HFE MAX 200 Search Results

Contextual Info: SEMICONDUCTOR KTA1517S TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR LOW NOISE AMPLIFIER APPLICATION. FEATURES ・High Voltage : VCEO=-120V. ・Excellent hFE Linearity : hFE 0.1mA /hFE(2mA)=0.95(Typ.). ・High hFE: hFE=200～700. ・Low Noise : NF=1dB(Typ.), 10dB(Max.).

smd marking ly

Abstract: hFE CLASSIFICATION Marking 2SC4116 marking LG -sot23 -led SMD LY smd ic marking LY
Contextual Info: Transistors IC SMD Type Silicon NPN Epitaxial 2SC4116 Features High voltage and high current: VCEO = 50 V, IC = 150 mA max . Excellent hFE linearity: hFE (IC = 0.1 mA)/hFE (IC = 2 mA) = 0.95 (typ). High hFE: hFE = 70 700. Low noise: NF = 1dB (typ.), 10dB (max).

KTC3875S

Contextual Info: SEMICONDUCTOR KTC3875S TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. FEATURES ・Excellent hFE Linearity : hFE 0.1mA /hFE(2mA)=0.95(Typ.). ・High hFE : hFE=70～700. ・Low Noise : NF=1dB(Typ.), 10dB(Max.).

Contextual Info: SEMICONDUCTOR KTA1517S TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR LOW NOISE AMPLIFIER APPLICATION. FEATURES ・High Voltage : VCEO=-120V. E B L L ・Excellent hFE Linearity ・High hFE: hFE=200～700. D : hFE 0.1mA /hFE(2mA)=0.95(Typ.). 3 G A 2 H ・Low Noise : NF=1dB(Typ.), 10dB(Max.).

KTA2017

Abstract: KTC4077
Contextual Info: SEMICONDUCTOR KTA2017 TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR LOW NOISE AMPLIFIER APPLICATION. FEATURES E ・High Voltage : VCEO=-120V. M B M ・Excellent hFE Linearity : hFE 0.1mA /hFE(2mA)=0.95(Typ.). D 3 1 G ・High hFE: hFE=200～700. J A 2 ・Low Noise : NF=1dB(Typ.), 10dB(Max.).

Contextual Info: SEMICONDUCTOR TECHNICAL DATA KTC4077 EPITAXIAL PLANAR NPN TRANSISTO R LOW NOISE AMPLIFIER APPLICATION. FEATURES • High Voltage : VCeo=120V. • Excellent hFF Linearity : hFE 0.1mA /hFE(2mA)=0.95(Typ.). • High hFE : hFE=200~700. • Low Noise : NF=ldB(Typ.), 10dB(Max.).

KTA2017

Abstract: KTC4077 e6v1
Contextual Info: SEMICONDUCTOR TECHNICAL DATA KTC4077 EPITAXIAL PLANAR NPN TRANSISTOR LOW NOISE AMPLIFIER APPLICATION. FEATURES • High Voltage : V Ceo =120V . • Excellent hFF Linearity : hFE 0.1mA /hFE(2mA)=0.95(Typ.). • High hFE : hFE=200~700. • Low Noise : NF=ldB(Typ.), 10dB(Max.).

MMS8050-L

Abstract: 2SB1073R Bd882 2SD667C 2SD667AC 2SD669AC sot23-3 marking 63 zt5551 2SD468C marking 2sd1664
Contextual Info: TM Micro Commercial Components SMALL SIGNAL&POWER TRANSISTORS MCC Part Number VCEO V IC (A) hFE @ VCE & IC VCE(sat) & VBE(sat) @ IC & IB hFE hFE VCE IC Min. Max. (V) (mA) VCE(sat) VBE(sat) Max.(V) Max.(V) fT @ VCE & IC Polarity IC IB fT Min. TPY. fT Max.

2SA1049

Abstract: 2SC2459 transistor 2sc2459
Contextual Info: 2SC2459 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT process 2SC2459 Audio Amplifier Applications Unit: mm • High breakdown voltage: VCEO = 120 V (max) • High DC current gain: hFE = 200~700 • Excellent hFE linearity: hFE (IC = 0.1 mA)/hFE (IC = 2 mA) = 0.95 (typ.)

2SC2459

Contextual Info: 2SC2459 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT process 2SC2459 Audio Amplifier Applications Unit: mm • High breakdown voltage: VCEO = 120 V (max) • High DC current gain: hFE = 200~700 • Excellent hFE linearity: hFE (IC = 0.1 mA)/hFE (IC = 2 mA) = 0.95 (typ.)

2SC2459

Abstract: transistor 2sc2459 2SA1049
Contextual Info: 2SC2459 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT process 2SC2459 Audio Amplifier Applications Unit: mm • High breakdown voltage: VCEO = 120 V (max) · High DC current gain: hFE = 200~700 · Excellent hFE linearity: hFE (IC = 0.1 mA)/hFE (IC = 2 mA) = 0.95 (typ.)

TPT5609

Abstract: SS8550 sot-23 Y2 sot-23 npn marking code cr SS8050 sot-89 Y1 6B sot 363 2N3904 SOT-23 MARKING CODE S9018 j6 sot-23 Marking 2TY SOT 363 marking CODE 2H MJE13003 2A
Contextual Info: MCC TM Micro Commercial Components SMALL SIGNAL &POWER TRANSISTORS VCEO Part No hFE @ VCE & IC IC Polarity VCE sat & VBE(sat) @ IC & IB fT @ VCE & IC VCE IC VCE(sat) VBE(sat) IC IB fT Min. fT Max. VCE IC hFE hFE Max. (V) (mA) Max.(V) Max.(V) (mA) (mA) (MHz)

KTA2014V

Abstract: KTC4075V
Contextual Info: SEMICONDUCTOR KTC4075V TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. E FEATURES B ᴌExcellent hFE Linearity : hFE 0.1mA /hFE(2mA)=0.95(Typ.). G A 1 H ᴌLow Noise : NF=1dB(Typ.), 10dB(Max.). D 2 ᴌHigh hFE : hFE=70~700.

KTA2014V

Abstract: KTC4075V
Contextual Info: SEMICONDUCTOR KTC4075V TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. E FEATURES B ᴌExcellent hFE Linearity : hFE 0.1mA /hFE(2mA)=0.95(Typ.). G A 1 H ᴌLow Noise : NF=1dB(Typ.), 10dB(Max.). D 2 ᴌHigh hFE : hFE=70~700.

KTA2014V

Abstract: KTC4075V
Contextual Info: SEMICONDUCTOR KTC4075V TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. E FEATURES B ・Excellent hFE Linearity : hFE 0.1mA /hFE(2mA)=0.95(Typ.). G A 1 H ・Low Noise : NF=1dB(Typ.), 10dB(Max.). D 2 ・High hFE : hFE=70~700.

KTA1504S

Abstract: KTC3875S
Contextual Info: SEMICONDUCTOR KTC3875S TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. FEATURES E B L L ᴌExcellent hFE Linearity ᴌHigh hFE : hFE=70ᴕ700. 3 G A 2 D : hFE 0.1mA /hFE(2mA)=0.95(Typ.). H ᴌLow Noise : NF=1dB(Typ.), 10dB(Max.).

KTA1504S

Abstract: KTC3875S
Contextual Info: SEMICONDUCTOR KTC3875S TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. FEATURES E B L L Excellent hFE Linearity 2 A 700. 3 G High hFE : hFE=70 D : hFE 0.1mA /hFE(2mA)=0.95(Typ.). H Low Noise : NF=1dB(Typ.), 10dB(Max.).

BF689

Abstract: 2N5651 BF272 2N5652 BF251 BFY82 BFY70 BF316 BF479 BFX36
Contextual Info: STI Type: BF200 Notes: Polarity: NPN Power Dissipation: .15 Tj: 200 VCBO: 30 VCEO: 20 hFE min: 15 hFE max: hFE A: 3.0 VCE: VCE A: hfe: fT: 550 Case Style: TO-206AF/TO-72: Industry Type: BF200 STI Type: BF183 Notes: Polarity: NPN Power Dissipation: .15 Tj: 200

SOT23

Abstract: SOT323 BCX70G SOT23 BCF33 956 sot23 BCF30 sot23 bcf81 transistor 1061 BC850C SOT-23
Contextual Info: Philips Semiconductors Small-signal Transistors TYPE NUMBER PACKAGE Selection guide VCEO max. V IC max. (mA) Ptot max. (mW) hFE min. hFE max. fT min. (MHz) PNP COMPL. PAGE BC850C SOT23 45 100 250 420 800 100 BC860C 324 BC850CW SOT323 45 100 200 420 800 100

STB205L

Contextual Info: STB205L PNP Silicon Transistor PIN Connection Descriptions • Suitable for low voltage large current drivers • Excellent hFE Linearity. • Switching Application Features • High hFE : hFE=200~400 • Low collector saturation voltage. : VCE sat =-0.5V(MAX.)

2n2222 to-92

Abstract: 2N2222A TO-92 2N2907A TO-92 2N2222A TO-18 transistor 2n2222a data sheet to-92 transistors 458 Transistor BCY58 2N2222 pnp 2n3904 TO-92 2N3904 TO-92 type
Contextual Info: Philips Semiconductors Small-signal Transistors Selection guide LEADED DEVICES continued NPN LOW-POWER SWITCHING TRANSISTORS TYPE NUMBER PACKAGE VCEO max. (V) IC max. (mA) Ptot max. (mW) hFE min. hFE max. fT min. (MHz) toff max. (ns) PNP COMPL. PAGE 2N2222

BC879 equivalent

Abstract: BSS51 equivalent Bc880 BSR52 BC875 BC876 BC879 BSR51 bsr60 BSR61
Contextual Info: Philips Semiconductors Small-signal Transistors Selection guide LEADED DEVICES continued NPN MEDIUM-POWER DARLINGTON TRANSISTORS TYPE NUMBER PACKAGE VCES max. (V) IC max. (mA) Ptot max. (mW) hFE min. hFE max. fT min. (MHz) toff max. (ns) PNP COMPL. PAGE

HN4G01J

Abstract: RN1103F
Contextual Info: HN4G01J TOSHIBA Multi Chip Discrece Device HN4G01J Unit: mm Audio Frequency General Purpose Amplifier Applications Q1 Small package Dual type High voltage and high current : VCEO = 50V, IC = 150mA (max) High hFE : hFE = 120~400 Excellent hFE linearity : hFE (IC = 0.1mA) / hFE (IC = 2mA) = 0.95 (typ.)

BC517

Abstract: BC516 MPSA14 MPSA25 npn darlington TO92 transistor BC516 mps-a14 BC516 equivalent BC617 BC517 data sheet
Contextual Info: Philips Semiconductors Small-signal Transistors Selection guide LEADED DEVICES continued NPN LOW-POWER DARLINGTON TRANSISTORS TYPE NUMBER PACKAGE VCES max. (V) IC max. (mA) Ptot max. (mW) hFE min. hFE max. fT min. (MHz) toff max. (ns) 125 – PNP COMPL.