HBS3131 Search Results

smd code HF transistor

Abstract: transistor SMD MARKING CODE HF marking code CIE SMD Transistor transistor smd marking hf SMD HF transistor smd code marking rf ft sot23 SMD Transistor 7e K TRANSISTOR SMD MARKING CODE 596 m 147 smd transistor SMD TRANSISTOR MARKING 76
Contextual Info: • hbS3131 0DE47Qfl 14fl ■ N AMER P H I L I P S / D I S C R E T E APX BF824 fc.7E D J V_ H.F. SILICON PLANAR EPITAXIAL T RA N SIST O R P-N-P transistor in a plastic SO T-23 envelope especially intended for r.f. stages in f.m. front-ends in common base configuration for S M D applications.

Contextual Info: • bh53131 005CH15 h M N ANER PHILIPS/DISCRETE CNX35 CNX36 CNX39 S5E D T - 4 1 -0 3 OPTOCOUPLERS Optically coupled isolators consisting of an infrared emitting GaAs diode and a silicon npn photo transistor with accessible base. Plastic envelopes. Suitable for TTL integrated circuits.

BUZ84A

Contextual Info: PowerMOS transistor_ BUZ84A_ | N AUER PHILIPS/DISCRETE ObE D • bbSBTBl 0 0 m 7 0 3 5 ■ July 1987 GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a metai envelope. This device is intended for use in

bd239a ti

Contextual Info: 11 N AMER PHILIPS/DISCRETE . bL>53T31 0011363 5 • 2SE D BD239; BD239A BD239B; BD239C SILICON EPITAXIAL BASE POWER TRANSISTORS N-P-N silicon transistors in a plastic envelope intended fo r use in audio output stages, general amplifier and high-speed switching applications.P-N-P complements are BD240; 240A; 240B and BD240C.

iran

Abstract: BUK455-450B T0220AB taig
Contextual Info: N AMER PHILIPS/DISCRETE ESE D • bbS3T31 0050505 =1 ■ PowerMOS transistor BUK455-450B T-3T-/3 GENERAL DESCRIPTION QUICK REFERENCE DATA N-channel enhancement mode field-effect power transistor in a plastic envelope. The device is intended for use in Switched Mode Power Supplies

BYP22

Abstract: step recovery diode BYP22-50 diode t03 J-703 Av
Contextual Info: N AMER PHILIPS/DISCRETE 2SE » • J 1*1.53131 0GS237S T ■ BYP22 SERIES 7 ^ 0 3 -/9 ULTRA FAST-RECOVERY DOUBLE RECTIFIER DIODES FEATURING LOW REVERSE LEAKAGE Glass-passivated, high-efficiency epitaxial rectifier diodes in plastic envelopes, featuring lo w reverse

BDT62B

Contextual Info: BDT62; 62A BDT62B; 62C _ J K . SILICON DARLINGTON POWER TRANSISTORS P-N-P epitaxial base transistors in m onolithic Darlington circu it for audio output stages and general am plifier and switching applications. TO-220 plastic envelope. N-P-N complements are BDT63,