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    238A790 Datasheets (1)

    BAE Systems
    Part ECAD Model Manufacturer Description Datasheet Type PDF PDF Size Page count
    238A790
    		BAE Systems Radiation Hardened Programmable Read Only Memory (PROM) - 3.3V Original PDF 283.63KB 12

    238A790 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    prom 238A790

    Abstract: 238A790 BAE Systems prom 32K x 8 AEFJANTXV1N4100-1-BAE/TR/BAE ppi interface 1007 S/Stag Programmer Orbit AS9000 unisite 28C256 BAE Systems
    Contextual Info: 32K x 8 Radiation Hardened Programmable Read Only Memory PROM – 3.3V 238A790 Product Description Features Radiation • Fabricated with Bulk CMOS 0.8 µm Process • Total Dose Hardness through 2x105 rad(Si) • Neutron Hardness through 1x1012 N/cm2 • SEU Immune (No Latches)


    Original     		238a7902x1051x101228-lead+1028c256at28c256as9000prom 238a790bae systems prom 32k x 8aefjantxv1n4100-1-bae/tr/baeppi interface 1007s/stag programmer orbitunisitebae systems PDF

    prom 238A790

    Abstract: AT28C256 rad WY smd transistor 238A790 BAE Systems prom 32K x 8 VT101 Atmel PART DATE CODE K109 AEFJANTXV1N4100-1-BAE/TR/BAE
    Contextual Info: 238A790 32K x 8 Read Only Memory PROM – 3.3V Product Description Features Radiation • Fabricated with Bulk CMOS 0.8 µm Process • Total Dose Hardness through 2x105 rad(Si) • Neutron Hardness through 1x1012 N/cm2 • SEU Immune (No Latches) • Latchup Free


    Original     		238a79028-lead2x1051x1012+1228c256at28c256as9000x5040prom 238a790at28c256 radwy smd transistorbae systems prom 32k x 8vt101atmel part date codek109aefjantxv1n4100-1-bae/tr/bae PDF