HIGH VOLTAGE SMD TRANSISTOR Search Results

Contextual Info: SMD Type Type SMD Transistors IC Product specification 2SC5209 Features High voltage VCEO=50V. Small package for mounting. High hFE = 600 to 1800. Absolute Maximum Ratings Ta = 25 Symbol Rating Unit Collector-base voltage Parameter VCBO 50 V Emitter-base voltage

SMD AHp

Abstract: SMD TRANSISTOR MARKING AHP smd transistor marking 36 2SA1759
Contextual Info: Transistors SMD Type High-Voltage Switching Transistor 2SA1759 Features High breakdown voltage Low saturation voltage High switching speed Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector-emitter Voltage VCEO -400 V Collector-base Voltage

Contextual Info: SMD Type Type SMD Transistors IC Product specification 2SC5211 Features High voltage VCEO=50V. Small package for mounting. Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector-base voltage VCBO 55 V Emitter-base voltage VEBO 4 V Collector-emitter voltage

Contextual Info: SMD Type Type SMD Transistors IC Product specification 2SC5069 Features High current capacity. Adoption of MBIT process. High DC current gain. Low collector-to-emitter saturation voltage. High VEBO. Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating

2SA1200

Abstract: smd marking Y 2SC2880 SMD B100
Contextual Info: Transistors SMD Type High Voltage Switching Applications 2SA1200 Features High Voltage : VCEO = -150V High Transition Frequency : fT = 120MHz typ. Small Flat Package Complementary to 2SC2880 Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector-Emitter Voltage

2SC2880

Abstract: 2SA1200
Contextual Info: Transistors SMD Type High Voltage Switching Applications 2SC2880 Features High Voltage : VCEO = 150V High Transition Frequency : fT = 120MHz typ. Small Flat Package Complementary to 2SA1200 Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector-Emitter Voltage

Contextual Info: Transistors SMD Type Product specification 2SA1759 Features High breakdown voltage Low saturation voltage High switching speed Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector-emitter Voltage VCEO -400 V Collector-base Voltage VCBO -400

SMD BR

Abstract: 2sc3438 2sc343 2SA1368 smd b_r
Contextual Info: Transistors SMD Type High Voltage Drive Applications 2SA1368 Features High Voltage VCEO = -100V High Collector Current ICM = -800mA High Collector Dissipation PC = 500mW Small Package For Mounting Complementary to 2SC3438 Absolute Maximum Ratings Ta = 25

820 marking

Abstract: 2SD2537
Contextual Info: Transistors SMD Type Medium Power Transistor 2SD2537 Features High DC current gain. High emitter-base voltage. Low saturation voltage. Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector-base voltage VCBO 30 V Collector-emitter voltage

AK marking

Abstract: SMD AK SMD BR 08 2SA1740
Contextual Info: Transistors SMD Type High-Voltage Driver Applications 2SA1740 Features High Breakdown Voltage Adoption of MBIT Process Excellent hFE Linearlity. Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector-Base Voltage VCBO -400 V Collector-Emitter Voltage

SMD BR 08

Abstract: 2SC4548
Contextual Info: Transistors SMD Type High-Voltage Driver Applications 2SC4548 Features High Breakdown Voltage Adoption of MBIT Process Excellent hFE Linearlity. Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector-Base Voltage VCBO 400 V Collector-Emitter Voltage

2SC3736

Abstract: hFE CLASSIFICATION Marking
Contextual Info: Transistors SMD Type NPN Silicon Epitaxia 2SC3736 Features High speed,high voltage switching. Low collector saturation voltage. Absolute Maximum Ratings Ta = 25 Symbol Rating Unit Collector-base voltage Parameter VCBO 80 V Collector-emitter voltage VCEO 45

transistor A25 SMD

Abstract: smd transistor H-R
Contextual Info: Photocoupler SMD/DIP Type High Isolation Voltage Single Transistor Type Multi Photocoupler Series PS2501-1,-2,-4, PS2501L-1,-2,-4 Features High isolation voltage BV = 5 000 Vr.m.s. High collector to emitter voltage (VCEO = 80 V) High-speed switching (tr = 3

2SC4102

Contextual Info: Transistors SMD Type High-voltage Amplifier Transistor 2SC4102 Features High breakdown voltage. VCEO = 120V 1 Emitter 2 Base 3 Collector Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector-base voltage VCBO 120 V Collector-emitter voltage

SMD 1L

Abstract: 500ma 40v pnp 2SA1463 hFE CLASSIFICATION Marking
Contextual Info: Transistors IC SMD Type PNP Silicon Epitaxia 2SA1463 Features High speed,high voltage switching. Low Collector Saturation Voltage Absolute Maximum Ratings Ta = 25 Symbol Rating Unit Collector to base voltage Parameter VCBO -60 V Collecto to emitter voltage

SMD iC MARKING AE

Abstract: 2SA1419 ae marking
Contextual Info: Transistors SMD Type High-Voltage Switching Applications 2SA1419 Features Adoption of FBET, MBIT Processes High Breakdown Voltage and Large Current Capacity Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector-Base Voltage VCBO -180 V Collector-Emitter Voltage

2SA1417

Contextual Info: Transistors SMD Type High-Voltage Switching Applications 2SA1417 Features Adoption of FBET, MBIT Processes High Breakdown Voltage and Large Current Capacity Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector-Base Voltage VCBO -120 V Collector-Emitter Voltage

smd marking cc

Abstract: 2SC3647
Contextual Info: Transistors SMD Type High-Voltage Switching Applications 2SC3647 Features Adoption of FBET, MBIT Processes High Breakdown Voltage and Large Current Capacity Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector-Base Voltage VCBO 120 V Collector-Emitter Voltage

Contextual Info: Transistors SMD Type High-Voltage Switching Applications 2SC3649 Features Adoption of FBET, MBIT Processes High Breakdown Voltage and Large Current Capacity Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector-Base Voltage VCBO 180 V Collector-Emitter Voltage

D marking amplifier

Abstract: 2SA1201 2SC2881
Contextual Info: Transistors SMD Type Voltage Amplifier Applications 2SA1201 Features High Voltage : VCEO = -120V High Transition Frequency : fT = 120MHz typ. Small Flat Package Complementary to 2SC2881 Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector-Emitter Voltage

ad marking

Abstract: transistor smd marking AD 2SA1418
Contextual Info: Transistors SMD Type High-Voltage Switching Applications 2SA1418 Features Adoption of FBET, MBIT Processes High Breakdown Voltage and Large Current Capacity Fast Switching Speed Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector-Base Voltage

2SC3646

Contextual Info: Transistors SMD Type High-Voltage Switching Applications 2SC3646 Features Adoption of FBET, MBIT Processes High Breakdown Voltage and Large Current Capacity Fast Switching Time Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector-Base Voltage

SMD BR 08

Abstract: 2SA1416
Contextual Info: Transistors SMD Type High-Voltage Switching Applications 2SA1416 Features Adoption of FBET, MBIT Processes High Breakdown Voltage and Large Current Capacity Fast Switching Time Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector-Base Voltage

smd diode ua

Abstract: transistor smd marking 2SC3648
Contextual Info: Transistors SMD Type High-Voltage Switching Applications 2SC3648 Features Adoption of FBET, MBIT Processes High Breakdown Voltage and Large Current Capacity Fast Switching Speed Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector-Base Voltage