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    honeywell memory sram

    Abstract: hx6408 HXS6408
    Contextual Info: HXS6408 HXS6408 512k x 8 STATIC RAM The monolithic 512k x 8 Radiation Hardened Static RAM is a high performance 524,288 word x 8-bit static random access memory, fabricated with Honeywell’s 150nm silicon-on-insulator CMOS S150 technology. It is designed for use in low voltage systems operating


    Original     		hxs6408150nm22cfrhoneywell memory sram+1hx6408 PDF

    HX6408

    Contextual Info: HXS6408 HXS6408 512k x 8 STATIC RAM The monolithic 512k x 8 Radiation Hardened Static RAM is a high performance 524,288 word x 8-bit static random access memory, fabricated with Honeywell’s 150nm silicon-on-insulator CMOS S150 technology. It is designed for use in low voltage systems operating


    Original     		hxs6408150nmads-14163hx6408 PDF

    5962L0053605VYC

    Abstract: 5962-9069204QXA ATMEL 302 24C16 UT9Q512E-20YCC MOH0268D UT54ACS164245SEIUCCR Z085810 5962-9762101Q2A UT28F256QLET-45UCC 5962R0250401KXA
    Contextual Info: NOT MEASUREMENT SENSITIVE MIL-HDBK-103AJ 19 SEPTEMBER 2011 SUPERSEDING MIL-HDBK-103AH 28 MARCH 2011 DEPARTMENT OF DEFENSE HANDBOOK LIST OF STANDARD MICROCIRCUIT DRAWINGS This handbook is for guidance only. Do not cite this document as a requirement. AMSC N/A


    Original     		mil-hdbk-103ajmil-hdbk-103ah5962l0053605vyc5962-9069204qxa+8atmel 302 24c16ut9q512e-20yccmoh0268dut54acs164245seiuccrz0858105962-9762101q2aut28f256qlet-45ucc5962r0250401kxa PDF