HM6504 Search Results

sn76131

Abstract: tlo72cp TOSHIBA 2N3055 M53207P 2N3055 TOSHIBA KIA7313AP kia7640ap LA5530 M5L8155P TBB1458B
Contextual Info: ACTIVE ELECTRONICS COMPONENTS CROSS REFERENCE GUIDE 2SC429GTM 2SC458 2SC458LG 2SC503 2SC504 2SC510 2SC512 2SC519 2SC520A 2SC594 2SC699A 2SC780 2SC809-1 2SC945 2SC3012 2SC3074 2SC3114 2SC3115 2SC3116 2SC3117 2SC3134 2SC3135 2SC3138 2SC3143 2SC3144 2SC3145 2SC3157

HM6504

Abstract: IM6504
Contextual Info: in ib s h . IM6504 4 0 9 6 Bit 4 0 9 6 x 1 CMOS S tatic RAM FEATURES GENERAL DESCRIPTION • • • • • • • • • The IM6504 is a high speed, low power CMOS Static RAM organized 4096 words by 1 bit. Input and three state out­ puts are TTL com patible a n d allo w for direct interface with

6504B

Abstract: HM-6504B-2
Contextual Info: HM-6504B-2/HM-6504B-9 OPERATING RANGE ABSOLUTE MAXIMUM RATINGS Supply Voltage - VCC - GND -0.3V to +8.0V Input or O utput Voltage Applied (GND -0.3V) to (VCC +0.3V) Storage Temperature Operating Supply Voltage M ilitary (-2) Industrial (-9) -65°C to +150°C

24501BVA

Abstract: 8102403VA 8102405VA 810240IVA HM1-6504-9 HM1-6504B-9 HM1-6504S-9 HM3-6504-9 HM-6504
Contextual Info: HM-6504 TM 4096 x 1 CMOS RAM March 1997 Features Description • Low Power Standby. . . . . . . . . . . . . . . . . . . 125µW Max The HM-6504 is a 4096 x 1 static CMOS RAM fabricated using self-aligned silicon gate technology. The device utilizes synchronous circuitry to achieve high performance and

qml-38535

Abstract: M38510-24502BVA as 15-f HM1-6514S8
Contextual Info: REVISIONS LTR DESCRIPTION DATE YR-MO-DA APPROVED C Add device types 03, 04, 05, 06, and 07. Add approved source CAGE 66632. Add case outline Y. Editorial changes throughout. Change to military drawing format and new code ident. 67268. 1987 OCT 23 M. A. Frye

Contextual Info: H M -6504 J HARRIS 4096 x 1 CMOS RAM Features Pinouts • Lo w P o w e r S ta n d b y .1 2 5 |iW M ax. TO P VIEW • Lo w P o w e r O p e r a t io n .3 5 m W /M H z M ax.

Contextual Info: a HM-6504/883 HARRIS S E M I C O N D U C T O R 4096 x 1 CMOS RAM August 1996 Features Description • This Circuit is Processed in Accordance to MIL-STD883 and is Fully Conform ant Under the Provisions of Paragraph 1.2.1. The HM-6504/883 is a 4096 x 1 static CMOS RAM

74c920

Abstract: 74C929 74C930 1 phase SCR TRIGGER PULSE TRANSFORMER d8259ac zener chn 848 P8255 interfacing 8289 with 8086 HD-6402C-9 harris semiconductor cmos
Contextual Info: ADVANCED SEMICONDUCTOR DEVIC^S P T Y LTD y I JOHANNESBURG 2000 TEL. 802-5820 DIGITAL DATA BOOK Part of the Harris Spectrum of Integrated Circuits HARRIS $ 5 .0 0 1 9 8 4 Harris C M O S Digital Data Book Harris Semiconductor CMOS Digital Products Division's

74c920

Abstract: ram 6164 6116 RAM 2116 ram 2064 ram 74C929 4016 RAM 4045 RAM 6264 cmos ram 74C930
Contextual Info: Industry CMOS RAM Cross Reference h a r r is c m o s ram s DESCRIPTION AMD HARRIS FUJ­ ITSU EDI HIT­ ACHI IDT M ITSU­ MOT­ BISHI OROLA N A T­ IONAL NEC RCA OKI TOSH* ISA SMOS NMOS, OTHER 1K CMOS RAMs 1Kx1, 16 Pin Synchronous HM-6508 1 Kx1, 18 Pin Synchronous

Contextual Info: HM-6564 33 WAR 8K X 8 , 16K X 4 CMOS RAM Module January 1992 Features Description • Low Power Max. The HM-6564 is a 64K bit CMOS RAM. It consists of 16 HM-6504 4K x 1 CMOS RAMs, in leadless carriers, mounted

Contextual Info: HARRIS HM-6504/883 4096 Ju n e 19 89 Features X 1 CMOS RAM P in o u t H M 1-6 5 0 4/88 3 CERAMIC DIP TOP VIEW • This Circuit is Processed in Accordance to M il-Std-883 and is Fully Conformant Under the Provisions of Paragraph 1.2.1. • Low Power S tandby. 125|jWMax.

HM1-6504-9

Abstract: HM3-6504-9 HM4-6504-9 HM-6504 HM-6504-9 8102405VA 810240IVA HM1-6504B-9 HM1-6504S-9 HM-6504S-9
Contextual Info: HM-6504 HARRIS æ S E M I C O N D U C T O R 4096 x 1 CMOS RAM March 1997 Features Description • Low Power S tan db y. 125|aW Max • Low Power O p e ra tio n . 35mW /MHz Max • Data R e te n tio n . at 2.0V Min

HM-6504

Abstract: HM-6504-9 HM-6504S-8 HM-6504S-9 M6504
Contextual Info: H A R R IS S E E 1 IC 0 N D SECTOR iS DE| 4305571 □ □ lD b 7 b 5 -r-¥i H M -6 5 0 4 h a r r is 4096 x 1 CMOS RAM Features Pinouts • Low Power S ta n d b y . . 125|jW Max. • Low Power O p e ra tio n .

HM6504

Abstract: IM6504
Contextual Info: D IM IM 6504 4 0 9 6 B it 4 0 9 6 x 1 C M O S S ta tic R A M ÏÏÏE P IO IL FEATURES GENERAL DESCRIPTION • • • • • • • • » The IM 6504 is a high speed, low power C M O S S tatic RAM organized 4096 words by 1 bit. Input and three state out­

6504

Abstract: HM1-6504-9 HM3-6504-9 6504-9 24501BVA 8102403VA 8102405VA 810240IVA HM1-6504B-9 HM1-6504S-9
Contextual Info: HM-6504 4096 x 1 CMOS RAM March 1997 Features Description • Low Power Standby . . . . . . . . . . . . . . . . . . . 125µW Max The HM-6504 is a 4096 x 1 static CMOS RAM fabricated using self-aligned silicon gate technology. The device utilizes synchronous circuitry to achieve high performance and low

7402 RS flip flop

Abstract: CI 7404 HM-6100 7404 sl cmos rs flip flop 6402 uart prom 256x4 bit 7400 UNIVERSAL BUILDING BLOCKS cp 7XXX M6504
Contextual Info: A Typical M icroprocessor System H M -6 3 2 2 1024 x 12 ROM AD D R E S S SPACE 30 72 • 4 0 9 5 lio A D D R E S S SPACE (0 0 0 0 - 02S5 jq 3 3-9 Table 1 - CMOS Microprocessor Products D ESC R IPTIO N H A R R IS P A RT NUM BER PAGE NUMBER CPU/Controller Group

A5518

Abstract: 6501 HM-6504 HM-6100 HM-6322 HM-6501 HM-6503 HM-6551 5A6c M6504
Contextual Info: HARRIS HM-6501 SEM ICO ND UCTO R P R O D U C T S DIVISI ON A DIVISION OF HARRIS CORPORATION 256 4 CMOS RAM X NOT RECOMMENDED FOR NEW DESIGNS - SEE HM-6551 Features Pinout LOW ST A N D B Y PO W ER 50/LtW M A X L O W O P E R A T IN G P O W E R A3 [ T V ''- 'r 22

HM5-6564-5

Abstract: HM-6504
Contextual Info: Specifications HMS-6S64-5 ELECTRICAL CHARACTERISTICS TE M P . & VC C = O P E R A T IN G RANGE SYM BO L PARAM ETER M IN T E M P . = 2 5 °C VC C = 5 .0 V MAX T Y P IC A L U N IT S TEST C O N D T IO N S TELQ V C hip Enable Access 450 350 ns TAVQV Address Access

6504

Abstract: 6132 RAM
Contextual Info: HM-6504 HARRIS S E M I C O N D U C T O R 4096 x 1 CMOS RAM March 1997 Features Description • Low Power Standby. 125|iW Max The HM-6504 is a 4096 x 1 static CMOS RAM fabricated using self-aligned silicon gate technology. The device utilizes

Creative IC CT 1975

Abstract: 74s188 programming sd 431 sn74s454 MMI TiW PROM programming procedure ci la 7610 74S472 PROM PROGRAMMING MB7122H 74S287 programming instructions FZH 161
Contextual Info: Part of the Harris Spectrum of Integrated Circuits 44 HARRIS Q Quantum e! scironic#500 Sox 391262 B ra m ie y 1984 Harris Bipolar Digital Data Book 2018 Harris Semiconductor Bipolar Digital Products represent state-of-the-art production in density and performance.

6504B/883

Abstract: 6504
Contextual Info: HM-6504/883 TM 4096 x 1 CMOS RAM March 1997 Features Description • This Circuit is Processed in Accordance to MIL-STD883 and is Fully Conformant Under the Provisions of Paragraph 1.2.1. The HM-6504/883 is a 4096 x 1 static CMOS RAM fabricated using self-aligned silicon gate technology. The

Contextual Info: Specifications HM-6504C-9 ABSOLUTE MAXIMUM RATINGS OPERATING RANGE Supply Voltage - VCC -G N D -0 .3 V to + 8.0 V Input or O utput Voltage Applied (GND -0 .3 V ) to (VCC + 0.3 V ) Storage Temperature Operating Supply Voltage Industrial (-9 ) 4 .5 V to 5.5V

Contextual Info: iji H A R R IS HM-6564 S E M I C O N D U C T O R 8K X 8 ,16K X 4 CMOS RAM Module January 1992 Features Description • The HM-6564 is a 64K bit CMOS RAM. It consists of 16 HM-6504 4K x 1 CMOS RAMs, in leadless carriers, mounted on a ceramic substrate. The HM-6564 is configured as an

6132 RAM

Contextual Info: HM-6504 fü HARRIS S E M I C O N D U C T O R 4096 x 1 C M O S RAM August 1996 Features Description The HM-6504 is a 4096 x 1 static CMOS RAM fabricated using self-aligned silicon gate technology. The device utilizes synchronous circuitry to achieve high performance and low