x 8-bit static random access technology with an 80 Å gate oxide and a minimum

NSL 32 equivalent

Abstract: HX6408
Contextual Info: Aerospace Electronics Advance Information 512K x 8 STATIC RAM—SOI HX6408 FEATURES RADIATION OTHER • Fabricated with RICMOS V Silicon On Insulator SOI 0.35 µm Process (Leff = 0.28 µm) • Read/Write Cycle Times ≤ 20 ns, (3.3 V), 0 to 80°C ≤ 25 ns, (3.3 V), -55 to 125°C

honeywell memory sram

Abstract: hx6408 HXS6408
Contextual Info: HXS6408 HXS6408 512k x 8 STATIC RAM The monolithic 512k x 8 Radiation Hardened Static RAM is a high performance 524,288 word x 8-bit static random access memory, fabricated with Honeywell’s 150nm silicon-on-insulator CMOS S150 technology. It is designed for use in low voltage systems operating

HX6408

Contextual Info: HRT6408 512K x 8 STATIC RAM The monolithic 512k x 8 Radiation Tolerant Static RAM is a high performance 524,288 word x 8-bit static random access memory, fabricated with Honeywell’s 150nm silicon-on-insulator CMOS S150 technology. It is designed for use in low

Contextual Info: iCE40 HX-Series Ultra Low-Power mobileFPGA™ Family R SiliconBlue December 15, 2011 1.1 Preliminary Data Sheet Figure 1: iCE40 HX-Series Family Architectural Features  HX-Series - Tablet targeted series optimized for high performance Low cost package offerings

RCA SK CROSS-REFERENCE

Abstract: CD4003 2N2505 TF408 1N4465 250PA120 2N3017 pt 3570 trw rf pa189 Semicon volume 1
Contextual Info: 1969 o < 00 x ic e uo <r\ *—4 rO O CM u J 'r < o o o CO r aJ. rfrr.~> y -< z X— < P“ -J Sem iconductor Annual At .0008" Dia. . . . there is no second source phire orifice insert. Tempress also created and supplied the tungsten carbide ultrasonic bonding tool and pioneered