HARDNESS TESTER Search Results

CQFj 44

Abstract: CQFJ 68 lead CQFJ
Contextual Info: WS128K32-25G2SMX 128Kx32 Radiation Hardened SRAM MODULE ADVANCED* FEATURES • Access Time of 25ns ■ Radiation Tolerant • Total Dose Hardness through 1x106 rad SiO2 ■ Neutron Hardness through 1x1014 cm-2 ■ Dynamic and Static Transient Upset Hardness through

203A665

Abstract: J122 SMD TRANSISTOR 314 j122
Contextual Info: 203A665 128K x 8 Radiation Hardened Static RAM – 3.3 V Product Description Features Radiation • Fabricated with Bulk CMOS 0.5 µm Process • Total Dose Hardness through 1x106 rad Si • Neutron Hardness through 1x1014 N/cm2 • Dynamic and Static Transient Upset Hardness

Contextual Info: 203A665 128K x 8 Radiation Hardened Static RAM – 3.3 V Product Description Features Radiation • Fabricated with Bulk CMOS 0.5 µm Process • Total Dose Hardness through 1x106 rad Si • Neutron Hardness through 1x1014 N/cm2 • Dynamic and Static Transient Upset Hardness

A1760

Abstract: 86-65-3 AEFJANTXV1N4100-1-BAE/TR/BAE
Contextual Info: 128K x 32 Radiation Hardened Static RAM MCM– 3.3V 238A792 Product Description Features Radiation • Fabricated with Bulk CMOS 0.5 µm Process • Total Dose Hardness through 1x106 rad Si • Neutron Hardness through 1x1014 N/cm2 • Dynamic and Static Transient Upset Hardness

BAE Systems

Abstract: AEFJANTXV1N4100-1-BAE/TR/BAE 209A542 transistor B885 LM136A-2.5QML
Contextual Info: 128K x 16 Radiation Hardened Static RAM MCM – 3.3 V 209A542 Product Description Features Radiation • Fabricated with Bulk CMOS 0.5 µm Process • Total Dose Hardness through 1x106 rad Si • Neutron Hardness through 1x1014 N/cm2 • Dynamic and Static Transient Upset Hardness

transistor B885

Abstract: 201A072 225A837 B885
Contextual Info: 201A072 225A837 256K x 8 Radiation Hardened Static RAM MCM – 5 V Product Description Features Radiation • Fabricated with Bulk CMOS 0.5 µm Process • Total Dose Hardness through 1x106 rad Si • Neutron Hardness through 1x1014 N/cm2 • Dynamic and Static Transient Upset Hardness

S4 46

Abstract: AEFJANTXV1N4100-1-BAE/TR/BAE 225A833
Contextual Info: 128K x 32 Radiation Hardened Static RAM MCM– 5 V 225A833 Product Description Features Radiation • Fabricated with Bulk CMOS 0.5 µm Process • Total Dose Hardness through 1x106 rad Si • Neutron Hardness through 1x1014 N/cm2 • Dynamic and Static Transient Upset Hardness

transistor m285

Abstract: transistor C013 SMD A137 transistor k450 cm c013 transistor f630
Contextual Info: 167A690 182A934 32K x 8 Radiation Hardened Static RAM – 5 V Product Description Features Radiation • Fabricated with Bulk CMOS 0.8 µm Process • Total Dose Hardness through 1x106 rad Si • Neutron Hardness through 1x1014 N/cm2 • Dynamic and Static Transient Upset Hardness

transistor B885

Abstract: 209A542 AEFJANTXV1N4100-1-BAE/TR/BAE LM136A-2.5QML
Contextual Info: 128K x 16 Radiation Hardened Static RAM MCM – 3.3 V 209A542 Product Description Features Radiation • Fabricated with Bulk CMOS 0.5 µm Process • Total Dose Hardness through 1x106 rad Si • Neutron Hardness through 1x1014 N/cm2 • Dynamic and Static Transient Upset Hardness

238A792

Contextual Info: 128K x 32 Radiation Hardened Static RAM MCM– 3.3V 238A792 Product Description Features Radiation • Fabricated with Bulk CMOS 0.5 µm Process • Total Dose Hardness through 1x106 rad Si • Neutron Hardness through 1x1014 N/cm2 • Dynamic and Static Transient Upset Hardness

198A854

Abstract: BAE Systems DQ72
Contextual Info: 128K x 72 x 2 Radiation Hardened Static RAM MCM– 3.3 V 198A854 Product Description Features Radiation • Fabricated with Bulk CMOS 0.5 µm Process • Total Dose Hardness through 1x106 rad Si • Neutron Hardness through 1x1014 N/cm2 • Dynamic and Static Transient Upset Hardness

a3050

Abstract: 86-65-3 D0950
Contextual Info: 128K x 72 x 2 Radiation Hardened Static RAM MCM– 3.3 V 198A854 Product Description Features Radiation • Fabricated with Bulk CMOS 0.5 µm Process • Total Dose Hardness through 1x106 rad Si • Neutron Hardness through 1x1014 N/cm2 • Dynamic and Static Transient Upset Hardness

transistor m285

Abstract: 167A690 transistor C013 transistor k450 transistor f630 182A934 cm c013 D650
Contextual Info: 167A690 182A934 32K x 8 Radiation Hardened Static RAM – 5 V Product Description Features Radiation • Fabricated with Bulk CMOS 0.8 µm Process • Total Dose Hardness through 1x106 rad Si • Neutron Hardness through 1x1014 N/cm2 • Dynamic and Static Transient Upset Hardness

190A325

Abstract: C710 D 5962h96877
Contextual Info: 190A325 198A592 128K x 8 Radiation Hardened Static RAM – 5 V Product Description Features Radiation • Fabricated with Bulk CMOS 0.5 µm Process • Total Dose Hardness through 1x106 rad Si • Neutron Hardness through 1x1014 N/cm2 • Dynamic and Static Transient Upset Hardness

HXNV01600

Contextual Info: HXNV01600 16 Megabit Non-Volatile Magneto-Resistive RAM Features • ■ ■ PRODUCTION - Release Review - -17 28Jun Jun2014 201414:05:31 03:55:11MST MST- -Printed Printedon on26 18Jun Jul 2014 ■ ■ ■ ■ ■ Total Dose Hardness 1x106 rad Si Dose Rate Upset Hardness

HXNV01600

Contextual Info: HXNV01600 16 Megabit Non-Volatile Magneto-Resistive RAM Features • ■ ■ ■ ■ ■ ■ ■ Total Dose Hardness 1x106 rad Si Dose Rate Upset Hardness 1x1010 rad(Si)/s Dose Rate Survivability 1x1012 rad(Si)/s Soft Error Rate ≤ 1x10-10 upsets/bit-day

RAD HARD TRENCH TRANSISTOR

Contextual Info: Honeywell 64K X 1 RADIATION-HARDENED STATIC RAM - SOI HX6464 FEATURES RADIATION • Fabricated with R IC M O S1“ Silicon on Insulator SOI 1.2 (im process • Total Dose Hardness through 1x10 e rad (S i0 2) • Neutron Hardness through 1x1014 cm 2 OTHER

197A807

Abstract: BAE Systems prom 32K x 8 fuse smd code N WY smd transistor BAE Systems b050 TRANSISTOR PACKAGE T 4-LEAD SMD TOP VIEW VDD 1. GND 2 smd atmel AT28C256 rad smd transistor a4
Contextual Info: 32K x 8 Radiation Hardened Programmable Read Only Memory PROM – 5 V 197A807 Product Description Features Radiation • Fabricated with Bulk CMOS 0.8 µm Process • Total Dose Hardness through 2x105 rad(Si) • Neutron Hardness through 1x1012 N/cm2 • SEU Immune (No Latches)

prom 238A790

Abstract: 238A790 BAE Systems prom 32K x 8 AEFJANTXV1N4100-1-BAE/TR/BAE ppi interface 1007 S/Stag Programmer Orbit AS9000 unisite 28C256 BAE Systems
Contextual Info: 32K x 8 Radiation Hardened Programmable Read Only Memory PROM – 3.3V 238A790 Product Description Features Radiation • Fabricated with Bulk CMOS 0.8 µm Process • Total Dose Hardness through 2x105 rad(Si) • Neutron Hardness through 1x1012 N/cm2 • SEU Immune (No Latches)

prom 238A790

Abstract: AT28C256 rad WY smd transistor 238A790 BAE Systems prom 32K x 8 VT101 Atmel PART DATE CODE K109 AEFJANTXV1N4100-1-BAE/TR/BAE
Contextual Info: 238A790 32K x 8 Read Only Memory PROM – 3.3V Product Description Features Radiation • Fabricated with Bulk CMOS 0.8 µm Process • Total Dose Hardness through 2x105 rad(Si) • Neutron Hardness through 1x1012 N/cm2 • SEU Immune (No Latches) • Latchup Free

HX84050

Contextual Info: Military & Space Products 5 MEGABIT MEMORY MODULE HX84050 RADIATION OTHER • Fabricated with RICMOS IV Silicon on Insulator SOI 0.75 µm Process (Leff = 0.6 µm) • Listed on SMD #5962-96840 6 • Total Dose Hardness through 1x10 rad (SiO2) • Neutron Hardness through 1x1014 cm-2

Contextual Info: Honeywell 32K X 8 RADIATION-HARDENED STATIC RAM HC6856 FEATURES RADIATION • Fabricated with RICMOS'“ IV Bulk 0.8 urn Process • Total Dose Hardness through 1x10e rad Si02 • Neutron Hardness through 1x1014 cnrr2 OTHER • Read/Write Cycle Times s 40 ns (-55 to 125°C)

4031

Abstract: OP27RP
Contextual Info: Preliminary SEi - Radiation Hardened OP27RP Low Noise, Precision Operational Amplifier Features: • RAD-PAK technology hardened against natural space radiation • Total dose hardness typ 100 krad Si ; dependent upon orbit • Package: -8 pin RAD-PAK flat pack

212A625

Contextual Info: 212A625 512K x 8 Radiation Hardened Static RAM – 3.3 V Product Description Features Radiation • Fabricated with RHCMOS5XL 0.35 µm Process for Strategic rad hard or R25 0.25 µm Commercial process for rad hard • Radiation Hardened Total Dose hardness through