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    HFE MAX 200 Search Results

    HFE MAX 200 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    LM6161J
    Rochester Electronics LLC LM6161 - Operational Amplifier, 1 Func, 7000uV Offset-Max, BIPolar, CDIP8 PDF Buy
    ICL7662MTV/B
    Rochester Electronics LLC ICL7662 - Switched Capacitor Converter, 10kHz Switching Freq-Max, CMOS PDF Buy
    ICL7660SMTV
    Rochester Electronics LLC ICL7660 - Switched Capacitor Converter, 0.02A, 17.5kHz Switching Freq-Max, CMOS, MBCY8 PDF Buy
    LM710CH
    Rochester Electronics LLC LM710 - Comparator, 1 Func, 5000uV Offset-Max, 40ns Response Time, BIPolar, MBCY8 PDF Buy
    LM1578AH/883
    Rochester Electronics LLC LM1578 - Switching Regulator, Current-mode, 0.75A, 100kHz Switching Freq-Max, MBCY8 - Dual marked (5962-8958602GA) PDF Buy

    HFE MAX 200 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    smd marking ly

    Abstract: hFE CLASSIFICATION Marking 2SC4116 marking LG -sot23 -led SMD LY smd ic marking LY
    Contextual Info: Transistors IC SMD Type Silicon NPN Epitaxial 2SC4116 Features High voltage and high current: VCEO = 50 V, IC = 150 mA max . Excellent hFE linearity: hFE (IC = 0.1 mA)/hFE (IC = 2 mA) = 0.95 (typ). High hFE: hFE = 70 700. Low noise: NF = 1dB (typ.), 10dB (max).


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    2SC4116 100mA, smd marking ly hFE CLASSIFICATION Marking 2SC4116 marking LG -sot23 -led SMD LY smd ic marking LY PDF

    KTC3875S

    Contextual Info: SEMICONDUCTOR KTC3875S TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. FEATURES ・Excellent hFE Linearity : hFE 0.1mA /hFE(2mA)=0.95(Typ.). ・High hFE : hFE=70~700. ・Low Noise : NF=1dB(Typ.), 10dB(Max.).


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    KTA1504S. KTC3875S 100mA, KTC3875S PDF

    2SA1049

    Abstract: 2SC2459 transistor 2sc2459
    Contextual Info: 2SC2459 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT process 2SC2459 Audio Amplifier Applications Unit: mm • High breakdown voltage: VCEO = 120 V (max) • High DC current gain: hFE = 200~700 • Excellent hFE linearity: hFE (IC = 0.1 mA)/hFE (IC = 2 mA) = 0.95 (typ.)


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    2SC2459 2SA1049. 2SA1049 2SC2459 transistor 2sc2459 PDF

    BC517

    Abstract: BC516 MPSA14 MPSA25 npn darlington TO92 transistor BC516 mps-a14 BC516 equivalent BC617 BC517 data sheet
    Contextual Info: Philips Semiconductors Small-signal Transistors Selection guide LEADED DEVICES continued NPN LOW-POWER DARLINGTON TRANSISTORS TYPE NUMBER PACKAGE VCES max. (V) IC max. (mA) Ptot max. (mW) hFE min. hFE max. fT min. (MHz) toff max. (ns) 125 – PNP COMPL.


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    2N6427 BC517 BC516 BC617 BC618 MPSA13 MPSA63 MPSA14 MPSA64 MPSA25 BC517 BC516 MPSA14 MPSA25 npn darlington TO92 transistor BC516 mps-a14 BC516 equivalent BC617 BC517 data sheet PDF

    bc548 TO-92

    Abstract: ED1502C BC549 BC549 TO-92 jc33725 bc558c JC337 TO92 ED1502E transistor BC559
    Contextual Info: Philips Semiconductors Small-signal Transistors TYPE NUMBER PACKAGE Selection guide VCEO max. V IC max. (mA) Ptot max. (mW) hFE min. hFE max. fT min. (MHz) PNP COMPL. PAGE BC547A TO-92 45 100 500 110 220 100 BC557A 261 BC547B TO-92 45 100 500 200 450 100


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    BC547A BC557A BC547B BC557B BC547C BC557C BC548 BC558 BC548A BC558A bc548 TO-92 ED1502C BC549 BC549 TO-92 jc33725 bc558c JC337 TO92 ED1502E transistor BC559 PDF

    Contextual Info: UTC 2SC2712 NPN EPITAXIAL PLANAR TRANSISTOR AUDIO FREQUENCY AMPLIFIER NPN TRANSISTOR FEATURES 3 *High Voltage and High Current :VCEO=50V,IC=150mA Max. *Excellent hFE Linearity :hFE(IC=0.1mA)/hFE(IC=2mA)=0.95(Typ.) *High hFE:hFE=70~700 *Low Noise:NF=1dB(Typ.),10dB(MaX.)


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    2SC2712 150mA 2SA1162 OT-23 100mA QW-R206-029 PDF

    2sc2712

    Abstract: C 029 Transistor
    Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 2SC2712 NPN SILICON TRANSISTOR AUDIO FREQUENCY AMPLIFIER NPN TRANSISTOR „ 3 FEATURES 1 2 * High Voltage and High Current : VCEO=50V, IC=150mA Max. * Excellent hFE Linearity : hFE(IC=0.1mA)/hFE(IC=2mA)=0.95(Typ.) * High hFE


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    2SC2712 150mA OT-23 OT-323 2SC2712L 2SC2712G 2SC2712L-x-AE3-R 2SC2712G-x-AE3-R 2SC2712L-x-AL3-R 2SC2712G-x-AL3-R 2sc2712 C 029 Transistor PDF

    Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 2SC2712 NPN SILICON TRANSISTOR AUDIO FREQUENCY AMPLIFIER NPN TRANSISTOR  FEATURES * High Voltage and High Current: VCEO=50V, IC=150mA Max. * Excellent hFE Linearity: hFE(IC=0.1mA)/hFE(IC=2mA)=0.95(Typ.) * High hFE * Low Noise


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    2SC2712 150mA 2SC2712L-x-AE3-R 2SC2712G-x-AE3-R 2SC2712L-x-AL3-R 2SC2712G-x-AL3-R 2SC2712L-x-T92-R 2SC2712G-x-T92-R OT-23 OT-323 PDF

    2N2219 transistor

    Abstract: IC 744 BSW68A BDX36 2N2219 2N2219A BFX34 BFX85 BSW66A BSW67A
    Contextual Info: Philips Semiconductors Small-signal Transistors Selection guide LEADED DEVICES continued NPN MEDIUM-POWER SWITCHING TRANSISTORS TYPE NUMBER 2N2219 PACKAGE TO-39 VCEO max. (V) IC max. (mA) Ptot max. (mW) hFE min. hFE max. fT min. (MHz) toff max. (ns) 30 800


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    2N2219 2N2219A BFX85 BSW66A BSW67A BSW68A BSX32 BSX59 BSX61 2N4036 2N2219 transistor IC 744 BSW68A BDX36 2N2219 2N2219A BFX34 BFX85 BSW66A BSW67A PDF

    ic 556

    Abstract: IC 556 DATASHEET BF494 bf199 BF494 Bf240 bf494 equivalent BF370R BF370 BDX45 bf495B
    Contextual Info: Philips Semiconductors Small-signal Transistors Selection guide LEADED DEVICES continued NPN POWER DARLINGTON TRANSISTORS TYPE NUMBER PACKAGE VCES max. (V) IC max. (mA) Ptot max. (mW) hFE min. hFE max. fT min. (MHz) toff max. (ns) PNP COMPL. PAGE BDX42 TO-126


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    BDX42 O-126 BDX45 BDX43 BDX44 BDX47 BF370R BF494 ic 556 IC 556 DATASHEET BF494 bf199 BF494 Bf240 bf494 equivalent BF370R BF370 BDX45 bf495B PDF

    2sc4738ft

    Abstract: 2SA1832FT
    Contextual Info: 2SC4738FT TOSHIBA Transistor Silicon NPN Epitaxial Type PCT process 2SC4738FT Audio Frequency General Purpose Amplifier Applications • High Voltage: VCEO = 50 V • High Current: IC = 150 mA (max) • High hFE: hFE = 120 to 400 • Excellent hFE Linearity: hFE (IC = 0.1 mA)/hFE (IC = 2 mA) = 0.95 (typ.)


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    2SC4738FT 2SA1832FT 2sc4738ft 2SA1832FT PDF

    2sc4738ft

    Abstract: 2SA1832FT IC5010
    Contextual Info: 2SC4738FT TOSHIBA Transistor Silicon NPN Epitaxial Type PCT process 2SC4738FT Audio Frequency General Purpose Amplifier Applications • High Voltage: VCEO = 50 V • High Current: IC = 150 mA (max) • High hFE: hFE = 120 to 400 • Excellent hFE Linearity: hFE (IC = 0.1 mA)/hFE (IC = 2 mA) = 0.95 (typ.)


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    2SC4738FT 2SA1832FT 2sc4738ft 2SA1832FT IC5010 PDF

    missile guidance ic

    Abstract: 2SA2154 2SC6026
    Contextual Info: 2SC6026 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT Process 2SC6026 General-Purpose Amplifier Applications • Excellent hFE linearity : hFE (IC = 0.1 mA)/hFE (IC = 2 mA) = 0.95 (typ.) : VCEO = 50 V, IC = 100 mA (max) • High hFE • Complementary to 2SA2154


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    2SC6026 2SA2154 missile guidance ic 2SA2154 2SC6026 PDF

    NPN POWER DARLINGTON TRANSISTORS

    Abstract: small signal transistors
    Contextual Info: 2N6283 Silicon Transistors - NPN/PNP Small Signal Transistors Page 1 of 1 Silicon Transistors - NPN/PNP Small Signal Transistors Contact Factory for complete specification. STI Type 2N6283 Tj 200 hFE max 18K hfe 1000 Industry Type 2N6283 Notes VCBO 80 hFE A


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    2N6283 2N6283 O-204AA/TO-3 07-Sep-2010 NPN POWER DARLINGTON TRANSISTORS small signal transistors PDF

    small signal transistors

    Contextual Info: 2N4037 Silicon Transistors - NPN/PNP Small Signal Transistors Page 1 of 1 Silicon Transistors - NPN/PNP Small Signal Transistors Contact Factory for complete specification. STI Type 2N4037 Tj 200 hFE max 250 hfe 3.0 Industry Type 2N4037 Notes VCBO 60 hFE A


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    2N4037 2N4037 O-205AD/TO-39 07-Sep-2010 small signal transistors PDF

    2N5401

    Abstract: BF420L mpsa92 MPSA92 datasheet PN3439 PN3440 2N5400 2N5550 2N5551 BF422L
    Contextual Info: Philips Semiconductors Small-signal Transistors Selection guide LEADED DEVICES continued NPN HIGH-VOLTAGE LOW-POWER TRANSISTORS TYPE NUMBER PACKAGE VCEO max. (V) IC max. (mA) Ptot max. (mW) hFE min. hFE max. fT min. (MHz) PNP COMPL. 2N5400 PAGE 2N5550 TO-92


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    2N5400 2N5550 2N5551 2N5401 BF420L BF421L BF422L BF423L MPSA42 MPSA92 2N5401 BF420L mpsa92 MPSA92 datasheet PN3439 PN3440 2N5400 2N5550 2N5551 BF422L PDF

    BFV421

    Abstract: BFV420 2N5415 "Small-signal Transistors Selection" BF487 2N5416 BF420 BF421 BF422 BF423
    Contextual Info: Philips Semiconductors Small-signal Transistors Selection guide LEADED DEVICES continued NPN HIGH-VOLTAGE MEDIUM-POWER TRANSISTORS TYPE NUMBER PACKAGE VCEO max. (V) IC max. (mA) Ptot max. (mW) hFE min. hFE max. fT min. (MHz) PNP COMPL. PAGE BF420 TO-92 300


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    BF420 BF421 BF422 BF423 BF483 BF485 BF487 BFV420 BFV421; 2N5415 BFV421 BFV420 2N5415 "Small-signal Transistors Selection" BF487 2N5416 BF420 BF421 BF422 BF423 PDF

    16w SOT23

    Abstract: sc-59 SOT23 NPN SOT323 2PD601A 2PC4081R 2PC4081 2PC4081Q 2PC4081S 2PC4617
    Contextual Info: Philips Semiconductors Small-signal Transistors Selection guide SURFACE-MOUNT DEVICES NPN GENERAL PURPOSE LOW-POWER TRANSISTORS TYPE NUMBER PACKAGE VCEO max. V IC max. (mA) Ptot max. (mW) hFE min. hFE max. fT min. (MHz) PNP COMPL. PAGE 2PC4081 SC-70 40 100


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    2PC4081 SC-70 2PA1576 2PC4081Q 2PA1576Q 2PC4081R 2PA1576R 2PC4081S 16w SOT23 sc-59 SOT23 NPN SOT323 2PD601A 2PC4081R 2PC4081 2PC4081Q 2PC4081S 2PC4617 PDF

    2SA1832FT

    Abstract: 2SC4738F
    Contextual Info: 2SA1832FT TOSHIBA Transistor Silicon PNP Epitaxial Type PCT process 2SA1832FT Audio frequency General Purpose Amplifier Applications • High voltage: VCEO = −50 V • High current: IC = −150 mA (max) • High hFE: hFE = 120 to 400 • Excellent hFE linearity: hFE (IC = −0.1 mA)/


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    2SA1832FT 2SC4738F 2SA1832FT 2SC4738F PDF

    40250

    Abstract: small signal transistors
    Contextual Info: 40250 Silicon Transistors - NPN/PNP Small Signal Transistors Page 1 of 1 Silicon Transistors - NPN/PNP Small Signal Transistors Contact Factory for complete specification. STI Type 40250 Tj 200 hFE max 100 hfe Notes VCBO 50 hFE A 1.5m fT 1.0 Polarity NPN VCEO


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    O-213AA/TO-66 07-Sep-2010 40250 small signal transistors PDF

    to126

    Abstract: TO-126 BD825-10 BD826-10 BD137-10 BD825 bd138-16 BD826 BD136 BD139-16
    Contextual Info: Philips Semiconductors Small-signal Transistors Selection guide LEADED DEVICES continued NPN GENERAL PURPOSE POWER TRANSISTORS VCEO max. (V) IC max. (mA) Ptot max. (mW) hFE min. hFE max. fT min. (MHz) TO-126 45 3000 15000 40 >40 60 BD135 TO-126 45 1500 8000


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    O-126 BD135 BD135-10 BD135-16 BD137 BD137-10 to126 TO-126 BD825-10 BD826-10 BD137-10 BD825 bd138-16 BD826 BD136 BD139-16 PDF

    FHT3875

    Contextual Info: ᄰ፿ྯ૵਌ General Purpose Transistors FHT3875 General Purpose Transistors ᄰ፿ྯ૵਌ DESCRIPTION & FEATURES 概述及特點 SOT-23 Excellent hFE Linearity hFE 線性特性極好 hFE 0.1mA / hFE(2mA)=0.95(Typ.) High高 hFE:hFE=70~700 Low Noise低雜訊:NF=1dB (Typ.),10dB(Max.)


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    FHT3875 OT-23 FHT1504 FH1504 100mA FHT3875 PDF

    2SA1873

    Abstract: 2SC4944
    Contextual Info: 2SA1873 TOSHIBA Transistor Silicon PNP Epitaxial Type PCT process 2SA1873 Audio Frequency General Purpose Amplifier Applications • Small package (dual type) • High voltage and high current: VCEO = −50 V, IC = −150 mA (max) • High hFE • Excellent hFE linearity: hFE (IC = −0.1 mA)/hFE (IC = −2 mA)


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    2SA1873 2SC4944 2SA1873 2SC4944 PDF

    BC847 SOT23

    Abstract: BC856BT SOT23 SOT323 SOT-323 BC850 SOT23 BC856BW BC846ASOT-23 BC856B SOT23 SOT23 BC846A
    Contextual Info: Philips Semiconductors Small-signal Transistors TYPE NUMBER PACKAGE Selection guide VCEO max. V IC max. (mA) Ptot max. (mW) hFE min. hFE max. fT min. (MHz) 65 100 250 110 450 100 BC856 305 PNP COMPL. PAGE BC846 SOT23 BC846A SOT23 65 100 250 110 220 100 BC856A


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    BC856 BC846 BC846A BC856A BC846AT SC-75 BC856AT BC846AW OT323 BC856AW BC847 SOT23 BC856BT SOT23 SOT323 SOT-323 BC850 SOT23 BC856BW BC846ASOT-23 BC856B SOT23 SOT23 BC846A PDF