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    198A854 Search Results

    198A854 Datasheets (1)

    BAE Systems
    Part ECAD Model Manufacturer Description Datasheet Type PDF PDF Size Page count
    198A854
    BAE Systems 128K x 72 x 2 Radiation Hardened Static RAM MCM - 3.3 V Original PDF 476.02KB 12

    198A854 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    198A854

    Abstract: BAE Systems DQ72
    Contextual Info: 128K x 72 x 2 Radiation Hardened Static RAM MCM– 3.3 V 198A854 Product Description Features Radiation • Fabricated with Bulk CMOS 0.5 µm Process • Total Dose Hardness through 1x106 rad Si • Neutron Hardness through 1x1014 N/cm2 • Dynamic and Static Transient Upset Hardness


    Original
    198a8541x1061x10141x109+61x10-111x1012308-leadas9000bae systemsdq72 PDF

    a3050

    Abstract: 86-65-3 D0950
    Contextual Info: 128K x 72 x 2 Radiation Hardened Static RAM MCM– 3.3 V 198A854 Product Description Features Radiation • Fabricated with Bulk CMOS 0.5 µm Process • Total Dose Hardness through 1x106 rad Si • Neutron Hardness through 1x1014 N/cm2 • Dynamic and Static Transient Upset Hardness


    Original
    198a854308-lead1x1061x1014+71x1091x10-111x1012as9000a305086-65-3d0950 PDF

    Contextual Info: 128K x 72 × 2 Radiation Hardened Static RAM MCM – 3.3 V 198A854 Product Description Features Radiation Other • Fabricated with Bulk CMOS 0.5 µm Process • Read/Write Cycle Times ≤50 ns, -30°C to 90°C • Total Dose Hardness through 1×106 rad(Si)


    Original
    198a854308-leadas9000pubs-01-b22-q-013+1mva01-012 PDF