KSC1009 Search Results

pnp Transistor TO92 5V 200mA

Abstract: KSA709
Contextual Info: KSA709 KSA709 High Voltage Amplifier • • • • Collector-Base Voltage : VCBO= -160V Collector Power Dissipation : PC=800mW Complement to KSC1009 Suffix “-C” means Center Collector 1. Emitter 2. Collector 3. Base TO-92 1 1. Emitter 2. Base 3. Collector

transistor c1009

Abstract: c1009 c1009 transistor KSA709 KSC1009
Contextual Info: KSC1009 KSC1009 High Voltage Amplifier • • • • • High Collector-Base Voltage : VCBO=160V Collector Current : IC=700mA Collector Power Dissipation : PC=800mW Complement to KSA709 Suffix “-C” means Center Collector 1. Emitter 2. Collector 3. Base

Contextual Info: KSC1009 NPN EPITAXIAL SILICON TRANSISTOR HIGH VOLTAGE AMPLIFIER • • • • TO -92 High C ollector-Base Voltage: V Cb o = 1 6 0 V C ollector Current: lc=700m A C ollector Dissipation: Pc=800m W C om plem ent to KSA709 ABSOLUTE MAXIMUM RATINGS TA=25°C

KSA709

Contextual Info: KSC1009 NPN EPITAXIAL SILICON TRANSISTOR HIGH VOLTAGE AMPLIFIER • High Collector-Base Voltage: VCBO=160V • Collector Current: IC=700mA • Collector Dissipation: PC=800mW • Complement to KSA709 TO-92 ABSOLUTE MAXIMUM RATINGS TA=25°°C Characteristic

KSA709

Contextual Info: KSC1009 KSC1009 High Voltage Amplifier • • • • • High Collector-Base Voltage : VCBO=160V Collector Current : IC=700mA Collector Power Dissipation : PC=800mW Complement to KSA709 Suffix “-C” means Center Collector 1. Emitter 2. Collector 3. Base

KSA709

Contextual Info: KSA709 PNP EPITAXIAL SILICON TRANSISTOR HIGH VOLTAGE AMPLIFIER • Collector-Base Voltage: VCBO= -160V • Collector Dissipation: PC=800mW • Complement to KSC1009 TO-92 ABSOLUTE MAXIMUM RATINGS TA=25°°C Characteristic Symbol VCBO VCEO VEBO IC PC TJ T STG

KSA709

Abstract: KSC1009
Contextual Info: SAMSUNG SEMICONDUCTOR INC KSC1009 14E O | 7^4142 OQObf l bfl fl NPN EPITAXIAL SILICON TRANSISTOR T -29-23 HIGH VOLTAGE AMPLIFIER • • • • High Collector-Base Voltage Vceo=160V Collector Current lc =700inA Collector Dissipation P c =800mW Complement to KSA709

Contextual Info: KSC1009 NPN EPITAXIAL SILICON TRANSISTOR HIGH VOLTAGE AMPLIFIER • High Collector-Base Voltage V Cao=160V • Collector Current lc=700mA • Collector Dissipation P c*800m W • Com plem ent to KSA709 ABSOLUTE MAXIMUM RATINGS T a = 2 5 'C C h aracte ristic

KSA709

Abstract: KSC1009
Contextual Info: KSA709 KSA709 High Voltage Amplifier • • • • Collector-Base Voltage : VCBO= -160V Collector Power Dissipation : PC=800mW Complement to KSC1009 Suffix “-C” means Center Collector 1. Emitter 2. Collector 3. Base TO-92 1 1. Emitter 2. Base 3. Collector

KSA709

Abstract: KSC1009
Contextual Info: KSC1009 KSC1009 High Voltage Amplifier • • • • • High Collector-Base Voltage : VCBO=160V Collector Current : IC=700mA Collector Power Dissipation : PC=800mW Complement to KSA709 Suffix “-C” means Center Collector 1. Emitter 2. Collector 3. Base

A709 transistor

Abstract: a709 fairchild a709 KSA709CGBU KSA709
Contextual Info: KSA709 KSA709 High Voltage Amplifier • • • • Collector-Base Voltage : VCBO= -160V Collector Power Dissipation : PC=800mW Complement to KSC1009 Suffix “-C” means Center Collector 1. Emitter 2. Collector 3. Base TO-92 1 1. Emitter 2. Base 3. Collector

KSA709

Abstract: KSC1009
Contextual Info: KSC1009 KSC1009 High Voltage Amplifier • • • • High Collector-Base Voltage : VCBO=160V Collector Current : IC=700mA Collector Dissipation : PC=800mW Complement to KSA709 TO-92 1 1. Emitter 2. Base 3. Collector NPN Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25°C unless otherwise noted

KSA709

Abstract: KSC1009
Contextual Info: KSA709 KSA709 High Voltage Amplifier • Collector-Base Voltage : VCBO= -160V • Collector Dissipation : PC=800mW • Complement to KSC1009 TO-92 1 1. Emitter 2. Base 3. Collector PNP Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25°C unless otherwise noted

Contextual Info: KSC1009 NPN EPITAXIAL SILICON TRANSISTOR HIGH VOLTAGE AMPLIFIER • • • • High Collector-Base Voltage Vcao=160V Collector Current lc = 700mA Collector Dissipation Pc=800mW Complement to KSA709 ABSOLUTE MAXIMUM RATINGS Ta=25°C Characteristic Symbol

KSA709

Abstract: KSC1009
Contextual Info: SAMSUNG SEMICONDUCTOR INC T v M - v 2 3 l 4 E KSA709 O | OOGbflOE O PNP EPITAXIAL SILICON TRANSISTOR HIGH VOLTAGE AMPLIFIER • C o lle cto r-B a s e Voltage Vcso = -160V • C o lle cto r D issip a tio n P c =800mW • C o m p le m en t to KSC1009 TO-92 ABSOLUTE MAXIMUM RATINGS Ta=25°C

KSA709

Abstract: KSC1009
Contextual Info: KSA709 PNP EPITAXIAL SILICON TRANSISTOR HIGH VOLTAGE AMPLIFIER • Collector-Base Voltage V CBo = -160V • Collector Dissipation Pc =800m W • Complement to KSC1009 ABSOLUTE MAXIMUM RATINGS Ta=25°C Characteristic Sym bol Collector-Base Voltage Collector-Emitter Voltage

Contextual Info: KSA709 PNP EPITAXIAL SILICON TRANSISTOR HIGH VOLTAGE AMPLIFIER • Collector-Base Voltage V c b o = -160V • C ollector Dissipation Pc“ 800m W • Com plem ent to KSC1009 TO-92 ABSOLUTE MAXIMUM RATINGS TA=25'C Sym b o l C h aracte ristic Collector-Base Voltage

2SC9830

Abstract: 2SC983Y BSW69 2SC983-Y BF119 mps-002 SK3244 BF117 bf305 A5T5550
Contextual Info: LOW-POWER SILICON NPN Item Number Part Number 10 15 20 >= PMBT5550 PMBT5550 BFY43 BFY43 BF117 BF117 MPS002 TRS140 SE701S A5T5550 2N5550 TMPT5550 MMBT5550 MMBT5550 MMBT5550 2N5831 MMBT5551 JE5550A 2N5832 BC532 ~4261r 25 30 - 2N4270 JE5550 BSR19 A BSR19 (A)

BD53A

Abstract: KSA733 KSC1330 KSC945 BD139 BD433 TO92 KSE 13007 L ss8050 sot-23 KSE13009F KSP10
Contextual Info: FUNCTION GUIDE TRANSISTORS 3. QUICK REFERENCE TABLE APPLICATION 3.1 Audio Equipment “i Package Application FM AM D iff. Amp RM AM P M ix Conv Local Ose IF SOT-23 KSC2223 KSC2223 KSC2223 KSC2715 RF KSC1623 Conv Ose KSC2715 IF KSC2715 10W 20W KSA812/KSC1623

KSC2880

Abstract: KSA1200
Contextual Info: FUNCTION GUIDE TRANSISTORS 1-4. High Voltage Transistors 1-4-1. SOT-23'Type Transistors Condition Device and Polarity NPN KST42 1D KST43(1 E) PNP lc (A) VCE (V) lc (mA) MIN 300 200 150 140 0.5 0.5 0.5 0.6 10 10 5 5 30 30 10 10 40 40 60 60 KST92(2D) KST93(2E)

transistor 13003 AD

Abstract: ksd-180 HF 13003 KSD180 13003 HF KSD168 KSD966 ksd-168 PNP NPN Transistor VCEO 120V 100V Ic 7A KSC 1.5k 250v
Contextual Info: TRANSISTORS FUNCTION GUIDE 1. SMALL SIGNAL TRANSISTORS 1.1 General Purpose Transistors 1.1.1 SOT-23 Type Transistors Device and Polarity Marking Condition V ceo lc Vce h FE Condition (c le Vce(sat},VBE(sat)(v) Condition fiÌMHz) (V) (A) (V) !c (mA) (mA)

thermistor KSD201

Abstract: IRF power mosfets catalog Complementary MOSFETs buz11 BZX85C6V8 SPICE MODEL Diode 1N4001 50V 1.0A DO-41 Rectifier Diode K*D1691 make SMPS inverter welding machine transistor KSP44 1N5402 spice model tip122 tip127 mosfet audio amp
Contextual Info: Fairchild Semiconductor Product Catalog 2004 Microcontrollers Optoelectronics Across the board. Around the world. Analog Discrete Interface & Logic Interface & Logic Discrete Power Optoelectronics Analog & Mixed Signal Fairchild Semiconductor, The Power Franchise™

FQPF*7N65C APPLICATIONS

Abstract: bc548 spice model bf494 spice model spice model bf199 LM3171 BC517 spice model bc547 spice model BF494 spice MOC3043-M spice model SPICE model BC237
Contextual Info: Fairchild PSG.book Page i Wednesday, July 28, 2004 11:12 AM Fairchild Semiconductor Product Catalog Rev. 1 Analog & Mixed Signal Discrete Power Interface & Logic Microcontrollers Optoelectronics RF Power Front Matter.fm Page ii Monday, August 2, 2004 10:09 AM

SSP35n03

Abstract: bc417 ksh200 equivalent 2N5457 equivalent ss8050 equivalent 1N34 equivalent FQP50N06 equivalent bd139 equivalent 2N5458 equivalent 2N3563 equivalent
Contextual Info: Cross Reference Guide Industry 1.5KE100A 1.5KE100CA 1.5KE10A 1.5KE10CA 1.5KE110A 1.5KE110CA 1.5KE11A 1.5KE11CA 1.5KE120A 1.5KE120CA 1.5KE12A 1.5KE12CA 1.5KE130A 1.5KE130CA 1.5KE13A 1.5KE13CA 1.5KE150A 1.5KE150CA 1.5KE15A 1.5KE15CA 1.5KE160A 1.5KE160CA 1.5KE16A