KSA910
Abstract: KSC2310 3050 transistor
Contextual Info: SAMSUNG SEMICONDUCTOR IN C -m e KSA910 D | ? cl b 4 m 2 QOOböOa 1 | 2-3 PNP EPITAXIAL SILICON TRANSISTOR DRIVER STAGE AUDIO AMPLIFIER HIGH VOLTAGE SWITCHING APPLICATIONS TO-92L •Complement to KSC2310 1Collector-Emitter Voltage Vceo=-150V 1Output Capacitance:
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1b4142
KSA910
KSC2310
-150V
O-92L
KSC2310
3050 transistor
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C 3311 transistor
Abstract: T-33-11 T3311 transistor jt T-3311 007B KSD5016 KSD5015 transistor 800V 1A npn transistor vceo 800v
Contextual Info: QG07fc,74 m O I KSD5015 SAMSUNG SEMICONDUCTOR NPN TRIPLE DIFFUSED PLANAR SILIC O N TRAN SISTO R INC COLOR TV HORIZONTAL' OUTPUT APPLICATIONS T-33-11 TO*3P(F High Collector-Base Voltage Vceo=1500V ABSOLUTE MAXIMUM RATINGS (Ta=25°C) Characteristic Collector-Base Voltage
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g07fc,
KSD5015
1500Y
T-33-11
KSD5016
00q7b
C 3311 transistor
T-33-11
T3311
transistor jt
T-3311
007B
KSD5016
KSD5015
transistor 800V 1A
npn transistor vceo 800v
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transistor a 92 a 331
Abstract: TRANSISTOR Q 667 transistor samsung tv transistor D 667 D F 331 TRANSISTOR C 3311 transistor
Contextual Info: IME D I 7^4142 G00?b?4 I NPN TRIPLE DIFFUSED KSD5015 SAMSUNG SEMICONDUCTCR PLANAR SILICON TRANSISTOR INC COLOR TV HORIZONTAL OUTPUT APPLICATIONS T -33-11 TO-3P(F High Collector-Base Voltage Vceo-ISOOV ABSOLUTE MAXIMUM RATINGS (Ta= 25°C) Characteristic
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KSD5015
CTO-92
0QG77fe
transistor a 92 a 331
TRANSISTOR Q 667
transistor
samsung tv
transistor D 667
D F 331 TRANSISTOR
C 3311 transistor
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LB 122 transistor To-92
Abstract: LB 122 NPN TRANSISTOR LB 122 transistor KSC815 KSA539 L300 samsung l300 TRANSISTOR A52
Contextual Info: SAMSUNG SEMICONDUCTOR INC KSC815 IME D | 7 cJ b 4 m 2 OODbASl 2 | NPN EPITAXIAL SILICON TRANSISTOR LOW FREQUENCY AMPLIFIER HIGH FREQUENCY OSCILLATOR TO-92 • Complement to KSA539 • Collector-Base Voltage Vcao=60V ABSOLUTE MAXIMUM RATINGS Ta=25°C Characteristic
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71b4142
KSC815
KSA539
LB 122 transistor To-92
LB 122 NPN TRANSISTOR
LB 122 transistor
KSA539
L300
samsung l300
TRANSISTOR A52
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samsung tv
Abstract: d 331 Transistor
Contextual Info: SAMSUNG SEMICONDUCTOR KSC1520 INC 1ME D | V 'lb m ia 0007S40 1 | NPN EPITAXIAL SILICON TRANSISTOR T 33- 07 COLOR TV CHROMA OUTPUT TO-202 • High Collector-Emitter Voltage Vceo=250V • Current Gain-Bandwidth Product fT=80MHz iyp ABSOLUTE MAXIMUM RATINGS (Ta=25°C)
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0007S40
KSC1520
80MHz
O-202
GQG77fe
samsung tv
d 331 Transistor
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samsung tv
Abstract: T337 KSC1520 KSC1983 TO-202 transistor NPN I44A
Contextual Info: SAMSUNG SEMICONDUCTOR KSC1520 INC 1ME 0 | V 'lb m ia 0007S40 1 | NPN EPITAXIAL SILICON TRANSISTOR r - 3 3 - COLOR TV CHROMA OUTPUT 7 TO-202 • High Collector-Emitter Voltage Vceo=250V • Current Gain-Bandwidth Product fT=80MHz iyp ABSOLUTE MAXIMUM RATINGS (Ta=25°C)
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0007S40
KSC1520
80MHz
O-202
100/iA,
3K5K10K
samsung tv
T337
KSC1983
TO-202 transistor NPN
I44A
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KSA634
Abstract: transistor FS 20 SM KSC1096 KSD18 KSD1891 D01002 KSB1151 SO-330 F33-C transistor bI 240
Contextual Info: SAMSUNG SEMICONDUCTOR INC ^ KSB1151 14E D | T 'ìt M lM à QaO?S5fl PNP EPITAXIAL SILICON TRANSISTOR T LOW COLLECTOR SATURATION VOLTAGE LARGE CURRENT - Ì 3 - Ì ? TO-126 HIGH POWER DISSIPATION: PT=1.3W <T.=25°C Complementary to KSD1891 ABSOLUTE MAXIMUM RATINGS Ta=25°C)
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KSB1151
KSD1891
O-126
KSA634
transistor FS 20 SM
KSC1096
KSD18
KSD1891
D01002
SO-330
F33-C
transistor bI 240
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D F 331 TRANSISTOR
Abstract: lt 332 diode samsung tv NPN Transistor 1A 800V to - 92 C 3311 transistor transistor t 04 27
Contextual Info: SAMSUNG SEMICONDUCTOR 14E 0 INC 17^4142 I OOQ?bkS T NPN TRIPLE DIFFUSED PLANAR SILICON TRANSISTOR KSD5012 T-33-11 COLOR TV HORIZONTAL OUTPUT APPLICATIONS DAMPER DIODE BUILT IN TO-3P(F) High Collector-Base Voltage VCb o = 1 5 0 0 V ABSOLUTE MAXIMUM RATINGS (Ta= 25°C )
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KSD5012
T-33-11
GQG77fe
D F 331 TRANSISTOR
lt 332 diode
samsung tv
NPN Transistor 1A 800V to - 92
C 3311 transistor
transistor t 04 27
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C 3311 transistor
Abstract: diode 226 T-33-11 la08a KSD5011 KSD5012 samsung tv l008A T3311
Contextual Info: SAMSUNG SEMICONDUCTOR INC KSD5011 i me d I T 'ib M m a ooo?tta 4 | NPNTHIPUfc DIFFUSED PLANAR SILIC O N TRAN SISTO R T-33-11 CO LOR TV HORIZONTALNOUTPUT APPLICATIONS DAMPER DIODE BUILT IN TO-3P(F) High Collector-Base Voltage Vcso= 1500V v ABSOLUTE MAXIMUM RATINGS (Ta=25°C)
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KSD5011
0D07kL2
T-33-11
Vcc-200V
0007bb7
C 3311 transistor
diode 226
T-33-11
la08a
KSD5011
KSD5012
samsung tv
l008A
T3311
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transistor bc 209 npn
Abstract: transistor bc 207 npn transistor BC 209 TRANSISTOR BC 208 bc 301 transistor transistor darlington 800v transistor bc 207 TRANSISTOR BC 206 IC-5V-54B2 KSD1693
Contextual Info: ¡ SAMSUNG S EMIC ONDUCT OR INC KSD1692 14E | 7^4142 00071,31 4 | NPN SILICON DARLINGTON TRANSISTOR T HIGH DC CURRENT GÀIN LOW COLLECTOR SATURATION VOLTAGE BUILT-IN A DAMPER DIODE AT E-C - 3 3 I , ? TO-126 HIGH POWER DISSIPATION : PT = 1.3W T.=25°C ABSOLUTE MAXIMUM RATINGS <Ta=25°C )
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KSD1692
O-126
PWC10
KSD5000
IC-5V--54B2
L-50OiM
0007b3?
transistor bc 209 npn
transistor bc 207 npn
transistor BC 209
TRANSISTOR BC 208
bc 301 transistor
transistor darlington 800v
transistor bc 207
TRANSISTOR BC 206
IC-5V-54B2
KSD1693
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KSC2310
Abstract: J-Z9-23
Contextual Info: SAMSUNG S EM I C O N D U C T O R INC 14 E 0 KSC2310 17^4142 OOOb'ilt 4 | NPN EPITAXIAL SILICON TRANSISTOR T -Z 9 -2 3 HIGH VOLTAGE POWER AMPLIFIER • Collactor— B«m Voltage Vc*o»200V TO-92L • Currant Gain-Bandwidth Product fT-100MHz OVp ABSOLUTE MAXIMUM RATINGS Ta=25°C)
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KSC2310
100MHz
J-Z9-23
O-92L
lc-100/iA,
J-Z9-23
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KSA545
Abstract: KSC853 LTAGE WALTA
Contextual Info: SAMSUNG SEMI C O NDU CT OR INC KSC853 11E | V lfcq ita O O Ob S S ? 3 | 'T - - 1 - f t NPN EPITAXIAL SILICON TRANSISTOR LOW FREQUENCY AMPLIFIER • Complement to KSA545 • High Collector-Bas* Voltage Vcso =70V • Collector Dissipation Pc =400mW ABSOLUTE MAXIMUM RATINGS Ta=25°C
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7U414E
KSC853
KSA545
400mW
KSA545
LTAGE
WALTA
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KSA709
Abstract: KSC1009
Contextual Info: SAMSUNG SEMICONDUCTOR INC T v M - v 2 3 l 4 E KSA709 O | OOGbflOE O PNP EPITAXIAL SILICON TRANSISTOR HIGH VOLTAGE AMPLIFIER • C o lle cto r-B a s e Voltage Vcso = -160V • C o lle cto r D issip a tio n P c =800mW • C o m p le m en t to KSC1009 TO-92 ABSOLUTE MAXIMUM RATINGS Ta=25°C
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KSA709
-160V
800mW
KSC1009
-100/iA,
KSC1009
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diode lt 238
Abstract: samsung tv lt 332 diode samsung SSE
Contextual Info: SAMSUNG SEMICONDUCTOR INC KSD5011 im e d I ao a?tta 4 N P N T R IF L t DIFFUSED P L A N A R SIL IC O N T R A N SIS T O R T-33-11 C O L O R TV HORIZONTALNOUTPUT APPLICA TIO N S DAM PER DIO DE BUILT IN TO-3P(F) High Collector-Base Voltage V cbo =1500V A BSO LU T E M A X IM U M RATINGS (Ta=25°C)
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KSD5011
T-33-11
GQG77fe
diode lt 238
samsung tv
lt 332 diode
samsung SSE
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200V transistor npn 2a
Abstract: samsung tv Samsung Semiconductor Q007t d 331 TRANSISTOR equivalent
Contextual Info: SAMSUNG SEMICONDUCTOR IME INC O 0007bM7 fl I NPN TRIPLE DIFFUSED PLANAR SILICON TRANSISTOR KSD5004 T-33 -13 COLOR TV HORIZONTAL OUTPUT APPLICATIONS HIGH Collector* ««* Voltage V eto « 1500V ABSOLUTE MAXIMUM RATINGS Ta= 2 5 °C ) Characteristic CoHector-Base Voltage
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0007bM7
KSD5004
SaturatO-92
GQG77fe
200V transistor npn 2a
samsung tv
Samsung Semiconductor
Q007t
d 331 TRANSISTOR equivalent
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samsung tv
Abstract: T-33-H KSD5007 KSD5010 200V transistor npn 2a
Contextual Info: SAMSUNG INC SEMICONDUCTOR 14E D | 7^4142 OOOTbSb T NPN TRIPLE DIFFUSED PLANAR SILICON TRANSISTOR KSD5007 T-2>3-i5 COLOR TV HORIZONTAL'OUTPUT APPLICATIONS High Collector-Base Voltage V c s o = 1500V ABSOLUTE. MAXIMUM RATINGS Ta=25°C Characteristic Collector-Base Voltage
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KSD5007
KSD5010
0007bbl
T-33-11
samsung tv
T-33-H
KSD5007
KSD5010
200V transistor npn 2a
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KSC2333
Abstract: NPN Transistor TO220 vcc 150V transistor 400v 3a 40w 180MH KSA940 KSC2073 KSC2233 KSC2335 samsung tv YS 150 003 b
Contextual Info: SAMSUNG SEM ICONDUCTOR INC KSC2Ö73 l^ E D | GOOTSMb 2 NPN EPITAXIAL SILICON TRANSISTOR r - 3 3 - o q TV VERTICAL DEFLECTION OUTPUT TO-220 • Complement to KSA940 • Collector-Base Voltage Vcso=150V ABSOLUTE MAXIMUM RATINGS Ta=25°C Characteristic ; I
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KSC2073
KSA940
r-33-ctf
O-220
KSC2333
NPN Transistor TO220 vcc 150V
transistor 400v 3a 40w
180MH
KSA940
KSC2233
KSC2335
samsung tv
YS 150 003 b
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samsung 217
Abstract: samsung tv NPN Transistor 1A 800V to - 92 ksd5002
Contextual Info: SAMSUNG SEMICONDUCTOR 14E INC D 7^4142 0QQ7t41 7 KSD5002 "T-33-13 COLOR TV HORIZONTAL OUTPUT APPLICATIONS (DAMPER DIODE BUILT IN HIGH Collector-Base Voltage V c so = 1500V ABSOLUTE MAXIMUM RATINGS (TB= 2 5 0C) Characteristic I NPN TRIPLE DIFFUSED PLANAR SILICON TRANSISTOR
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0QQ7t41
KSD5002
GQG77fe
samsung 217
samsung tv
NPN Transistor 1A 800V to - 92
ksd5002
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BF 234 transistor
Abstract: transistor KSC2786 RF POWER TRANSISTOR 100MHz samsung tv
Contextual Info: Inc SAMSUNG SEMICONDUCTOR KSC2786 i*e ° aoofibM q | ~ r - jj~ fy NPN EPITAXIAL SILICON TRANSISTOR a • r TV PIF AMPLIFIER, FM TUNER RF AMPLIFIER, MIXER, OSCILLATOR TO-92S • High Cumnt-CMIn-Bandwidth Product fT=600MHz iyp • High Power Gain Gp«=22dB at f=100MHz
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KSC2786
600MHz
-22dB
100MHz
O-92S
KSC2786
100MHz
T-31-17
BF 234 transistor
transistor
RF POWER TRANSISTOR 100MHz
samsung tv
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equivalent transistor c 243
Abstract: samsung tv
Contextual Info: SAMSU NG SEMICONDUCTOR INC D | 7^4142 GOO?b b f l 5 NPN TRIPLE DIFFUSED PLANAR SILICON TRANSISTOR KSD5013 T -3 3 -1 1 COLOR TV HORIZONTAL OUTPUT APPLICATIONS DAMPER DIODE BUILT IN High Collector-Base Voltage VCbo=1500V ABSOLUTE M AXIM UM RATINGS (Ta = 25°C )
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KSD5013
0QG77fe
equivalent transistor c 243
samsung tv
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TNY 260
Abstract: samsung flyback pin diagram TNY IC POWER SUPPLY flyback samsung diagram KA2136 flyback samsung Samsung TV circuit diagram samsung tab samsung tv tny 12v
Contextual Info: SAMSUNG SEM ICON DU CTOR INC Ifl Î>Ë| 7 ^ 4 1 4 2 0004130 S : KA2136 ' f - “i i ^ o n "A I' LINEAR INTEGRATED CIRCUIT LOW NOISE TV VERTICAL DEFLECTION SYSTEM The KA2136 is a monolithic integrated circuit in a 12-lead Quad in line plastic package. It’s intended for use In black & white and color
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KA2136
KA2136
12-lead
TNY 260
samsung flyback pin diagram
TNY IC POWER SUPPLY
flyback samsung diagram
flyback samsung
Samsung TV circuit diagram
samsung tab
samsung tv
tny 12v
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samsung tv
Abstract: 4142
Contextual Info: SAMSUNG INC S EM I C ON D U C T O R KSC1520A IME 0007542 NPN EPITAXIAL SILICON TRANSISTOR " r-3 2 > - c n ~ COLOR TV CHROMA OUTPUT TO-202 • High Collector-Emitter \foltaga Veto =300V • Current Gain-Bandwldth Product fT=80MHz Typ ABSOLUTE MAXIMUM RATINGS (Ta=25°C)
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KSC1520A
O-202
80MHz
GQG77fe
samsung tv
4142
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samsung tv
Abstract: samsung SSE
Contextual Info: SAMSUNG SEMICONDUCTOR 14E D |? 1 f c ,4 I 4 Z a a Q 7 t, S i 3 I INC N PN T R IP L E D IF FU SED P L A N A R SIL IC O N T R A N SIST O R KSD5006 — COLOR TV HORIZONTAL OUTPUT APPLICATIONS HIGH Collector-Base Voltage T-S3-13 V Cb o = 1 5 0 0 V ABSOLUTE MAXIMUM RATINGS Ta= 2 5pC
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KSD5006
Ves--800V,
GQG77fe
samsung tv
samsung SSE
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transistor 711
Abstract: DO 127 samsung tv
Contextual Info: IME D I 7 ^ 4 1 4 2 Q007b?7 b | NPN TRIPLE DIFFUSED PLANAR SILICON TRANSISTOR KSD5016 SAM SUN G SEM ICOND UC TO R INC T-33-11 V COLOR TV HORIZONTAL OUTPUT APPLICATIONS TO-3P F High Collector-Bass Vottags Vcso=1500V ABSOLUTE MAXIMUM RATINGS (Ta = 25°C) Characteristic
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Q007b
KSD5016
T-33-11
GQG77fe
transistor 711
DO 127
samsung tv
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